IET Power Electronics最新文献_第7页

Predictive power control strategy without grid voltage sensors of the Vienna rectifier 无电网电压传感器的维也纳整流器功率预测控制策略

IF 1.7 4区工程技术

IET Power Electronics Pub Date : 2024-05-21 DOI: 10.1049/pel2.12707

Tao Yang, Lan Chen, Yiru Miao

{"title":"Predictive power control strategy without grid voltage sensors of the Vienna rectifier","authors":"Tao Yang, Lan Chen, Yiru Miao","doi":"10.1049/pel2.12707","DOIUrl":"10.1049/pel2.12707","url":null,"abstract":"This paper proposes a predictive power control strategy for the three-phase, six-switch Vienna rectifier without grid voltage sensors to reduce the hardware cost and complexity of a high-power PWM rectifier system. Firstly, an algorithm for calculating the AC-side voltage in the αβ coordinate system is derived according to the operating principle of the Vienna rectifier, and a voltage observer is constructed by combining a second-order low-pass filter to estimate the grid voltage. Secondly, a soft start method is designed to solve the problem that the rectifier is prone to inrush current when it is started. Furthermore, the control method of grid voltage sensorless is combined with predictive power control with good dynamic characteristics and simple parameter settings to form the control strategy proposed in this paper. Finally, simulation analysis and experimental verification are carried out on the proposed control strategy. Simulation and experimental results show that the grid voltage estimation has high accuracy, a good surge current suppression effect, unit power factor operation, low input current harmonic content, and good dynamic and steady-state performance. Therefore, the correctness and effectiveness of the strategy proposed in this paper are verified.","PeriodicalId":56302,"journal":{"name":"IET Power Electronics","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2024-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/pel2.12707","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141117696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A novel hybrid PI–backstepping cascade controller for battery–supercapacitor electric vehicles considering various driving cycles scenarios 用于电池-超级电容器电动汽车的新型混合 PI 后步进级联控制器（考虑到各种驾驶周期情况

IF 1.7 4区工程技术

IET Power Electronics Pub Date : 2024-05-21 DOI: 10.1049/pel2.12697

Mohammed-Amine Mossadak, Ahmed Chebak, Nada Ouahabi, Abdelhamid Rabhi, Abdelhafid Ait Elmahjoub

{"title":"A novel hybrid PI–backstepping cascade controller for battery–supercapacitor electric vehicles considering various driving cycles scenarios","authors":"Mohammed-Amine Mossadak, Ahmed Chebak, Nada Ouahabi, Abdelhamid Rabhi, Abdelhafid Ait Elmahjoub","doi":"10.1049/pel2.12697","DOIUrl":"10.1049/pel2.12697","url":null,"abstract":"The integration of supercapacitors as hybrid energy storage systems in electric vehicles has attracted the attention of many researchers and has been considered as a promising solution. Bidirectional DC/DC converters (BDDCs) play a fundamental role in HESS, as they manage the power flow by controlling currents and regulating the DC bus voltage. However, they encounter the challenge of uncertainties and high fluctuation power loads, necessitating the fast dynamics, stability, and high robustness of the controller. This paper proposes a novel hybrid proportional–integral and backstepping cascade controller to regulate the DC-bus voltage under uncertainties and load variations, and to control the current references of the on-boarded sources. To confirm the asymptotic stability of the whole system, a nonlinear stability analysis is conducted using the Lyapunov theorem. A power management strategy is applied to distribute the power loads and generate reference currents for the BDDCs controller. Simulations results under various driving cycles using MATLAB/Simulink demonstrate the superiority of the proposed controller compared to conventional proportional–integral and backstepping controllers. A real-time controller-hardware-in-the-loop test bench is developed to validate the effectiveness of the proposed strategy.","PeriodicalId":56302,"journal":{"name":"IET Power Electronics","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2024-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/pel2.12697","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141117002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Model‐based adaptive control of modular DAB converter for EV chargers 基于模型的电动汽车充电器模块化 DAB 转换器自适应控制

IF 2 4区工程技术

IET Power Electronics Pub Date : 2024-05-21 DOI: 10.1049/pel2.12709

Stefania Cuoghi, Lohith Kumar Pittala, Riccardo Mandrioli, Vincenzo Cirimele, M. Ricco, Gabriele Grandi

