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2017 IEEE MTT-S International Microwave Symposium (IMS)最新文献

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Design of a position-independent end-to-end inductive WPT link for industrial dynamic systems 用于工业动态系统的位置无关的端到端感应WPT链路设计
2017 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2017-06-01 DOI: 10.1109/MWSYM.2017.8058774
Alex Pacini, A. Costanzo, S. Aldhaher, P. Mitcheson
{"title":"Design of a position-independent end-to-end inductive WPT link for industrial dynamic systems","authors":"Alex Pacini, A. Costanzo, S. Aldhaher, P. Mitcheson","doi":"10.1109/MWSYM.2017.8058774","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8058774","url":null,"abstract":"This paper will present the design of a position-independent inductive wireless power transfer (WPT) system for dynamic applications, where power is required to be delivered to a moving object on a path, such as industrial sliders and mass movers. A key feature of the designed inductive WPT system is to inherently maintain a constant dc output voltage, dc output power and dc-to-dc efficiency of the overall system, regardless of the vehicle's position. The system consists of an array of transmitting coils, where each coil is driven by a 6.78 MHz constant amplitude current generated from a load-independent Class EF inverter. The receiving coil is series tuned and is connected to a Class EF2 rectifier, which is numerically optimised to maintain a constant dc output, independently of the dc load. The system is powered from a 70V dc voltage source. GaN FET and SiC diodes are used to implement the Class EF inverter and rectifier. Results show a peak dc-dc efficiency of 83% at 150W with a 4% variation of the output voltage. The prototype of the complete link is under way.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":"13 1","pages":"1053-1056"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79741359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Multitene design for third order MIMO volterra kernels 三阶MIMO volterra核的多周期设计
2017 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2017-06-01 DOI: 10.1109/MWSYM.2017.8058925
Zain Ahmed Khan, E. Zenteno, P. Handel, M. Isaksson
{"title":"Multitene design for third order MIMO volterra kernels","authors":"Zain Ahmed Khan, E. Zenteno, P. Handel, M. Isaksson","doi":"10.1109/MWSYM.2017.8058925","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8058925","url":null,"abstract":"This paper proposes a technique for designing multitone signals that can separate the third order multiple input multiple output (MIMO) Volterra kernels. Multitone signals fed to a MIMO Volterra system yield a spectrum that is a permutation of the sums of the input signal tones. This a priori knowledge is used to design multitone signals such that the output from the MIMO Volterra kernels does not overlap in the frequency domain, hence making it possible to separate these kernels from the output of the MIMO Volterra system. The proposed technique is applied to a 2×2 RF MIMO transmitter to determine its dominant hardware impairments. For input crosstalk, the proposed method reveals the dominant self and cross kernels whereas for output crosstalk, the proposed method reveals that only the self kernels are dominant.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":"52 1","pages":"1553-1556"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84740413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Micrometrie displacement sensor based on chipless RFID 基于无芯片RFID的微米位移传感器
2017 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2017-06-01 DOI: 10.1109/MWSYM.2017.8058640
E. Perret
{"title":"Micrometrie displacement sensor based on chipless RFID","authors":"E. Perret","doi":"10.1109/MWSYM.2017.8058640","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8058640","url":null,"abstract":"In this paper a chipless RFID tag has been used to realized displacement measurements. Displacements of 100 μm can be monitored with this technique coming from chipless RFID. Tagged objects can thus be identified and their displacements can be monitored at the same time with accuracy of a few microns.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":"12 1","pages":"605-608"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88615807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
An S-band 3-W load-reconfigurable power amplifier with 50–76% efficiency for VSWR up to 4:1 s波段3w负载可重构功率放大器，效率50-76%，驻波比高达4:1
2017 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2017-06-01 DOI: 10.1109/MWSYM.2017.8059071
Yu-Chen Wu, M. A. Khater, A. Semnani, D. Peroulis
