Journal of Contemporary Physics (Armenian Academy of Sciences)最新文献

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Study of the Van der Waals Effect in Potassium Atomic Vapours 钾原子蒸气中范德华效应的研究
IF 0.4 4区 物理与天体物理
Journal of Contemporary Physics (Armenian Academy of Sciences) Pub Date : 2026-01-12 DOI: 10.1134/S1068337225700707
A. D. Sargsyan, D. H. Sarkisyan
{"title":"Study of the Van der Waals Effect in Potassium Atomic Vapours","authors":"A. D. Sargsyan,&nbsp;D. H. Sarkisyan","doi":"10.1134/S1068337225700707","DOIUrl":"10.1134/S1068337225700707","url":null,"abstract":"<p>The Van der Waals effect (VW) in <sup>39</sup>K atomic vapours was experimentally studied using a nanocell made of technical sapphire. At distances of less than 100 nm from the sapphire surface, a strong broadening of atomic transitions and their frequency shifts to the low-frequency region of the spectrum occur. The method of selective reflection (SR) of laser radiation from the sapphire window-atomic vapours boundary was used as a sub-Doppler method, which made it possible to measure the VW interaction coefficient <i>C</i><sub>3</sub> for the potassium atoms. It is shown that a change in the nanocell thickness from 100 to 50 nm results in a decrease in <i>C</i><sub>3</sub>, as calculated from the “red” VW shift, i.e., the so-called “retardation” of the VW effect, which was predicted in theoretical works and experimentally observed. The obtained results are important for the development of miniature submicron devices containing atomic vapours.</p>","PeriodicalId":623,"journal":{"name":"Journal of Contemporary Physics (Armenian Academy of Sciences)","volume":"60 3","pages":"261 - 266"},"PeriodicalIF":0.4,"publicationDate":"2026-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145950776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Theory and Practice of the Synthesis of Polycrystalline Diamond Formations of the Natural Carbonado Type 天然碳酸盐型多晶金刚石合成的理论与实践
IF 0.4 4区 物理与天体物理
Journal of Contemporary Physics (Armenian Academy of Sciences) Pub Date : 2026-01-12 DOI: 10.1134/S1068337225700604
A. N. Avagyan, K. G. Grigoryan, K. A. Sargsyan, G. S. Karakhanyan, A. K. Kostanyan
{"title":"Theory and Practice of the Synthesis of Polycrystalline Diamond Formations of the Natural Carbonado Type","authors":"A. N. Avagyan,&nbsp;K. G. Grigoryan,&nbsp;K. A. Sargsyan,&nbsp;G. S. Karakhanyan,&nbsp;A. K. Kostanyan","doi":"10.1134/S1068337225700604","DOIUrl":"10.1134/S1068337225700604","url":null,"abstract":"<p>In the present work, an attempt is made to carry out a comprehensive theoretical analysis and interpretation of a large body of industrial and laboratory experimental data accumulated in the field of the synthesis of polycrystalline diamond of the carbonado type. The study covers the physicochemical mechanisms of phase transitions in carbon systems, barodiffusion processes, and the role of catalytic components, as well as the kinetic aspects of crystal structure growth. The analysis is based both on experimental data obtained from industrial high-pressure high-temperature (HPHT) installations and on results of targeted laboratory series in which key parameters—pressure, temperature, composition, and dwell time—were varied. Particular attention is paid to correlating industrial and laboratory results with theoretical models of phase equilibrium and growth dynamics, which not only makes it possible to explain the observed phenomena but also to propose approaches for the targeted optimization of the process.</p>","PeriodicalId":623,"journal":{"name":"Journal of Contemporary Physics (Armenian Academy of Sciences)","volume":"60 3","pages":"305 - 317"},"PeriodicalIF":0.4,"publicationDate":"2026-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145950674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Solid-Phase Synthesis and Dielectric Properties of BaZr(BO3)2 Ceramics BaZr(BO3)2陶瓷的固相合成及其介电性能
IF 0.4 4区 物理与天体物理
Journal of Contemporary Physics (Armenian Academy of Sciences) Pub Date : 2026-01-12 DOI: 10.1134/S1068337225700665
A. K. Kostanyan, K. A. Sargsyan, G. S. Karakhanyan, A. A. Muradyan, A. N. Avagyan, V. S. Harutyunyan