{"title":"Model‐based adaptive control of modular DAB converter for EV chargers","authors":"Stefania Cuoghi, Lohith Kumar Pittala, Riccardo Mandrioli, Vincenzo Cirimele, M. Ricco, Gabriele Grandi","doi":"10.1049/pel2.12709","DOIUrl":"https://doi.org/10.1049/pel2.12709","url":null,"abstract":"This paper presents the discrete‐time modelling and control of modular input‐parallel–output‐parallel (IPOP) dual‐active‐bridge (DAB) converters for electric vehicle (EV) charging. The proposed adaptive control system ensures adequate current‐sharing among parallel modules while minimizing DAB current stress by adopting dual phase‐shift modulation. Driven by the growing need for fast EV charging options, the paper highlights the importance of achieving top‐notch control performance, especially with varying load conditions. Specifically, it introduces a discrete‐time model for adjusting controller parameters adaptively, which simplifies the typically cumbersome manual tuning process associated with these systems. The proposed PI formulae are derived to satisfy specifications on the frequency domain as phase margin and the gain crossover frequency of the open loop gain transfer function, ensuring stability and robustness in operation. Moreover, the implementation of these formulae in discrete microcontrollers facilitates seamless PI autotuning for precise current, voltage, or power control. Notably, the proposed control strategy effectively mitigates current overshot issues commonly encountered during module engagement and shedding operations in modular EV chargers. To validate its efficacy, the proposed controller is evaluated through extensive testing and comparisons within the PLECS environment, particularly focusing on a two‐module IPOP‐DAB converter scenario, and including comparisons with classical offline model‐based pole placement methodology. Furthermore, real‐time hardware‐in‐the‐loop experiments are conducted to confirm the feasibility and performance of the proposed controller under realistic EV charging profiles.","PeriodicalId":56302,"journal":{"name":"IET Power Electronics","volume":null,"pages":null},"PeriodicalIF":2.0,"publicationDate":"2024-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141118554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Physical insight into turn-on transient of silicon carbide gate turn-off thyristor 对碳化硅栅极关断晶闸管导通瞬态的物理洞察

IF 2 4区工程技术

IET Power Electronics Pub Date : 2024-05-08 DOI: 10.1049/pel2.12706

Hangzhi Liu, Shiwei Liang, Yuming Zhou, Jun Wang

{"title":"Physical insight into turn-on transient of silicon carbide gate turn-off thyristor","authors":"Hangzhi Liu, Shiwei Liang, Yuming Zhou, Jun Wang","doi":"10.1049/pel2.12706","DOIUrl":"https://doi.org/10.1049/pel2.12706","url":null,"abstract":"Silicon Carbide (SiC) Gate Turn-off (GTO) thyristor is regarded as a promising option for pulsed power applications; however, the formation of high di/dt has been constrained by the slow current rise transient phase and the turn-on current heterogeneity over the chip device. In this paper, a practical integrated multi-cell simulation is performed to physically characterize the turn-on transient of SiC GTO thyristor. Through examining electrical coupling between adjacent cells caused by both parasitics of electrode metallization and carrier travelling via SiC, the current distributions are observed, and the carrier transport dynamics are analyzed in detail. Furthermore, physical mechanisms dominating the current heterogeneity among multi-cells are discovered in depth. It is revealed that the current heterogeneity during the turn-on transient is primarily resulted from the Gate signal delay caused by the Gate Runner metallization, and the lateral interaction from adjacent semiconductor regions adds to this inhomogeneity; however, this situation can be improved once the electrical distance between each Anode contact and the Anode electrode gets lowered. Design method for turn-on performance improvement is also proposed accordingly. Besides, based on the analysis conducted on the multi-cell simulation results, the possible reason of the extremely slow current rise transient phase is speculated and experimentally verified. The improvement in the comprehension of SiC GTO's turn-on transient, which cannot be obtained from the traditional investigation from the viewpoint of one elementary cell, will provide guiding principles helping in directing future efforts to advance the improvement of device design technology.","PeriodicalId":56302,"journal":{"name":"IET Power Electronics","volume":null,"pages":null},"PeriodicalIF":2.0,"publicationDate":"2024-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/pel2.12706","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140949159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimized coil and current flow designs for wireless charging containers with improved even magnetic flux density distribution 用于无线充电容器的优化线圈和电流设计，改善了磁通密度分布的均匀性

IF 2 4区工程技术

IET Power Electronics Pub Date : 2024-05-07 DOI: 10.1049/pel2.12705

Rui Liang, Kaiyuan Wang, Zhen Sun, Junming Zeng, Siyang Liu, Huihuan Wu, Yun Yang

引用次数: 0

New resonant composite magnetic-field probes with high detection sensitivity and electric-field suppression ratio 具有高探测灵敏度和电场抑制比的新型共振复合磁场探头

