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2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)最新文献

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Radio-luminescence of defects and impurity ions in magnesium aluminates spinel 铝酸镁尖晶石中缺陷和杂质离子的放射发光
2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2012-09-01 DOI: 10.1109/OMEE.2012.6464809
V. Gritsyna, Y. Kazarinov, A. Moskvitin
{"title":"Radio-luminescence of defects and impurity ions in magnesium aluminates spinel","authors":"V. Gritsyna, Y. Kazarinov, A. Moskvitin","doi":"10.1109/OMEE.2012.6464809","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464809","url":null,"abstract":"The investigations of radio-luminescence (RL) in magnesium aluminates spinel crystals at variation of the time, intensity of X-irradiation and temperature of sample were provided. There were registered three prominent RL bands related to electron-hole recombination process at anti-site defects, emission of Mn2+-ions and emission of Cr3+-ions. The kinetics of the growth of indicated RL emissions show the competing processes of the capture of free charge carriers generated at irradiation by intrinsic defects and impurity ions.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"40 1","pages":"153-154"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88454191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Sintering-modified oxymanganospinel ceramics for NTC thermistor application 烧结改性氧化锰尖晶石陶瓷在NTC热敏电阻中的应用
2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2012-09-01 DOI: 10.1109/OMEE.2012.6464846
I. Hadzaman, H. Klym, O. Shpotyuk, M. Brunner, V. Balitska
{"title":"Sintering-modified oxymanganospinel ceramics for NTC thermistor application","authors":"I. Hadzaman, H. Klym, O. Shpotyuk, M. Brunner, V. Balitska","doi":"10.1109/OMEE.2012.6464846","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464846","url":null,"abstract":"Mixed Ni-Co-Cu oxymanganospinels of Cu<inf>0.1</inf>Ni<inf>0.8</inf>Co<inf>0.2</inf>Mn<inf>1.9</inf>O<inf>4</inf> chemical composition are first developed for possible application as high-precise NTC thermistors using nanophase segregation effects controlled by sintering technological route. It is shown that rack-salt NiO phase in these ceramics occurs a decisive role on parasitic degradation caused by thermal storage of the ceramics at the elevated temperatures.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"410 1","pages":"53-54"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77126080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photoluminescence of ZnO nanocrystals at Cetylpyridinium Chloride and Disodium Cromoglycate matrices 氧化锌纳米晶体在氯化十六烷基吡啶和糖基酸二钠基质上的光致发光
2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2012-09-01 DOI: 10.1109/OMEE.2012.6464899
M. Omelchenko, M. Panasyuk, V. Kapustianyk
{"title":"Photoluminescence of ZnO nanocrystals at Cetylpyridinium Chloride and Disodium Cromoglycate matrices","authors":"M. Omelchenko, M. Panasyuk, V. Kapustianyk","doi":"10.1109/OMEE.2012.6464899","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464899","url":null,"abstract":"We report the data concerning investigations of photoluminescence spectra of ZnO nanoparticles in the matrixes of liquid crystal materials performed at T = 290 K within a visible region. The mentioned spectra were obtained at polymeric state of Cetylpyridinium Chloride and Disodium Cromoglycate materials.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"1 1","pages":"205-206"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88294799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Luminescence and radiation defects in irradiated ruby 辐照红宝石的发光和辐射缺陷
2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2012-09-01 DOI: 10.1109/OMEE.2012.6464800
V. Harutyunyan, E. Aleksanyan, E. Hakhverdyan, N. Grigoryan, V. Baghdasaryan, V. Makhov, M. Kirm
{"title":"Luminescence and radiation defects in irradiated ruby","authors":"V. Harutyunyan, E. Aleksanyan, E. Hakhverdyan, N. Grigoryan, V. Baghdasaryan, V. Makhov, M. Kirm","doi":"10.1109/OMEE.2012.6464800","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464800","url":null,"abstract":"The excitations of luminescence in irradiated and non-irradiated ruby crystals are investigated by means of highly polarized synchrotron radiation. In the VUV luminescence spectra the existence of quick and slow emission was observed in irradiated and nonirradiated crystals. The luminescence bands with maximum at 3.8 eV are produced by F+ centers. A new type of quick luminescence was established for the band at 4.6 eV. It is called cross-luminescence and is connected with the recombination of valence band electrons with holes in low-lying core levels. It is shown that the band at 3.0 eV is not due to anionic centers (F-centers), but is determined by a short lifetime emission center.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"26 1","pages":"172-173"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85455145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
ZnMgO:Al Anode layer for organic light emitting diode based on carbazole derivative 基于咔唑衍生物的有机发光二极管阳极层ZnMgO:Al
2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2012-09-01 DOI: 10.1109/OMEE.2012.6464854
G. Luka, D. Volyniuk, A. Tomkeviciene, J. Simokaitiene, J. Gražulevičius, P. Stakhira, V. Cherpak, P. Sybilski, B. Witkowski, M. Godlewski, E. Guziewicz, Z. Hotra, O. Hotra
{"title":"ZnMgO:Al Anode layer for organic light emitting diode based on carbazole derivative","authors":"G. Luka, D. Volyniuk, A. Tomkeviciene, J. Simokaitiene, J. Gražulevičius, P. Stakhira, V. Cherpak, P. Sybilski, B. Witkowski, M. Godlewski, E. Guziewicz, Z. Hotra, O. Hotra","doi":"10.1109/OMEE.2012.6464854","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464854","url":null,"abstract":"We demonstrate the fabrication and properties of an near ultraviolet organic light emitting diode (UV OLED) that contains 2,7-di(9-carbazolyl)-9-(2-ethylhexyl)carbazole organic emitting layer and aluminumdoped magnesium zinc oxide (ZnMgO:Al) layer as transparent electrode. The obtained ZnMgO:Al layer is transparent for the wavelengths longer than 325 nm and has low resistivity of the order of 10−3 Ωcm. The UV OLED device turns on at the applied voltage of 9 V.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"26 1","pages":"37-38"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82628321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Heteronuclear (Co-Sr) 2,3-pyridinedicarboxylate complex as precursor to the oxygen-deficient perovskite SrCoO2.52 异核(Co-Sr) 2,3-吡啶二羧酸配合物作为缺氧钙钛矿SrCoO2.52的前体
