Nano LettersPub Date : 2025-09-21DOI: 10.1021/acs.nanolett.5c03135
Bin Wang, , , Hui Zhu*, , , Huhu Cheng, , and , Liangti Qu*,
{"title":"Ultradense Network Hydrogels for Rapid Solar Vapor Generation","authors":"Bin Wang, , , Hui Zhu*, , , Huhu Cheng, , and , Liangti Qu*, ","doi":"10.1021/acs.nanolett.5c03135","DOIUrl":"10.1021/acs.nanolett.5c03135","url":null,"abstract":"<p >Hydrogel evaporators have enabled evaporation rates beyond thermal limits, attracting wide attention. Macroporous hydrogels with pore sizes larger than 1 μm are generally preferred by researchers because they offer higher evaporation rates than dense hydrogels. However, during long-term application, macroporous hydrogels are prone to pore collapse and are susceptible to factors such as salt crystallization, impurities, and microbial contamination, thus shortening their service life. Herein we propose an interpenetrating network hydrogel (IPNH) with a mesoporous structure (4.2 nm pores) achieving a 1-sun evaporation rate of 4.4 kg m<sup>–2</sup> h<sup>–1</sup>, surpassing those of many macroporous hydrogels. This is attributed to its hydrophilic dense network structure, which not only enables efficient water activation and a record-low water evaporation enthalpy (747 J/g at 23 °C) but also balances highly efficient 2 water transport and heat loss. Furthermore, the mesoporous structure imparts IPNH with long-term durability and excellent antifouling capability, making it highly promising for practical applications.</p>","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"25 39","pages":"14270–14278"},"PeriodicalIF":9.1,"publicationDate":"2025-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145103402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Ligand-Regulated Long-Lived Charge Transfer Dynamics in Atomically Precise Metal Nanoclusters","authors":"Hao-Hua Deng, , , Kai-Yuan Huang, , , Xin Huang, , , Zhi-Qiang Yang, , , Hamada A. A. Noreldeen, , , Ying Wang, , , Wei-Ming Sun, , , Qiaofeng Yao*, , , Wei Chen*, , and , Jianping Xie*, ","doi":"10.1021/acs.nanolett.5c03786","DOIUrl":"10.1021/acs.nanolett.5c03786","url":null,"abstract":"<p >Ligand-mediated long-lived charge transfer (CT) represents a promising mechanism for harvesting excitons in atomically precise metal nanoclusters (NCs), paving the way for highly efficient applications in photocatalysis, photovoltaics, and artificial photosynthesis. Despite its significance, the intricate role of ligands in modulating long-lived CT dynamics in excited metal NCs remains poorly understood. Herein, we establish foundational principles for ligand engineering to elucidate the kinetics of long-lived CT. Our findings reveal that incorporating bulky ligands significantly mitigates the attenuation of charge separation rates while concurrently increasing the decay rates of charge recombination, resulting in markedly enhanced charge separation efficiency. As a consequence, metal NCs with bulky ligands demonstrate improved generation efficiency of reactive oxygen species and increased photocurrent intensity. These insights not only clarify the longstanding debate surrounding the influence of small-sized ligands on the light-conversion efficiency of metal NCs but also advance their potential as effective light harvesters in cutting-edge technologies.</p>","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"25 39","pages":"14427–14435"},"PeriodicalIF":9.1,"publicationDate":"2025-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145089381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Nano LettersPub Date : 2025-09-20DOI: 10.1021/acs.nanolett.5c02650
Anusha Kamath Manjeshwar*, , , Zhifei Yang, , , Chin-Hsiang Liao, , , Jiaxuan Wen, , , Steven J. Koester, , , Richard D. James, , and , Bharat Jalan*,
{"title":"Ferroelectric Switching in Hybrid Molecular-Beam-Epitaxy-Grown BaTiO3 Films","authors":"Anusha Kamath Manjeshwar*, , , Zhifei Yang, , , Chin-Hsiang Liao, , , Jiaxuan Wen, , , Steven J. Koester, , , Richard D. James, , and , Bharat Jalan*, ","doi":"10.1021/acs.nanolett.5c02650","DOIUrl":"10.1021/acs.nanolett.5c02650","url":null,"abstract":"<p >Molecular beam epitaxy (MBE) is a promising synthesis technique for both heterostructure growth and epitaxial integration of ferroelectric BaTiO<sub>3</sub>. However, direct measurement of the remnant polarization (<i>P</i><sub>r</sub>) has not been previously reported in MBE-grown BaTiO<sub>3</sub> films. We report the <i>in situ</i> growth of an all-epitaxial SrRuO<sub>3</sub>/BaTiO<sub>3</sub>/SrRuO<sub>3</sub> heterostructure on Nb-doped SrTiO<sub>3</sub> (001) substrates by hybrid MBE using metal–organic precursors. This capacitor structure consisting of 16 nm SrRuO<sub>3</sub>/40 nm BaTiO<sub>3</sub>/16 nm SrRuO<sub>3</sub> shows hysteretic polarization–electric field (<i>P</i>–<i>E</i>) curves with <i>P</i><sub>r</sub> ∼ 15 μC cm<sup>–2</sup> at frequencies ranging from 500 Hz to 20 kHz, after isolating the intrinsic ferroelectric response from non-ferroelectric contributions using the Positive-Up-Negative-Down (PUND) method. We hypothesize that the asymmetry in switching behavior and current leakage has origins in structural defects. This work opens the door to defect-engineered ferroelectric BaTiO<sub>3</sub>-based heterostructures grown by hybrid MBE for future electronic, photonic and spintronic applications.