2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2最新文献_第2页

Rapid fabrication of Cu(In,Ga)Se2 thin films by the two-step selenization process 两步硒化法快速制备Cu(In,Ga)Se2薄膜

2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2 Pub Date : 2013-01-01 DOI: 10.1109/pvsc-vol2.2013.6656749

S. Ishizuka, L. Mansfield, C. Dehart, M. Scott, B. To, M. Young, B. Egaas, R. Noufi

{"title":"Rapid fabrication of Cu(In,Ga)Se2 thin films by the two-step selenization process","authors":"S. Ishizuka, L. Mansfield, C. Dehart, M. Scott, B. To, M. Young, B. Egaas, R. Noufi","doi":"10.1109/pvsc-vol2.2013.6656749","DOIUrl":"https://doi.org/10.1109/pvsc-vol2.2013.6656749","url":null,"abstract":"Two-step processes currently used for the industrial Cu(In,Ga)Se2 (CIGS) module production require a long process time of several hours for the CIGS absorber formation. In this paper, we are studying the reaction pathway to rapid selenization of stacked metal precursors in elemental Se vapor. The objective is to understand the reaction kinetics to find the best precursor structure and the optimal selenization conditions to form high-quality CIGS films with proper Ga depth profiles. In addition to stacked metal precursors, the effect of the use of Se-containing precursors was also examined. As expected, the stacking order of themetal precursors influences the properties of the resultingCIGS absorbers. The Cu amount deposited for the precursor formation critically affected the final film and cell properties, as well.We also found that the formation of CIGS films with large grain sizes and flat Ga depth profiles was possible even for [Cu]/([In] + [Ga]) < 1 conditions with the use of particular precursor structures and selenization conditions. The results suggest that the selenization reaction pathway can be dictated with the precursor structure, and further improvements are expected by controlling reaction kinetics with precursor structure modification.","PeriodicalId":6420,"journal":{"name":"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83718961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

The influence of high temperatures on radiation damage of GaInP2/GaAs/Ge triple junction cells 高温对GaInP2/GaAs/Ge三结电池辐射损伤的影响

2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2 Pub Date : 2013-01-01 DOI: 10.1109/pvsc-vol2.2013.6656726

C. Brandt, C. Baur, A. Caon, P. Muller-Buschbaum, C. Zimmermann, T. Andreev

引用次数: 7

Kesterite successes, ongoing work, and challenges: A perspective from vacuum deposition Kesterite的成功，正在进行的工作和挑战:从真空沉积的角度来看

2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2 Pub Date : 2013-01-01 DOI: 10.1109/pvsc-vol2.2012.6656774

I. Repins, M. Romero, Jian V. Li, S. Wei, D. Kuciauskas, Chunsheng Jiang, C. Beall, C. Dehart, J. Mann, Wan-Ching Hsu, G. Teeter, A. Goodrich, R. Noufi

引用次数: 8

Structural analysis of longitudinal Si-C-N precipitates in multicrystalline silicon 多晶硅中Si-C-N纵向沉淀的结构分析

2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2 Pub Date : 2013-01-01 DOI: 10.1109/pvsc-vol2.2013.6656754

S. Kostner, A. Hahnel, R. Mokso, H. Blumtritt, P. Werner

引用次数: 0

Accelerated aging and contact degradation of CIGS solar cells CIGS太阳能电池的加速老化和接触退化

2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2 Pub Date : 2013-01-01 DOI: 10.1109/pvsc-vol2.2012.6656770

T. Ott, T. Walter, D. Hariskos, O. Kiowski, R. Schaffler

{"title":"Accelerated aging and contact degradation of CIGS solar cells","authors":"T. Ott, T. Walter, D. Hariskos, O. Kiowski, R. Schaffler","doi":"10.1109/pvsc-vol2.2012.6656770","DOIUrl":"https://doi.org/10.1109/pvsc-vol2.2012.6656770","url":null,"abstract":"The long-term stability of solar cells is a crucial factor for the competitiveness of a technology. In this study, the accelerated aging of CIGS solar cells was studied, and the influence of an applied bias during the endurance test on the open-circuit voltage Voc and fill factor (FF) was investigated. Time constants for parameter drifts of the open-circuit voltage and the associated activation energy were determined. The observed parameter drifts will be discussed, and a model will be proposed based on SCAPS simulations, explaining the observed behavior of the electrical characteristics of the solar cells. Therefore, cells were dark annealed under dry conditions at two different temperatures and different voltage biases were applied to the cells. Our study revealed that the application of a positive bias, which is similar to light soaking, first leads to an improvement and stabilization of the open-circuit voltage and FF followed by a slow decrease of these parameters. This long-term decrease can be explained in terms of a back barrier or phototransistor, as simulated with SCAPS. However, applying a positive bias enhances the long-term stability of these devices. The appearance of a back barrier is associated with a time constant exceeding 30 years. Therefore, this degradation mechanism is not critical.","PeriodicalId":6420,"journal":{"name":"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91145414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Comparison of cell performance of ZnS(O,OH)/CIGS solar cells with UV-assisted MOCVD-ZnO:B and sputter-deposited ZnO:Al window layers 紫外辅助MOCVD-ZnO:B和溅射沉积ZnO:Al窗口层ZnS(O,OH)/CIGS太阳能电池性能的比较