IF 1.7 4区工程技术

IET Power Electronics Pub Date : 2024-04-30 DOI: 10.1049/pel2.12635

Lei Wang, Hongyue Wang, Chengyang Luo, Yiqiang Chen

{"title":"New resonant composite magnetic-field probes with high detection sensitivity and electric-field suppression ratio","authors":"Lei Wang, Hongyue Wang, Chengyang Luo, Yiqiang Chen","doi":"10.1049/pel2.12635","DOIUrl":"https://doi.org/10.1049/pel2.12635","url":null,"abstract":"This work proposes two differential magnetic-field resonant probes, consisting of a U-shaped single-loop resonant probe (S_probe) and a dual-loops resonant probe (D_probe). These resonant probes are composed of a pair of LC resonant circuits, a pair of strip-lines with two outputs, two rows of via fences, and two different sensing structures (single-loop and dual-loops). Among them, a pair of open stubs as capacitor and shorted stubs as inductor is used to form the LC resonant circuit, via fences are utilized to suppress unwanted electromagnetic wave modes, a U-shaped single-loop and a pair of differential dual-loops is used to receive the electromagnetic signal. In order to prove the rationality of the design, simulation models of the S_probe and D_probe are optimized and manufactured based on four-layers PCBs. In addition, a near-field scanning system with a standard 50 Ω straight microstrip line as calibration kit is used to measure and calibrate these resonant probes. The tested results indicate that these designed magnetic-field probes could operate at 1.575 GHz and have high detection sensitivity and electric-field suppression.","PeriodicalId":56302,"journal":{"name":"IET Power Electronics","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2024-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/pel2.12635","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142152367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

On performance evaluation of high-power, high-bandwidth current measurement technologies for SiC switching devices 关于用于碳化硅开关器件的大功率、高带宽电流测量技术的性能评估

IF 2 4区工程技术

IET Power Electronics Pub Date : 2024-04-30 DOI: 10.1049/pel2.12699

Daniel A. Philipps, Dimosthenis Peftitsis

{"title":"On performance evaluation of high-power, high-bandwidth current measurement technologies for SiC switching devices","authors":"Daniel A. Philipps, Dimosthenis Peftitsis","doi":"10.1049/pel2.12699","DOIUrl":"https://doi.org/10.1049/pel2.12699","url":null,"abstract":"Silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) switch at an unprecedented speed, even at high currents. For accurate dynamic characterization, current sensors must measure high currents at a high bandwidth. Moreover, at high switching speeds, parasitic impedances in the commutation loop become critical. To ensure high-accuracy measurements, the current sensor insertion impedance must be minimal. Here, a two-step current sensor evaluation method is proposed. This method serves the characterization and suitability assessment of high-power, high-bandwidth current sensors for fast-switching applications using SiC power MOSFETs. Conducting a small- and a large-signal transmission behaviour analysis separately results in holistic information about the current sensor behaviour in both time and frequency domain. The proposed method is validated using four commercially available current sensors that are widely used for SiC power MOSFET characterization. The work concludes transferring the knowledge derived in the conducted experiments to a practical, application-oriented sensor selection guide.","PeriodicalId":56302,"journal":{"name":"IET Power Electronics","volume":null,"pages":null},"PeriodicalIF":2.0,"publicationDate":"2024-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/pel2.12699","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140949321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A seven-level switched-capacitor based transformerless inverter with modified PWM strategy to enhance the performance of grid-connected PV systems 基于七电平开关电容器的无变压器逆变器，采用改进型 PWM 策略提高并网光伏系统的性能

IF 2 4区工程技术

IET Power Electronics Pub Date : 2024-04-30 DOI: 10.1049/pel2.12701

Sudipto Mondal, Shuvra Prokash Biswas, Md. Rabiul Islam, Md. Kamal Hosain, Raad Raad

{"title":"A seven-level switched-capacitor based transformerless inverter with modified PWM strategy to enhance the performance of grid-connected PV systems","authors":"Sudipto Mondal, Shuvra Prokash Biswas, Md. Rabiul Islam, Md. Kamal Hosain, Raad Raad","doi":"10.1049/pel2.12701","DOIUrl":"https://doi.org/10.1049/pel2.12701","url":null,"abstract":"Among different types of transformerless photovoltaic inverters, multi-level inverters based on switched-capacitors (SC) are the burning topic of recent decades due to their potential advantages, such as, single source requirement, voltage boosting capability, and high power density. However, for a seven level output voltage, a conventional SC based inverter architecture uses more than two units of SC, a large amount of power switches, which then lead to capacitor voltage balancing problems. This paper presents a seven-level switched-capacitor transformerless inverter (SCTI), which is structured with only two SC units, ten power switches, and a single DC source. The proposed SCTI ensures voltage boosting capability, self-voltage balancing, and low power semiconductor losses. Apart from these, a modified sinusoidal pulse width modulation (MSPWM) is also proposed in this work, which guarantees better thermal performance and low inverter output voltage THD for the proposed SCTI. The proposed SCTI along with the MSPWM is simulated in MATLAB/Simulink and PLECS computer simulation environments. A reduced scale laboratory prototype is also built and tested to ensure the feasibility of the proposed SCTI.","PeriodicalId":56302,"journal":{"name":"IET Power Electronics","volume":null,"pages":null},"PeriodicalIF":2.0,"publicationDate":"2024-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/pel2.12701","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140949322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation into active-gate-driving performance and potential closed-loop controller implementations for silicon carbide MOSFET modules 碳化硅 MOSFET 模块的主动栅极驱动性能和潜在闭环控制器实施研究