2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2012-09-01 DOI: 10.1109/OMEE.2012.6464758
A. Lazarescu, E. Melnic, V. Kravtsov, C. Turta
{"title":"Heteronuclear (Co-Sr) 2,3-pyridinedicarboxylate complex as precursor to the oxygen-deficient perovskite SrCoO2.52","authors":"A. Lazarescu, E. Melnic, V. Kravtsov, C. Turta","doi":"10.1109/OMEE.2012.6464758","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464758","url":null,"abstract":"The heterometallic, single-source precursor with formula {[CoSr(2,3-pdc)<inf>2</inf>(H<inf>2</inf>O)<inf>5</inf>]·3H<inf>2</inf>O}<inf>n</inf> (1), has been synthesized and investigated by elemental analysis, IR-spectroscopy, thermal analysis (TGA) and single crystal X-ray diffraction. The compound 1 crystallizes in the triclinic space group P−1 and is self-organized in a polymeric structure of 2D dimension. Thermal decomposition of 1 leads to the formation of oxygen-deficient perovskite SrCoO<inf>2.52</inf>, as is determined by powder X-ray diffraction.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"7 1","pages":"299-300"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78609741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of gamma irradiation on the dielectric properties of the TlGaS2 single crystal 辐照对TlGaS2单晶介电性能的影响
2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2012-09-01 DOI: 10.1109/OMEE.2012.6464802
S. Mustafaeva, M. Asadov, A. Ismailov
{"title":"Effect of gamma irradiation on the dielectric properties of the TlGaS2 single crystal","authors":"S. Mustafaeva, M. Asadov, A. Ismailov","doi":"10.1109/OMEE.2012.6464802","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464802","url":null,"abstract":"The real (ε′) and imaginary (ε″) parts of complex dielectric permittivity and ac-conductivity (σ<inf>ac</inf>) across the layers of TlGaS<inf>2</inf> single crystal have been measured in the frequency range f = 5 × 10<sup>4</sup> − 3.5 × 10<sup>7</sup> Hz before and after gamma irradiation with doses D<inf>γ</inf> from 5 × 10<sup>4</sup> to 2.15 × 10<sup>6</sup> rad. It was shown that the accumulation of radiation dose in TlGaS<inf>2</inf> single crystal leads to tangible increase in ε″ and to increase of ε″ dispersion. The main parameters of localized states in TlGaS<inf>2</inf> single crystal before and after gamma irradiation were evaluated from high- frequency dielectric measurements.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"1 1","pages":"167-168"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76975434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrochemical aluminium oxide technology for production of electronics 用于电子产品生产的电化学氧化铝技术
2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2012-09-01 DOI: 10.1109/OMEE.2012.6464845
V. Sokol, V. Shulgov
{"title":"Electrochemical aluminium oxide technology for production of electronics","authors":"V. Sokol, V. Shulgov","doi":"10.1109/OMEE.2012.6464845","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464845","url":null,"abstract":"The paper reviews the results of application of porous alumina formed using the electrochemical anodization process. Porous alumina is widely used in the microelectronics as a) anodized aluminum bases, b)systems of multilevel interconnections, c) aluminum packages for VLSIs and hybrid integrated circuits, d) thin-film temperature sensors, e) Al-based heating elements etc. Parameters of the structures with porous anodic alumina are summarized depending on the anodizing conditions.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"375 1","pages":"55-56"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75150219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Inelastic-elastic properties of SiO2, SiO2 + TiO2 + ZrO2 SiO2、SiO2 + TiO2 + ZrO2的非弹弹性性能
2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2012-09-01 DOI: 10.1109/OMEE.2012.6464790
A. Onanko, M. Kulish, O. Lyashenko, G. Prodayvoda, S. Vyzhva, Y. Onanko
{"title":"Inelastic-elastic properties of SiO2, SiO2 + TiO2 + ZrO2","authors":"A. Onanko, M. Kulish, O. Lyashenko, G. Prodayvoda, S. Vyzhva, Y. Onanko","doi":"10.1109/OMEE.2012.6464790","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464790","url":null,"abstract":"A non-destructive method for the technological control of the structure defects in SiO<inf>2</inf> + Si wafers by measuring the internal friction background difference on the nearby harmonics f<inf>1</inf> and f<inf>2</inf> after mechanical and heat treatments.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"45 1","pages":"81-82"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74628191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermoluminescent properties of Mn-doped YAP ceramics mn掺杂YAP陶瓷的热释光性能
2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2012-09-01 DOI: 10.1109/OMEE.2012.6464742
Y. Zhydachevskii, A. Suchocki, M. Berkowski
{"title":"Thermoluminescent properties of Mn-doped YAP ceramics","authors":"Y. Zhydachevskii, A. Suchocki, M. Berkowski","doi":"10.1109/OMEE.2012.6464742","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464742","url":null,"abstract":"The work is devoted to synthesis of Mn-doped YAlO3 (YAP) ceramics by common solid-state reaction and their characterization by photoluminescence and thermoluminescence techniques. An impact of the synthesis conditions on the thermoluminescence (TL) efficiency of the ceramics is analyzed from the point of view of possible application of the material for TL dosimetry of ionizing radiation.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"121 1","pages":"241-242"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76325510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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