2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2 Pub Date : 2013-01-01 DOI: 10.1109/pvsc-vol2.2013.6656753

Taizou Kobayashi, K. Yamauchi, T. Nakada

引用次数: 0

Process control of reactive sputter deposition of AlOx and improved surface passivation of crystalline silicon 反应溅射沉积AlOx的工艺控制及改善晶体硅表面钝化

2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2 Pub Date : 2013-01-01 DOI: 10.1109/pvsc-vol2.2013.6656799

Xinyu Zhang, A. Cuevas, A. Thomson

引用次数: 8

A new methodology for calculating the efficiency of multi-junction solar cells 一种计算多结太阳能电池效率的新方法

2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2 Pub Date : 2013-01-01 DOI: 10.1109/pvsc-vol2.2013.6656707

Z. R. Abrams

{"title":"A new methodology for calculating the efficiency of multi-junction solar cells","authors":"Z. R. Abrams","doi":"10.1109/pvsc-vol2.2013.6656707","DOIUrl":"https://doi.org/10.1109/pvsc-vol2.2013.6656707","url":null,"abstract":"The future of high efficiency photovoltaics lies in better utilizing the full solar spectrum. Spectrally splitting the solar input either by using stacked multi-junctions or advanced photonic redistribution of the light into different cell segments can approach theoretical conversion limits. However, while the algorithm for calculating the efficiency for these systems is considered to be definitive, a careful examination of some of the fundamental parameters shows that there are crucial aspects to the calculation that have been overlooked. By recognizing a new set of parameters such as the limited bandwidth of light absorbed in each cell, the non-radiative losses of each segment, and the photon management of incoming and outgoing light, a new approach to the calculation can be obtained. Here, we provide a blueprint for this calculation stemming from the perspective of Information Theory, and its association with the efficiency of solar cells via the relationship between the Entropy of the photons and the Open-Circuit Voltage of a cell. We list these important parameters, and how they relate to the overall efficiency, in a simple, elegant manner. Using these concepts we show how to compensate for these inherent losses by modifying the effective area of each cell segment.","PeriodicalId":6420,"journal":{"name":"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75811935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Analyzing and simulating the reduction in PV powerplant variability due to geographic smoothing in Ota City, Japan and Alamosa, CO 分析和模拟了日本太田市和科罗拉多州阿拉莫萨由于地理平滑而减少的光伏电站可变性

2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2 Pub Date : 2013-01-01 DOI: 10.1109/pvsc-vol2.2012.6656719

M. Lave, J. Stein, A. Ellis

引用次数: 11

Testing and analysis for lifetime prediction of crystalline silicon PV modules undergoing degradation by system voltage stress 系统电压应力退化的晶体硅光伏组件寿命预测测试与分析

2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2 Pub Date : 2013-01-01 DOI: 10.1109/PVSC.2012.6317933

P. Hacke, Ryan M. Smith, K. Terwilliger, S. Glick, D. Jordan, S. Johnston, M. Kempe, S. Kurtz

{"title":"Testing and analysis for lifetime prediction of crystalline silicon PV modules undergoing degradation by system voltage stress","authors":"P. Hacke, Ryan M. Smith, K. Terwilliger, S. Glick, D. Jordan, S. Johnston, M. Kempe, S. Kurtz","doi":"10.1109/PVSC.2012.6317933","DOIUrl":"https://doi.org/10.1109/PVSC.2012.6317933","url":null,"abstract":"Acceleration factors are calculated for crystalline silicon photovoltaic modules under system voltage stress by comparing the module power during degradation outdoors with that in accelerated testing at three temperatures and 85% relative humidity. A lognormal analysis is applied to the accelerated lifetime test data, considering failure at 80% of the initial module power. Activation energy of 0.73 eV for the rate of failure is determined for the chamber testing at constant relative humidity, and the probability of module failure at an arbitrary temperature is predicted. To obtain statistical data for multiple modules over the course of degradation in situ of the test chamber, dark I–V measurements are obtained and transformed using superposition, which is found to be well suited for rapid and quantitative evaluation of potential-induced degradation. It is determined that shunt resistance measurements alone do not represent the extent of power degradation. This is explained with a two-diode model analysis that shows an increasing second diode recombination current and ideality factor as the degradation in module power progresses. Failure modes of the modules stressed outdoors are examined and compared with those stressed in accelerated tests.","PeriodicalId":6420,"journal":{"name":"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76164901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 58