A. Onanko, M. Kulish, O. Lyashenko, G. Prodayvoda, S. Vyzhva, Y. Onanko
{"title":"SiO2、SiO2 + TiO2 + ZrO2的非弹弹性性能","authors":"A. Onanko, M. Kulish, O. Lyashenko, G. Prodayvoda, S. Vyzhva, Y. Onanko","doi":"10.1109/OMEE.2012.6464790","DOIUrl":null,"url":null,"abstract":"A non-destructive method for the technological control of the structure defects in SiO<inf>2</inf> + Si wafers by measuring the internal friction background difference on the nearby harmonics f<inf>1</inf> and f<inf>2</inf> after mechanical and heat treatments.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"45 1","pages":"81-82"},"PeriodicalIF":0.0000,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Inelastic-elastic properties of SiO2, SiO2 + TiO2 + ZrO2\",\"authors\":\"A. Onanko, M. Kulish, O. Lyashenko, G. Prodayvoda, S. Vyzhva, Y. Onanko\",\"doi\":\"10.1109/OMEE.2012.6464790\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A non-destructive method for the technological control of the structure defects in SiO<inf>2</inf> + Si wafers by measuring the internal friction background difference on the nearby harmonics f<inf>1</inf> and f<inf>2</inf> after mechanical and heat treatments.\",\"PeriodicalId\":6332,\"journal\":{\"name\":\"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)\",\"volume\":\"45 1\",\"pages\":\"81-82\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/OMEE.2012.6464790\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OMEE.2012.6464790","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Inelastic-elastic properties of SiO2, SiO2 + TiO2 + ZrO2
A non-destructive method for the technological control of the structure defects in SiO2 + Si wafers by measuring the internal friction background difference on the nearby harmonics f1 and f2 after mechanical and heat treatments.