IF 1.7 4区工程技术

IET Power Electronics Pub Date : 2024-04-30 DOI: 10.1049/pel2.12698

İlker Şahin, Mason Parker, Ross Mathieson, Stephen Finney, Paul D. Judge

{"title":"Investigation into active-gate-driving performance and potential closed-loop controller implementations for silicon carbide MOSFET modules","authors":"İlker Şahin, Mason Parker, Ross Mathieson, Stephen Finney, Paul D. Judge","doi":"10.1049/pel2.12698","DOIUrl":"https://doi.org/10.1049/pel2.12698","url":null,"abstract":"Active gate driving (AGD) is a promising concept for achieving high-performance power transistor switching. This is particularly crucial for Silicon Carbide (SiC) MOSFETs since their inherently fast switching characteristics give rise to severe overshoots and oscillations which translate into increased levels of electromagnetic interference (EMI) emissions. In this paper, an AGD strategy using a single-pulse applied during the switching transient is considered for a 1200 V 400 A SiC MOSFET module. The effect of single-pulse timing, load current, and temperature on the switching performance is analyzed in detail. The radiated EMI reduction benefits are quantified by H-field and E-field probes. A conceptual closed-loop AGD approach is presented and compared to open-loop operation. For the transistor turn-off case under full load current of 400 A, experimental results show that it is possible to reduce voltage overshoot by 43.3%, voltage and current oscillations by 69.7% and 52.2% respectively, and EMI by 76.6%, with a trade-off in the switching energy by a relatively minor increase of 18.2%, compared to the conventional gate driving case. For the turn-on case, current overshoot was reduced by 32.7%, EMI by 52%, voltage and current oscillations by 54.6% and 52.8%, respectively, with a penalty of 50.9% increase in the switching loss.","PeriodicalId":56302,"journal":{"name":"IET Power Electronics","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2024-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/pel2.12698","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142152366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigations of 4H-SiC trench MOSFET with integrated high-K deep trench and gate dielectric 集成高 K 深沟槽和栅极电介质的 4H-SiC 沟槽 MOSFET 研究

IF 2 4区工程技术

IET Power Electronics Pub Date : 2024-04-23 DOI: 10.1049/pel2.12700

Jiafei Yao, Yuao Liu, Ang Li, Xue Han, Qing Yao, Kemeng Yang, Man Li, Jing Chen, Maolin Zhang, Jun Zhang, Yufeng Guo

{"title":"Investigations of 4H-SiC trench MOSFET with integrated high-K deep trench and gate dielectric","authors":"Jiafei Yao, Yuao Liu, Ang Li, Xue Han, Qing Yao, Kemeng Yang, Man Li, Jing Chen, Maolin Zhang, Jun Zhang, Yufeng Guo","doi":"10.1049/pel2.12700","DOIUrl":"10.1049/pel2.12700","url":null,"abstract":"This paper proposes and investigates a novel 4H-SiC trench MOSFET (TMOS) with integrated high-K deep trench and gate dielectric (INHK-TMOS). The integrated high-K (INHK) consists of a high-K gate dielectric and an extended high-K deep trench dielectric in the drift region. Firstly, the high-K gate dielectric together with the metal-forming high-K metal gate structure, which increases the gate oxide capacitance (COX), reduces the threshold voltage (VTH) and the specific on-resistance (Ron,sp). Secondly, the extended high-K deep trench dielectric not only modulates the electric field in the drift region by introducing a new electric field peak at the bottom of the high-K deep trench dielectric, thereby enhancing the breakdown voltage (BV), but also improves the doping concentration (ND) of the drift region by the assist depletion effect of the high-K dielectric, further optimizing the forward conduction characteristics. Simulation results demonstrate that when compared to the conventional TMOS, the INHK-TMOS using HfO2 exhibits a 52.6% reduction in VTH, a 52.1% reduction in Ron,sp, a 20.3% increasement in BV and a 202.3% improvement in figure of merit.","PeriodicalId":56302,"journal":{"name":"IET Power Electronics","volume":null,"pages":null},"PeriodicalIF":2.0,"publicationDate":"2024-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/pel2.12700","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140669325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0