</p>","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"25 39","pages":"14246–14255"},"PeriodicalIF":9.1,"publicationDate":"2025-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145089377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Chiral Terbium Halide for Narrow-Band X-ray Scintillation","authors":"Xinyi Niu, , , Haolin Lu, , , Bo Zhang, , , Tianyin Shao, , , Yunxin Zhang, , , Hebin Wang, , , Zhaoyu Wang, , , Tianjiao Qiao, , , Wenkai Zhao, , , Bing Sun, , , Yuerong Xie, , , Ze Chang, , , Shen Lai*, , , Hao-Li Zhang*, , and , Guankui Long*, ","doi":"10.1021/acs.nanolett.5c03789","DOIUrl":"10.1021/acs.nanolett.5c03789","url":null,"abstract":"<p >Achieving narrow-band radioluminescence remains challenging despite its critical importance in display technologies. Here, we construct the novel chiral terbium(III)-based hybrid metal halides (<i>R</i>/<i>S</i>-3BrMBA)<sub>3</sub>TbCl<sub>6</sub> (<b><i>R</i></b>/<b><i>S</i>-BMTC</b>) and systematically investigate their scintillation properties. Benefiting from the heavy atom-enhanced X-ray absorption, negligible self-absorption, and unique 4<i>f</i>-4<i>f</i> transitions of Tb<sup>3+</sup>, <b><i>R</i>-BMTC</b> exhibits excellent X-ray scintillation activity with strong radioluminescence comparable to that of the commercial Bi<sub>4</sub>Ge<sub>3</sub>O<sub>12</sub>. Most importantly, <b><i>R</i>-BMTC</b> exhibits one of the narrowest radioluminescences (∼9 nm) among the reported hybrid metal halides. Additionally, it also exhibit efficient green circularly polarized luminescence with high quantum yield (45.9%) and dissymmetry factor (4.99 × 10<sup>–3</sup>), which are essential for suppressing the optical crosstalk and enhancing the X-ray imaging quality at the boundary. Overall, our work demonstrates an efficient approach for developing the narrow-band X-ray scintillator, thereby advancing the progress of chiral rare-earth halides toward optoelectronic applications.</p>","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"25 39","pages":"14420–14426"},"PeriodicalIF":9.1,"publicationDate":"2025-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145093562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Nano LettersPub Date : 2025-09-20DOI: 10.1021/acs.nanolett.5c03311
Zhaohong Sun, , , Nina Baluyot-Reyes, , , Karla Zamarripa, , , Peter I. Djurovich, , , Mark E. Thompson*, , and , Richard L. Brutchey*,
{"title":"Polytypic Zn–(In,Ga)–Se Nanocrystals with Tunable Emission","authors":"Zhaohong Sun, , , Nina Baluyot-Reyes, , , Karla Zamarripa, , , Peter I. Djurovich, , , Mark E. Thompson*, , and , Richard L. Brutchey*, ","doi":"10.1021/acs.nanolett.5c03311","DOIUrl":"10.1021/acs.nanolett.5c03311","url":null,"abstract":"<p >While the polymorphism of chalcopyrite semiconductors has been widely studied, the wurtzite analogues of defect-chalcopyrite II–III<sub>2</sub>–VI<sub>4</sub> compositions, such as Zn(In,Ga)<sub>2</sub>(S,Se)<sub>4</sub>, remain underexplored. Here, we report the synthesis of polytypic Zn–(In,Ga)–Se multipods via cation exchange using ZnSe as a template. With zinc-blende cores and wurtzite arms elongated along the hexagonal <i>c</i>-axis, the multipods retain the structure and morphology of the ZnSe template. Optical characterization reveals composition-dependent absorption and photoluminescence, tunable from the visible to the near-infrared region, with spectral features distinct from those of previously reported defect-chalcopyrite structures. Temperature-dependent measurements demonstrate strong emission at cryogenic temperatures, which is quenched near room temperature due to thermally activated nonradiative processes. We illustrate the use of ZnSe as a platform for cation exchange toward wurtzite multinary chalcogenides, unlocking access to novel structures with colorful optical properties.</p>","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"25 39","pages":"14310–14316"},"PeriodicalIF":9.1,"publicationDate":"2025-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145093555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Nano LettersPub Date : 2025-09-19DOI: 10.1021/acs.nanolett.5c03547