{"title":"Solid-Phase Synthesis and Dielectric Properties of BaZr(BO3)2 Ceramics","authors":"A. K. Kostanyan,&nbsp;K. A. Sargsyan,&nbsp;G. S. Karakhanyan,&nbsp;A. A. Muradyan,&nbsp;A. N. Avagyan,&nbsp;V. S. Harutyunyan","doi":"10.1134/S1068337225700665","DOIUrl":"10.1134/S1068337225700665","url":null,"abstract":"<p>The structure, morphology, and dielectric properties of polycrystalline samples of the borate compound BaZr(BO<sub>3</sub>)<sub>2</sub> synthesized by the method of solid-phase reactions were studied. The effect of thermal annealing in the temperature range of 1000–1250°C on the grain morphology, porosity, bulk density, and dielectric properties of the BaZr(BO<sub>3</sub>)<sub>2</sub> samples was investigated. The dielectric properties were investigated in the radio frequency range of 1–10 MHz. The frequency dependences of the dielectric constant and dielectric loss, and the effect of annealing temperature on these dependences were analyzed. For the sample with the highest bulk density (annealed at 1250°C for 2 hours), the dielectric constant and dielectric loss at 1 MHz were found to be 22.36 and 1.05 × 10<sup>–2</sup>, respectively. The synthesized ceramics BaZr(BO<sub>3</sub>)<sub>2</sub> can be considered as a promising material for the preparation of substrates for integrated circuits and ceramic capacitors.</p>","PeriodicalId":623,"journal":{"name":"Journal of Contemporary Physics (Armenian Academy of Sciences)","volume":"60 3","pages":"326 - 333"},"PeriodicalIF":0.4,"publicationDate":"2026-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145950752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Stark Effect in the Generalized MIC–Kepler Problem 广义MIC-Kepler问题中的Stark效应
IF 0.4 4区 物理与天体物理
Journal of Contemporary Physics (Armenian Academy of Sciences) Pub Date : 2025-10-07 DOI: 10.1134/S1068337225700513
L. G. Mardoyan
{"title":"Stark Effect in the Generalized MIC–Kepler Problem","authors":"L. G. Mardoyan","doi":"10.1134/S1068337225700513","DOIUrl":"10.1134/S1068337225700513","url":null,"abstract":"<p>The Stark effect in the generalized MIK–Kepler problem is considered. For a discrete energy spectrum, the wave function of the generalized MIK–Kepler problem is presented in parabolic coordinates, and integrals of motion whose eigenfunctions are the parabolic basis. It is shown that in the generalized MIK–Kepler problem, there is a linear Stark effect, completely removing the degeneracy of energy levels in the azimuthal quantum number, and its dipole moment is calculated. An explicit expression for the additional integral of motion for the generalized MIK–Kepler problem in the presence of a constant uniform electric field is obtained.</p>","PeriodicalId":623,"journal":{"name":"Journal of Contemporary Physics (Armenian Academy of Sciences)","volume":"60 2","pages":"142 - 147"},"PeriodicalIF":0.4,"publicationDate":"2025-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145237014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of the Effect of Ultrasonic Radiation on Aqueous Solutions of Potassium Iodide 超声辐射对碘化钾水溶液影响的研究
IF 0.4 4区 物理与天体物理
Journal of Contemporary Physics (Armenian Academy of Sciences) Pub Date : 2025-10-07 DOI: 10.1134/S106833722570046X
A. H. Davtyan, S. D. Arsentev, H. A. Harutyunyan
{"title":"Study of the Effect of Ultrasonic Radiation on Aqueous Solutions of Potassium Iodide","authors":"A. H. Davtyan,&nbsp;S. D. Arsentev,&nbsp;H. A. Harutyunyan","doi":"10.1134/S106833722570046X","DOIUrl":"10.1134/S106833722570046X","url":null,"abstract":"<p>It has been established for the first time that an aqueous solution of potassium iodide releases molecular iodine under the action of ultrasound radiation when cavitation occurs. The process of iodine release occurs in an oscillatory mode. It has been shown that the rate of iodine release and its maximum concentration depend on the ultrasound intensity, the concentration of the potassium iodide solution and the ultrasound frequency. At the same time, an increase in the concentration of potassium iodide in the initial solution above 5–6% does not lead to a further increase in the concentration of the iodine formed. The dependence of the maximum iodine concentration on the oscillation amplitude of the waveguide end is nonlinear.</p>","PeriodicalId":623,"journal":{"name":"Journal of Contemporary Physics (Armenian Academy of Sciences)","volume":"60 2","pages":"181 - 186"},"PeriodicalIF":0.4,"publicationDate":"2025-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145237015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
X-Ray Interferometric Imaging of Dislocations Generated in “Hard” LLL Interferometer “硬”LLL干涉仪位错的x射线干涉成像
IF 0.4 4区 物理与天体物理
Journal of Contemporary Physics (Armenian Academy of Sciences) Pub Date : 2025-10-07 DOI: 10.1134/S1068337225700471
