Solid-Phase Synthesis and Dielectric Properties of BaZr(BO3)2 Ceramics

IF 0.5 4区物理与天体物理 Q4 PHYSICS, MULTIDISCIPLINARY

Journal of Contemporary Physics (Armenian Academy of Sciences) Pub Date : 2026-01-12 DOI:10.1134/S1068337225700665

A. K. Kostanyan, K. A. Sargsyan, G. S. Karakhanyan, A. A. Muradyan, A. N. Avagyan, V. S. Harutyunyan

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Abstract

The structure, morphology, and dielectric properties of polycrystalline samples of the borate compound BaZr(BO₃)₂ synthesized by the method of solid-phase reactions were studied. The effect of thermal annealing in the temperature range of 1000–1250°C on the grain morphology, porosity, bulk density, and dielectric properties of the BaZr(BO₃)₂ samples was investigated. The dielectric properties were investigated in the radio frequency range of 1–10 MHz. The frequency dependences of the dielectric constant and dielectric loss, and the effect of annealing temperature on these dependences were analyzed. For the sample with the highest bulk density (annealed at 1250°C for 2 hours), the dielectric constant and dielectric loss at 1 MHz were found to be 22.36 and 1.05 × 10^–2, respectively. The synthesized ceramics BaZr(BO₃)₂ can be considered as a promising material for the preparation of substrates for integrated circuits and ceramic capacitors.

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BaZr(BO3)2陶瓷的固相合成及其介电性能

研究了固相法合成硼酸盐化合物BaZr(BO3)2的多晶样品的结构、形貌和介电性能。研究了在1000 ~ 1250℃范围内热处理对BaZr(BO3)2样品的晶粒形貌、孔隙率、体积密度和介电性能的影响。在1 ~ 10 MHz的射频范围内研究了其介电性能。分析了介电常数和介电损耗的频率依赖关系，以及退火温度对这些关系的影响。对于体积密度最高的样品（1250℃退火2小时），在1 MHz时介电常数和介电损耗分别为22.36和1.05 × 10-2。合成的陶瓷BaZr(BO3)2可被认为是制备集成电路衬底和陶瓷电容器的有前途的材料。

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来源期刊

Journal of Contemporary Physics (Armenian Academy of Sciences) PHYSICS, MULTIDISCIPLINARY-

CiteScore

1.00

自引率

66.70%

发文量

审稿时长

6-12 weeks

期刊介绍： Journal of Contemporary Physics (Armenian Academy of Sciences) is a journal that covers all fields of modern physics. It publishes significant contributions in such areas of theoretical and applied science as interaction of elementary particles at superhigh energies, elementary particle physics, charged particle interactions with matter, physics of semiconductors and semiconductor devices, physics of condensed matter, radiophysics and radioelectronics, optics and quantum electronics, quantum size effects, nanophysics, sensorics, and superconductivity.