João Sampaio*, , , Antoine Pascaud, , , Edgar Quero, , , André Thiaville, , , Vincent Polewczyk, , , Alain Marty, , , Frédéric Bonell, , and , Alexandra Mougin,
{"title":"Dzyaloshinskii–Moriya Interaction in Fe5GeTe2 Epitaxial Thin Films","authors":"João Sampaio*, , , Antoine Pascaud, , , Edgar Quero, , , André Thiaville, , , Vincent Polewczyk, , , Alain Marty, , , Frédéric Bonell, , and , Alexandra Mougin, ","doi":"10.1021/acs.nanolett.5c03547","DOIUrl":"10.1021/acs.nanolett.5c03547","url":null,"abstract":"<p >van der Waals ferromagnets, such as Fe<sub>5</sub>GeTe<sub>2</sub>, offer a promising platform for spintronic devices based on chiral magnetic textures, provided a significant Dzyaloshinskii–Moriya interaction (DMI) can be induced to stabilize the textures. Here, we directly measure DMI in epitaxial Fe<sub>5</sub>GeTe<sub>2</sub> thin films using Brillouin light scattering spectroscopy and observe a consistent DMI (<i>D</i> = 0.04 mJ/m<sup>2</sup>) across various thicknesses. Its weak thickness dependence, combined with the nominally symmetric film interfaces, suggests a bulk origin. Although we do not determine the microscopic mechanism, our findings are compatible with <i>ab initio</i> calculations linking DMI to partial ordering of Fe split sites. Additionally, we find a low magnetic dissipation (α < 0.02). The observed DMI, which could be further enhanced by optimizing the Fe site ordering, combined with low dissipation, makes Fe<sub>5</sub>GeTe<sub>2</sub> a strong candidate for exploring the dynamics of chiral magnetic textures in two-dimensional materials.</p>","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"25 39","pages":"14341–14347"},"PeriodicalIF":9.1,"publicationDate":"2025-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145084041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Sustainable Conversion of Herbal Residues into Heterostructured Carbon Anodes for Fast-Charging Lithium-Ion Batteries","authors":"Jiawang Zhou, , , Jieqiu Wang, , , Zitong Qin, , , Zhangqin Shi, , , Mingming Fang, , , Wentao Tu, , , Jinli Hu, , , Yongteng Dong*, , , Xinyang Yue*, , and , Zheng Liang*, ","doi":"10.1021/acs.nanolett.5c03872","DOIUrl":"10.1021/acs.nanolett.5c03872","url":null,"abstract":"<p >The urgent demand for advanced lithium-ion battery (LIB) anodes with high energy density drives exploration beyond conventional graphite (Gr) and hard carbon (HC). Here, we propose a sustainable strategy to convert discarded Nelumbinis Rhizomatis Nodus (NRN) herbal residues into heterostructured carbon anodes (NRNC) via structural reorganization, synergistically addressing resource valorization and electrochemical optimization. The inherent alkali/alkaline earth metals (K, Ca) in NRN promote the formation of nanographitic domains within the HC matrix, forming a distinct “HC–Gr” configuration. The HC framework enables rapid Li<sup>+</sup> diffusion and high-capacity storage, while graphite domains facilitate electron transport and reduce charge-transfer resistance. The hierarchical porosity and conductive network improved rate performance (retaining 75.73% of the initial capacity at 6 C) and cycling stability (75.26% capacity retention after 1000 cycles). This work presents a cost-effective and eco-friendly route to prepare high-performance anodes, promoting the transformation of waste into green energy.</p>","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"25 39","pages":"14442–14450"},"PeriodicalIF":9.1,"publicationDate":"2025-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145083615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Nano LettersPub Date : 2025-09-19DOI: 10.1021/acs.nanolett.5c03702
Cem Doganlar*, , , Paul Schmiedeke, , , Markus Döblinger, , , Jona Zöllner, , , Benjamin Haubmann, , , Severin Reitberger, , , Knut Müller-Caspary, , , Jonathan J. Finley, , and , Gregor Koblmüller*,
