一种高正交精度的v波段低相位噪声低抖动亚谐波注入锁定QVCO

Chun-Ching Chan, Han-Nong Yeh, Gun Huang, Hong-Yeh Chang
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引用次数: 6

摘要

本文提出了一种基于90纳米CMOS工艺的v波段亚谐波注入锁相正交压控振荡器(SILQVCO)。在SILQVCO中采用变压器耦合拓扑结构来提高锁定范围和工作频率。测量的自由运行振荡频率为56.6 ~ 59 GHz,调谐范围为2.4 GHz。在三分之一次谐波注入的情况下,SILQVCO的总体锁定范围为3.5 GHz,在1 mhz偏移时相位噪声为- 126.8 dBc/Hz, RMS抖动为54 fs。测量到的正交相位误差和幅度误差分别为0.32°和0.26 dB。与现有技术相比,本技术在毫米波波段具有最好的优点。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A V-band low-phase-noise low-jitter sub-harmonically injection-locked QVCO with high quadrature accuracy in 90-nm CMOS process
A V-band CMOS sub-harmonically injection-locked quadrature voltage-controlled oscillator (SILQVCO) is presented using 90-nm CMOS process in this paper. A transformer coupled topology is employed in the SILQVCO to enhance locking range and operation frequency. The measured free-running oscillation frequency is from 56.6 to 59 GHz with a tuning range of 2.4 GHz. With one-third sub-harmonic injection, the SILQVCO features an overall locking range of 3.5 GHz, a phase noise of −126.8 dBc/Hz at 1-MHz offset, and a RMS jitter of 54 fs. The measured quadrature phase error and amplitude error are 0.32° and 0.26 dB, respectively. As compared with the prior art, this work has the best finger of merits in the millimeter-wave band.
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