T. H. Eyramjyan, T. S. Mnatsakanyan, L. A. Haroutunyan
{"title":"X-Ray Interferometric Imaging of Dislocations Generated in “Hard” LLL Interferometer","authors":"T. H. Eyramjyan,&nbsp;T. S. Mnatsakanyan,&nbsp;L. A. Haroutunyan","doi":"10.1134/S1068337225700471","DOIUrl":"10.1134/S1068337225700471","url":null,"abstract":"<p>A “hard” LLL interferometer made of dislocation-free silicon single crystal has been investigated; it differs significantly from previously known types of X-ray interferometers. Such an interferometer is highly sensitive to both initially present and introduced defects in the crystal. Several dislocations were generated in the modified part of the interferometer’s mirror block, as confirmed by X-ray topograms. Interferometric images of dislocations generated in the mirror block were obtained. The numerical simulation of single edge dislocation imaging is carried out according to the considered scheme.</p>","PeriodicalId":623,"journal":{"name":"Journal of Contemporary Physics (Armenian Academy of Sciences)","volume":"60 2","pages":"238 - 242"},"PeriodicalIF":0.4,"publicationDate":"2025-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145236984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Laser Induced Blue Fluorescence in Cs Atomic Vapor Caused by 852 nm Radiation 852 nm激光诱导Cs原子蒸汽的蓝色荧光
IF 0.4 4区 物理与天体物理
Journal of Contemporary Physics (Armenian Academy of Sciences) Pub Date : 2025-10-07 DOI: 10.1134/S1068337225700550
A. D. Sargsyan, D.H. Sarkisyan
{"title":"Laser Induced Blue Fluorescence in Cs Atomic Vapor Caused by 852 nm Radiation","authors":"A. D. Sargsyan,&nbsp;D.H. Sarkisyan","doi":"10.1134/S1068337225700550","DOIUrl":"10.1134/S1068337225700550","url":null,"abstract":"<p>Using laser radiation with a wavelength of 852 nm, which is in resonance with Cs atoms, the bright laser-induced fluorescence (LIF) on the blue lines of 456 and 459 nm (transitions 6<i>S</i><sub>1/2</sub> → 7<i>P</i><sub>3/2</sub> and 6<i>S</i><sub>1/2</sub> → 7 <i>P</i><sub>1/2</sub>) was studied by the transition 6<i>S</i><sub>1/2</sub> → 6<i>P</i><sub>3/2</sub>. A 1 cm long T-shaped sapphire cell containing Cs atomic vapors was used. The LIF power was investigated as a function of the cell temperature. A linear dependence of the LIF power on the pump radiation was observed. The LIF reached a maximum at 100°C. It is shown that the Cs cell can serve as an effective optical up-converter filter of radiation with a wavelength of 852 nm to radiation with a wavelength of 456 nm.</p>","PeriodicalId":623,"journal":{"name":"Journal of Contemporary Physics (Armenian Academy of Sciences)","volume":"60 2","pages":"166 - 170"},"PeriodicalIF":0.4,"publicationDate":"2025-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145236979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Exciton Absorption and Luminescence in CdSe Nanoplatelets: the Influence of Uniform Electric Field 均匀电场对CdSe纳米薄片激子吸收和发光的影响
IF 0.4 4区 物理与天体物理
Journal of Contemporary Physics (Armenian Academy of Sciences) Pub Date : 2025-10-07 DOI: 10.1134/S1068337225700537
A. A. Nahapetyan, L. A. Tadevosyan, D. A. Baghdasaryan, V. A. Harutyunyan
{"title":"Exciton Absorption and Luminescence in CdSe Nanoplatelets: the Influence of Uniform Electric Field","authors":"A. A. Nahapetyan,&nbsp;L. A. Tadevosyan,&nbsp;D. A. Baghdasaryan,&nbsp;V. A. Harutyunyan","doi":"10.1134/S1068337225700537","DOIUrl":"10.1134/S1068337225700537","url":null,"abstract":"<p>The exciton absorption and photoluminescence processes in a uniform electrostatic field perpendicular to the quantization direction in a CdSe nanoplatelet (NPL) are considered. Within the framework of the Takagahara model, the effects of charge carrier polarization in the axial direction are considered. The dependence on incident photon energy is analyzed for exciton absorption, and luminescence coefficients are calculated within the same model. The effects of the NPL’s geometric parameters and the strength of the external field on the absorption and luminescence coefficients are also examined. The results show that when the external field increases, the heights of both the absorption and luminescence peaks decrease. Simultaneously, the corresponding peaks broaden with increasing field strength.</p>","PeriodicalId":623,"journal":{"name":"Journal of Contemporary Physics (Armenian Academy of Sciences)","volume":"60 2","pages":"187 - 194"},"PeriodicalIF":0.4,"publicationDate":"2025-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145236981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thin Films of CdS Formed on a Polyimide Substrate by Chemical Bath Deposition Method 化学浴沉积法在聚酰亚胺衬底上制备CdS薄膜
