化学浴沉积法在聚酰亚胺衬底上制备CdS薄膜

IF 0.4 4区 物理与天体物理 Q4 PHYSICS, MULTIDISCIPLINARY
S. G. Petrosyan, A. S. Musayelyan, A. S. Tokmajyan, V. F. Gremenok, A. V. Stanchik, K. P. Buskis, O.V. Korolik
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引用次数: 0

摘要

在(62±1)℃的固定溶液温度下,采用化学浴沉积法在聚酰亚胺衬底上沉积了多晶硫化镉(CdS)薄膜。详细研究了沉积时间对薄膜结构和光学性能的影响。x射线衍射(XRD)表明,薄膜主要由CdS的六方相组成,晶粒尺寸约为10 nm,随着沉积时间的增加,晶粒尺寸略有减小。用原子力显微镜测量了膜的表面粗糙度。扫描电镜显示薄膜表面均匀、致密、光滑。拉曼测量显示cd中的三个主要峰对应于1LO, 2LO和3LO模式。光学测量表明,该材料在520 ~ 1000 nm光谱范围内具有较高的透光系数(~85%)和较低的反射系数(4 ~ 7%)。随着沉积时间的增加,CdS薄膜的光学带隙在2.30 ~ 2.37 eV范围内变化。室温光致发光光谱显示出位于500 nm (2.49 eV)和708 nm (1.75 eV)的两个发射峰,分别归因于供体和受体水平的自由载流子重组和激子或辐射跃迁。结果表明,通过控制沉积时间,可以在相对较低的化学浴温度下在聚合物衬底上沉积CdS薄膜。这些薄膜无需任何后处理,具有足够好的物理性能,使其适合用于各种柔性光电器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Thin Films of CdS Formed on a Polyimide Substrate by Chemical Bath Deposition Method

Thin Films of CdS Formed on a Polyimide Substrate by Chemical Bath Deposition Method

Thin films of polycrystalline cadmium sulfide (CdS) were deposited on polyimide substrates using the chemical bath deposition method at a fixed solution temperature of (62 ± 1)°C. The influence of deposition time on the structural and optical properties of the resulting thin films was studied in detail. X-ray diffraction (XRD) revealed that the films predominantly consist of the hexagonal phase of CdS, with a crystallite size of approximately 10 nm, which slightly decreases with increasing deposition time. The surface roughness of the films was measured using atomic force microscopy. Scanning electron microscopy showed a uniform, compact, and smooth film surface. Raman measurements revealed three main peaks corresponding to the 1LO, 2LO, and 3LO modes in CdS. Optical measurements showed a high transmittance coefficient (~85%) and a low reflectance coefficient (4–7%) in the spectral range of 520–1000 nm. Due to changes in the stoichiometry of the CdS films, the optical band gap varied within the range of 2.30–2.37 eV with increasing deposition time. Room temperature photoluminescence spectra of the films exhibited two emission peaks located at 500 nm (2.49 eV) and 708 nm (1.75 eV), which can be attributed to free carrier recombination and excitonic or radiative transitions involving donor and acceptor levels, respectively. The obtained results demonstrate that by controlling only the deposition time, it is possible to deposit CdS thin films on polymer substrates at a relatively low chemical bath temperature. These films, without any post-growth treatment, possess sufficiently good physical properties, making them suitable for use in various flexible optoelectronic devices.

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来源期刊
CiteScore
1.00
自引率
66.70%
发文量
43
审稿时长
6-12 weeks
期刊介绍: Journal of Contemporary Physics (Armenian Academy of Sciences) is a journal that covers all fields of modern physics. It publishes significant contributions in such areas of theoretical and applied science as interaction of elementary particles at superhigh energies, elementary particle physics, charged particle interactions with matter, physics of semiconductors and semiconductor devices, physics of condensed matter, radiophysics and radioelectronics, optics and quantum electronics, quantum size effects, nanophysics, sensorics, and superconductivity.
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