{"title":"An S-band 3-W load-reconfigurable power amplifier with 50–76% efficiency for VSWR up to 4:1","authors":"Yu-Chen Wu, M. A. Khater, A. Semnani, D. Peroulis","doi":"10.1109/MWSYM.2017.8059071","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8059071","url":null,"abstract":"A load-configurable high-efficiency power amplifier (PA), co-designed with a two-pole evanescent-mode (EVA) cavity-base impedance tuner, is demonstrated in this paper. A high-Q impedance tuner is used as the output matching network of the power amplifier to properly terminate the transistor various load impedances. The presented design is experimentally validated using GaN transistor and measured at 2.5 GHz. The quality factor of the impedance tuner is extracted from measurements and found to be approximately 300. The PA with the impedance tuner reaches 76% efficiency at VSWR = 1, 63–75% at VSWR = 2, and 50–62% at VSWR = 4. The maximum output power of the PA is 35 dBm (3.16 W).","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":"4 1","pages":"2041-2044"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88726423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Class-E amplifiers and applications at MF, HF, and VHF 中频，高频和甚高频的e类放大器和应用
2017 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2017-06-01 DOI: 10.1109/MWSYM.2017.8058853
A. Mediano, F. Ortega-González
{"title":"Class-E amplifiers and applications at MF, HF, and VHF","authors":"A. Mediano, F. Ortega-González","doi":"10.1109/MWSYM.2017.8058853","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8058853","url":null,"abstract":"Class E amplifiers have been used in a very broad frequency range. This paper expose a general review of the basic application of class E amplifiers for lower frequencies (MF, HF, VHF), including typical components, applications, and results.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":"11 1","pages":"1319-1322"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84812869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A V-band low-phase-noise low-jitter sub-harmonically injection-locked QVCO with high quadrature accuracy in 90-nm CMOS process 一种高正交精度的v波段低相位噪声低抖动亚谐波注入锁定QVCO
2017 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2017-06-01 DOI: 10.1109/MWSYM.2017.8058866
Chun-Ching Chan, Han-Nong Yeh, Gun Huang, Hong-Yeh Chang
{"title":"A V-band low-phase-noise low-jitter sub-harmonically injection-locked QVCO with high quadrature accuracy in 90-nm CMOS process","authors":"Chun-Ching Chan, Han-Nong Yeh, Gun Huang, Hong-Yeh Chang","doi":"10.1109/MWSYM.2017.8058866","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8058866","url":null,"abstract":"A V-band CMOS sub-harmonically injection-locked quadrature voltage-controlled oscillator (SILQVCO) is presented using 90-nm CMOS process in this paper. A transformer coupled topology is employed in the SILQVCO to enhance locking range and operation frequency. The measured free-running oscillation frequency is from 56.6 to 59 GHz with a tuning range of 2.4 GHz. With one-third sub-harmonic injection, the SILQVCO features an overall locking range of 3.5 GHz, a phase noise of −126.8 dBc/Hz at 1-MHz offset, and a RMS jitter of 54 fs. The measured quadrature phase error and amplitude error are 0.32° and 0.26 dB, respectively. As compared with the prior art, this work has the best finger of merits in the millimeter-wave band.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":"25 1","pages":"1359-1362"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91052219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Enabling a constant and efficient flow of wireless energy for IoT sensors 为物联网传感器提供持续高效的无线能量流
2017 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2017-06-01 DOI: 10.1109/MWSYM.2017.8058862
D. Belo, R. Correia, P. Pinho, N. Carvalho
{"title":"Enabling a constant and efficient flow of wireless energy for IoT sensors","authors":"D. Belo, R. Correia, P. Pinho, N. Carvalho","doi":"10.1109/MWSYM.2017.8058862","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8058862","url":null,"abstract":"This work describes the design of an energy efficient transmitter for wireless power transfer applications. The main objective is to power up, efficiently, an IoT sensor moving on a multi-path environment. In this scenario a flexible transmitter will be operated in order to maintain a constant power delivery to the sensor, while maximizing both transmitter and receiver energy efficiency conversions. The mechanism operates on the basis of a backscatter circuit attached to the IoT sensor, creating a feedback link that feeds the transmitter with its Received Signal Strength (RSSI). Experimental results will be reported on a system working at 5.83 GHz for wireless power transfer and 3.45 GHz for the backscattering link.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":"3 1","pages":"1342-1344"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90925621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Interference based W-band single-pole double-throw with tunable liquid crystal based waveguide phase shifters 基于干涉的w波段单极双掷可调谐液晶波导移相器