IF 0.4 4区 物理与天体物理
Journal of Contemporary Physics (Armenian Academy of Sciences) Pub Date : 2025-10-07 DOI: 10.1134/S1068337225700549
S. G. Petrosyan, A. S. Musayelyan, A. S. Tokmajyan, V. F. Gremenok, A. V. Stanchik, K. P. Buskis, O.V. Korolik
{"title":"Thin Films of CdS Formed on a Polyimide Substrate by Chemical Bath Deposition Method","authors":"S. G. Petrosyan,&nbsp;A. S. Musayelyan,&nbsp;A. S. Tokmajyan,&nbsp;V. F. Gremenok,&nbsp;A. V. Stanchik,&nbsp;K. P. Buskis,&nbsp;O.V. Korolik","doi":"10.1134/S1068337225700549","DOIUrl":"10.1134/S1068337225700549","url":null,"abstract":"<p>Thin films of polycrystalline cadmium sulfide (CdS) were deposited on polyimide substrates using the chemical bath deposition method at a fixed solution temperature of (62 ± 1)°C. The influence of deposition time on the structural and optical properties of the resulting thin films was studied in detail. X-ray diffraction (XRD) revealed that the films predominantly consist of the hexagonal phase of CdS, with a crystallite size of approximately 10 nm, which slightly decreases with increasing deposition time. The surface roughness of the films was measured using atomic force microscopy. Scanning electron microscopy showed a uniform, compact, and smooth film surface. Raman measurements revealed three main peaks corresponding to the 1LO, 2LO, and 3LO modes in CdS. Optical measurements showed a high transmittance coefficient (~85%) and a low reflectance coefficient (4–7%) in the spectral range of 520–1000 nm. Due to changes in the stoichiometry of the CdS films, the optical band gap varied within the range of 2.30–2.37 eV with increasing deposition time. Room temperature photoluminescence spectra of the films exhibited two emission peaks located at 500 nm (2.49 eV) and 708 nm (1.75 eV), which can be attributed to free carrier recombination and excitonic or radiative transitions involving donor and acceptor levels, respectively. The obtained results demonstrate that by controlling only the deposition time, it is possible to deposit CdS thin films on polymer substrates at a relatively low chemical bath temperature. These films, without any post-growth treatment, possess sufficiently good physical properties, making them suitable for use in various flexible optoelectronic devices.</p>","PeriodicalId":623,"journal":{"name":"Journal of Contemporary Physics (Armenian Academy of Sciences)","volume":"60 2","pages":"210 - 221"},"PeriodicalIF":0.4,"publicationDate":"2025-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145237079","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigations of the Structure and Morphology of CsPbBr3 Films Deposited by Vacuum Thermal Evaporation 真空热蒸发沉积CsPbBr3薄膜的结构和形貌研究
IF 0.4 4区 物理与天体物理
Journal of Contemporary Physics (Armenian Academy of Sciences) Pub Date : 2025-10-07 DOI: 10.1134/S1068337225700525
L. A. Matevosyan, S. A. Petrosyan, V. P. Mkrtchyan, A. P. Aivazyan, V. S. Harutyunyan
{"title":"Investigations of the Structure and Morphology of CsPbBr3 Films Deposited by Vacuum Thermal Evaporation","authors":"L. A. Matevosyan,&nbsp;S. A. Petrosyan,&nbsp;V. P. Mkrtchyan,&nbsp;A. P. Aivazyan,&nbsp;V. S. Harutyunyan","doi":"10.1134/S1068337225700525","DOIUrl":"10.1134/S1068337225700525","url":null,"abstract":"<p>X-ray diffraction and optical microscopy investigations of the structural and morphological properties of polycrystalline perovskite CsPbBr<sub>3</sub> thin films deposited by vacuum thermal evaporation were conducted. The effect of the thermal annealing regime of the deposited films on their phase composition, microstructure, morphology and degree of crystallographic texturing was studied. The character of the correlation between the average sizes of grains and crystallites (subgrains) and the degree of crystallites` texturing with change of the annealing regime of films was analyzed.</p>","PeriodicalId":623,"journal":{"name":"Journal of Contemporary Physics (Armenian Academy of Sciences)","volume":"60 2","pages":"202 - 209"},"PeriodicalIF":0.4,"publicationDate":"2025-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145237010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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