Nano Letters最新文献_第8页

Resist-Free Shadow Deposition Using Silicon Trenches for Josephson Junctions in Superconducting Qubits 超导量子比特Josephson结用硅沟槽无电阻阴影沉积

IF 9.1 1区材料科学

Nano Letters Pub Date : 2026-11-04 Epub Date: 2026-10-22 DOI: 10.1021/acs.nanolett.6c02734

Tathagata Banerjee, Stephen Daniel Funni, Saswata Roy, Judy J. Cha, Valla Fatemi

引用次数: 0

Confinement Drives Valley Splitting above 4 K in Buried Silicon Quantum Wells 埋藏硅量子阱中4 K以上的约束驱动谷裂

IF 9.1 1区材料科学

Nano Letters Pub Date : 2026-11-04 Epub Date: 2026-10-22 DOI: 10.1021/acs.nanolett.6c04172

Davide Degli Esposti, Emma C. Brann, Asser Elsayed, Davide Costa, Mark Friesen, Giordano Scappucci

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Ultrafast Mimic of Spin Hall Effect in Altermagnets 交替磁体中自旋霍尔效应的超快模拟

IF 9.1 1区材料科学

Nano Letters Pub Date : 2026-11-04 Epub Date: 2026-10-22 DOI: 10.1021/acs.nanolett.6c03208

Ruikai Wu, Deepika Gill, Wenhan Chen, Peter Elliott, Sangeeta Sharma, Sam Shallcross

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Direct Restoration of Spent LiFePO4 via Lattice Defect Correction and Nitrogen-Doped Interface Engineering 利用晶格缺陷修正和掺氮界面工程直接修复废LiFePO4

IF 9.1 1区材料科学

Nano Letters Pub Date : 2026-11-04 Epub Date: 2026-10-22 DOI: 10.1021/acs.nanolett.6c03952

Xutao Liang, Yang Gao, Jiping Ma, Ran Wang, Zelin Lv, Xiaoxiao Li, Yongle Yan, Lifeng Hou, Shi Wang, Zhong Jin, Qian Wang

{"title":"Direct Restoration of Spent LiFePO4 via Lattice Defect Correction and Nitrogen-Doped Interface Engineering","authors":"Xutao Liang, Yang Gao, Jiping Ma, Ran Wang, Zelin Lv, Xiaoxiao Li, Yongle Yan, Lifeng Hou, Shi Wang, Zhong Jin, Qian Wang","doi":"10.1021/acs.nanolett.6c03952","DOIUrl":"10.1021/acs.nanolett.6c03952","url":null,"abstract":"Theproliferation of spent lithium-ion batteries demandsefficient,environmentally sustainable recycling technologies, yet regeneratingspent cathode materials remains challenging. Here, we present a mild,scalable direct regeneration strategy for spent LiFePO4 (S-LFP) cathodes leveraging the synergistic effect of ethanolamineand LiNO3. Ethanolamine with moderate alkalinity and strongreducing capability gently removes surface passivation layers andamorphous impurities, selectively reducing Fe(III) to Fe(II) for lattice-stabilizedvalence balance. Thanks to its low steric hindrance and favorablemass-transport properties, it penetrates particle interiors and cooperateswith Li+ from LiNO3 to fill Li vacancies, eliminatingLi–Fe antisite defects and repairing distorted lattices. Duringsubsequent annealing, ethanolamine acts as an in situ N source toform a uniform N-doped interfacial layer that suppresses side reactionsand boosts charge-transfer kinetics. Regenerated LiFePO4 (R-LFP) achieves 106.04 mAh g–1 at 5.0 C with100% capacity retention over 500 cycles. EverBatt-based assessmentsconfirm its favorable economic and environmental benefits.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"26 43","pages":"15070–15079"},"PeriodicalIF":9.1,"publicationDate":"2026-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149230219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Multilayer Spintronic THz Emitters for On-Chip Ultrafast Current Generation 用于片上超快电流产生的多层自旋电子太赫兹发射器

IF 9.1 1区材料科学

Nano Letters Pub Date : 2026-11-04 Epub Date: 2026-10-22 DOI: 10.1021/acs.nanolett.6c02697

Wolfgang Hoppe, Mohamed Amine Wahada, Paul Marschall, James Caleb Peters, Stuart S. P. Parkin, Georg Woltersdorf

{"title":"Multilayer Spintronic THz Emitters for On-Chip Ultrafast Current Generation","authors":"Wolfgang Hoppe, Mohamed Amine Wahada, Paul Marschall, James Caleb Peters, Stuart S. P. Parkin, Georg Woltersdorf","doi":"10.1021/acs.nanolett.6c02697","DOIUrl":"10.1021/acs.nanolett.6c02697","url":null,"abstract":"Spintronic terahertz(THz) emitters based on ultrafast spin-to-chargeconversion in heavy metal | ferromagnet heterostructures are compact,broadband THz sources with bandwidths exceeding conventional semiconductor-basedemitters. However, achievable current amplitudes per unit area arefundamentally limited by spin-current transport across a single heavymetal | ferromagnet interface. Here, we demonstrate a multilayer spintronicTHz emitter architecture comprising repeated heavy metal | ferromagnetbilayers separated by ultrathin MgO barriers, enabling constructiveaddition of generated charge currents. Using GHz-bandwidth electricalsampling and THz-bandwidth electro-optic sampling, we observe monotonicamplitude enhancement with increasing layer number. This scaling behavioris quantitatively captured by a model incorporating optical absorptionand impedance matching effects. Finally, by integrating multilayeremitters into coplanar waveguide structures, we demonstrate on-chipTHz current generation and propagation. These results establish multilayerspintronic THz emitters as a scalable platform for ultrafast currentgeneration and integrated on-chip THz electronics.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"26 43","pages":"14837–14844"},"PeriodicalIF":9.1,"publicationDate":"2026-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149230221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Correlating Delayed Emission, Blinking Mechanism, and the Quantum-Confined Stark Effect in Single Quantum Dots 单量子点中相关延迟发射、闪烁机制和量子受限斯塔克效应