{"title":"A Defect-Free Vertical-Cavity GaAs-Based Nanowire Laser on Silicon Emitting at the Telecom O-Band","authors":"Cem Doganlar*, , , Paul Schmiedeke, , , Markus Döblinger, , , Jona Zöllner, , , Benjamin Haubmann, , , Severin Reitberger, , , Knut Müller-Caspary, , , Jonathan J. Finley, , and , Gregor Koblmüller*, ","doi":"10.1021/acs.nanolett.5c03702","DOIUrl":"10.1021/acs.nanolett.5c03702","url":null,"abstract":"<p >Telecom-band vertical-cavity nanowire (NW) lasers are promising integrated light sources for silicon (Si) photonics applications but have remained elusive within the important GaAs materials system. Here, we demonstrate the direct site-selective integration of a vertical-cavity GaAs-based NW laser on Si that exhibits lasing emission in its as-grown geometry at the telecom O-band (∼1.3 μm). This achievement relies on an advanced NW heterostructure using an InGaAs/InAlGaAs multiple quantum well (MQW) active gain region coaxially integrated on a vertical GaAsSb NW core with high Sb content to minimize strain energy. Consequently, uniform composition throughout the entire MQW and minimal strain (<1.3 ± 0.2%) with no extended defects are verified by scanning transmission electron microscopy and nanobeam electron diffraction. Single-mode lasing is consistently observed for a range of operation temperatures under optical pumping with lasing thresholds as low as 160 μJ/cm<sup>2</sup>. Mode-dependent threshold gain analyses reveal further that a high-order transverse mode is responsible for lasing.</p>","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"25 39","pages":"14377–14383"},"PeriodicalIF":9.1,"publicationDate":"2025-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5c03702","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145083363","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Mn-Intercalation-Induced Burstein–Moss Shift and Broadband Emission in MoSe2","authors":"Sreyan Raha, , , Prasun Boyal, , , Suvadip Masanta, , , Chumki Nayak, , , Abhijit Roy, , , Prabir Pal, , , Priya Mahadevan*, , and , Achintya Singha*, ","doi":"10.1021/acs.nanolett.5c03491","DOIUrl":"10.1021/acs.nanolett.5c03491","url":null,"abstract":"<p >Mn intercalation in molybdenum diselenide (MoSe<sub>2</sub>) is explored as a strategy to tune the optoelectronic properties of transition metal dichalcogenides (TMDs). We demonstrate that Mn preferentially occupies an interstitial site in a divalent state, donating two electrons to the conduction band of MoSe<sub>2</sub> and inducing a Burstein–Moss blue shift of the band gap. Mn-intercalated samples further exhibit broadband emission arising from combined MoSe<sub>2</sub> excitonic transitions and Mn-related states, supported by first-principles calculations. Activation energies of excitonic emissions, estimated independently from Burstein–Moss shifts and temperature-dependent photoluminescence (PL), show good agreement. Temperature coefficients of all PL peaks were also extracted, offering insights into the recombination pathways in the intercalated system. These findings advance the understanding of intercalation effects in TMDs and highlight the potential of Mn-intercalated TMDs for tunable optoelectronic applications.</p>","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"25 39","pages":"14333–14340"},"PeriodicalIF":9.1,"publicationDate":"2025-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145083330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Atomic Origins of Leakage Paths in Epitaxial Al1–xScxN Thin Films","authors":"Dirui Wu, , , Chao Li, , , Yabei Wu*, , , Yanghe Wang, , , Jinxin Ge, , , Yihan Lei, , , Wenqing Zhang, , and , Changjian Li*, ","doi":"10.1021/acs.nanolett.5c03675","DOIUrl":"10.1021/acs.nanolett.5c03675","url":null,"abstract":"<p >Al<sub>1–<i>x</i></sub>Sc<sub><i>x</i></sub>N, a CMOS-compatible ferroelectric material with high residual polarization and Curie temperature, possesses excellent promise for high-temperature nanoelectronics. However, its high coercive field and leakage current lead to poor endurance, hindering device applications. Sc concentration is crucial to tune ferroelectric coercive field, but the link between Sc doping and leakage current is rarely explored. Here, we report Sc-rich metallic rocksalt nanoscale precipitates in epitaxial wurtzite Al<sub>0.9</sub>Sc<sub>0.1</sub>N via atomic resolution microstructural analysis and nanoscale bandgap mapping. These nanoscale precipitates reduce the local bandgap by 1.0 eV, creating percolation paths that elevate leakage current by 3 orders of magnitude─validated by <i>I</i>–<i>V</i> characterization and first-principles calculations. This result is surprising, as the overall Sc concentration (0.1) is far below the thermodynamic wurtzite-rocksalt phase boundary, highlighting that the Sc spatial distribution control is critical to suppress leakage current. Our approach is generic to study the microscopic origins of the leakage current in wurtzite-ferroelectric materials.</p>","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"25 39","pages":"14371–14376"},"PeriodicalIF":9.1,"publicationDate":"2025-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145078353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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