Xiaofan Chen, Wen-hua Chen, Qian Zhang, F. Ghannouchi, Zhenghe Feng
{"title":"A 200 watt broadband continuous-mode doherty power amplifier for base-station applications","authors":"Xiaofan Chen, Wen-hua Chen, Qian Zhang, F. Ghannouchi, Zhenghe Feng","doi":"10.1109/MWSYM.2017.8058790","DOIUrl":null,"url":null,"abstract":"This paper presents a high-power Continuous-mode Doherty Power Amplifier (C-DPA) for base-station applications. By utilizing de-embedded models of active devices and allowing the two transistors modulate each other at harmonic frequencies, the proposed C-DPA exhibits improved power, efficiency and bandwidth. Based on the proposed technique, a demonstrating 200 Watt C-DPA was designed over 1.7–2.7 GHz band. According to the measured results, over the 1 GHz bandwidth, the designed DPA generates 52.7–54.3 dBm power at saturation and exhibits 40%-50.2% drain efficiency at −6dB power back-off (BO). To the best of the authors' knowledge, this is the state-of-the-art performance of high-power broadband DPAs for base-station applications. Furthermore, using a 10MHz, 7.5dB PAPR LTE signal, the fabricated DPA was measured and linearized over the full-band, verifying its ability of being linearized.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":"90 4 1","pages":"1110-1113"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE MTT-S International Microwave Symposium (IMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2017.8058790","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16
Abstract
This paper presents a high-power Continuous-mode Doherty Power Amplifier (C-DPA) for base-station applications. By utilizing de-embedded models of active devices and allowing the two transistors modulate each other at harmonic frequencies, the proposed C-DPA exhibits improved power, efficiency and bandwidth. Based on the proposed technique, a demonstrating 200 Watt C-DPA was designed over 1.7–2.7 GHz band. According to the measured results, over the 1 GHz bandwidth, the designed DPA generates 52.7–54.3 dBm power at saturation and exhibits 40%-50.2% drain efficiency at −6dB power back-off (BO). To the best of the authors' knowledge, this is the state-of-the-art performance of high-power broadband DPAs for base-station applications. Furthermore, using a 10MHz, 7.5dB PAPR LTE signal, the fabricated DPA was measured and linearized over the full-band, verifying its ability of being linearized.