2017 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2017-06-01 DOI: 10.1109/MWSYM.2017.8059003
M. Jost, R. Reese, M. Nickel, S. Schmidt, H. Maune, R. Jakoby
{"title":"Interference based W-band single-pole double-throw with tunable liquid crystal based waveguide phase shifters","authors":"M. Jost, R. Reese, M. Nickel, S. Schmidt, H. Maune, R. Jakoby","doi":"10.1109/MWSYM.2017.8059003","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8059003","url":null,"abstract":"This work presents an interference based W-band single-pole double-throw (SPDT) in rectangular waveguide and liquid crystal technology. In radiometers, this kind of SPDT can be used e.g. for switching to the calibration load for power calibration. The SPDT is designed with an E-plane power divider, two different paths for the phase shifting regions, being separated by 30 mm to provide enough space for the used magnets for proof-of-concept, and a coupled line combiner, where the interference is taking place. Rexolite 1422 is serving as liquid crystal cavity. The matching is better than −12 dB between 88 GHz to 110 GHz, except a peak around 102 GHz. The insertion loss is less than 3 dB between 89 GHz to 105 GHz, while exhibiting an isolation of at least 9 dB in this frequency range. From 90 GHz to 100 GHz, isolation is even between 10 dB to 12 dB.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":"1 1","pages":"184-187"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90956077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Additive manufactured W-band waveguide components 添加剂制造的w波段波导元件
2017 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2017-06-01 DOI: 10.1109/MWSYM.2017.8058625
Mike Coffey, Shane Verploegh, Stefan Edstaller, Shawn Armstrong, E. Grossman, Z. Popovic
{"title":"Additive manufactured W-band waveguide components","authors":"Mike Coffey, Shane Verploegh, Stefan Edstaller, Shawn Armstrong, E. Grossman, Z. Popovic","doi":"10.1109/MWSYM.2017.8058625","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8058625","url":null,"abstract":"This paper presents several W-band (75–110 GHz) WR-10 waveguide components fabricated using both direct metal laser sintering (DMLS) and stereolithography (SLA), in aluminum, nickel and copper alloys and metal-coated plastic (MCP). The RF performance and surface roughness are measured, and the loss due to surface roughness quantified. The measured loss at 95 GHz ranges from 0.055 dB/cm for the copper-plated plastic waveguides to 0.37 dB/cm for the nickel alloy. From a loss budget study, it is found that standard models do not accurately predict loss due to surface roughness for very rough surfaces. This paper presents the current state-of-the-art in available additive manufactured (AM) waveguide components at W-band.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":"62 1","pages":"52-55"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91285869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Inkjet-printed antenna-electronics interconnections in passive UHF RFID tags 无源超高频RFID标签中的喷墨印刷天线电子互连
2017 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2017-06-01 DOI: 10.1109/MWSYM.2017.8058638
Han He, Jun Tajima, L. Sydänheimo, H. Nishikawa, L. Ukkonen, J. Virkki
{"title":"Inkjet-printed antenna-electronics interconnections in passive UHF RFID tags","authors":"Han He, Jun Tajima, L. Sydänheimo, H. Nishikawa, L. Ukkonen, J. Virkki","doi":"10.1109/MWSYM.2017.8058638","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8058638","url":null,"abstract":"We outline the possibilities of inkjet printing in fabrication of passive UHF RFID tag antennas and antenna-electronics interconnections on paper and polyimide substrates. In our method, the silver nanoparticle tag antenna is deposited directly on top of the IC fixture, in order to simplify the manufacturing process by removing one step, i.e., the IC attachment with conductive glue. Our wireless measurement results confirm that the manufactured RFID tags with the printed antenna-lC interconnections achieve peak read ranges of 8.5–10 meters, which makes them comparable to traditional tags with epoxy-glued ICs.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":"42 1","pages":"598-601"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91359942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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