IF 9.1 1区材料科学

Nano Letters Pub Date : 2026-11-04 Epub Date: 2026-10-23 DOI: 10.1021/acs.nanolett.6c04088

Jialu Li, Xue Han, Changgang Yang, Mi Zhang, Zhihao Chen, Chuang Wang, Zhuang Ying, Jinhui Wang, Ruiyun Chen, Chengbing Qin, Jianyong Hu, Zhichun Yang, Jie Ma, Guofeng Zhang, Liantuan Xiao, Suotang Jia

{"title":"Correlating Delayed Emission, Blinking Mechanism, and the Quantum-Confined Stark Effect in Single Quantum Dots","authors":"Jialu Li, Xue Han, Changgang Yang, Mi Zhang, Zhihao Chen, Chuang Wang, Zhuang Ying, Jinhui Wang, Ruiyun Chen, Chengbing Qin, Jianyong Hu, Zhichun Yang, Jie Ma, Guofeng Zhang, Liantuan Xiao, Suotang Jia","doi":"10.1021/acs.nanolett.6c04088","DOIUrl":"10.1021/acs.nanolett.6c04088","url":null,"abstract":"Delayed emission, a long-lived nonexponential photoluminescencetail, is widely observed in quantum dots (QDs), but its microscopicorigin and relationship with blinking and the quantum-confined Starkeffect (QCSE) remain unclear. Here, we combine single-QD spectroscopy,time-gated photon analysis, and Monte Carlo simulations across CsPbX3 perovskite, CdSe-based, and InP-based QDs to identify a potentialmechanism. Delayed emission correlates with band-edge carrier-trappingblinking, but is weak in QDs dominated by trion-mediated Auger blinking,suggesting delayed emission is not universally tied to charge-separatedstates. Delayed photons originate from nanosecond-scale carrier trappingand detrapping at nonradiative recombination centers: transientlytrapped carriers return to the band edge and recombine radiatively.Time-gated analysis distinguishes this process from QCSE-driven intensity-lifetimefluctuations on slower blinking time scales. Furthermore, we demonstratethat delayed photons compromise the single-photon purity at a fixedexcitation repetition rate. These findings establish a general frameworkof delayed emission in QDs.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"26 43","pages":"15115–15123"},"PeriodicalIF":9.1,"publicationDate":"2026-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149241919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Correction to “Nanoconfined Polymer Dot Reactors for Ultrasensitive Monitoring of Diverse Metabolites and Point-of-Care Diagnosis” 更正“纳米聚合物点反应器用于各种代谢物的超灵敏监测和即时诊断”

IF 9.1 1区材料科学

Nano Letters Pub Date : 2026-11-04 Epub Date: 2026-10-26 DOI: 10.1021/acs.nanolett.6c04870

Yijun Liu, Peng Zhou, Zitong Yang, Yuxin Yao, Haoyu Gong, Yonghong Wu, Peixiang Li, Qin Shentu, Lubin Qi, Zongping Wang, Yating Xiao, Yifei Jiang, Xiaohong Fang

引用次数: 0

Giant Resistance Switching Ratio Exceeding 106 through a Reversible 2D–3D Structural Phase Transition in Nonequilibrium (Pb1–xSnx)Se Thin Films 非平衡（Pb1-xSnx）Se薄膜中超过106的巨阻开关比的可逆2D-3D结构相变

IF 9.1 1区材料科学

Nano Letters Pub Date : 2026-11-04 Epub Date: 2026-10-26 DOI: 10.1021/acs.nanolett.6c03879

Naoto Hoshi, Sota Abe, Sangjin Choi, Kota Hanzawa, Hiroto Arima, Jun-ichi Yamaura, Shogo Hatayama, Hidenori Hiramatsu, Toshio Kamiya, Takayoshi Katase

{"title":"Giant Resistance Switching Ratio Exceeding 106 through a Reversible 2D–3D Structural Phase Transition in Nonequilibrium (Pb1–xSnx)Se Thin Films","authors":"Naoto Hoshi, Sota Abe, Sangjin Choi, Kota Hanzawa, Hiroto Arima, Jun-ichi Yamaura, Shogo Hatayama, Hidenori Hiramatsu, Toshio Kamiya, Takayoshi Katase","doi":"10.1021/acs.nanolett.6c03879","DOIUrl":"10.1021/acs.nanolett.6c03879","url":null,"abstract":"Controland switching of electrical resistance in semiconductorsare important for high-performance electronic devices. Here, we realizegiant resistance switching in nonequilibrium (Pb1–xSnx)Se films througha reversible structural transition between three-dimensional (3D)rock-salt (RS)-type and two-dimensional (2D) GeS-type phases. Thesolid-solution films were fabricated by reactive solid-phase epitaxyof SnSe/PbSe bilayers followed by rapid thermal quenching. Se-fluxannealing of the PbSe template suppressed Pb precipitation, enablingchemically homogeneous, single-phase nonequilibrium RS-type filmsup to x = 0.58. Increasing the Sn content from x = 0.43 to 0.58 systematically increased the 2D–3Dstructural transition temperature and enhanced the resistance switchingratio to 4.9 × 106, far exceeding those of representativetransition-metal oxide thin films (∼102–104). The giant resistance switching originates from the nearlycomplete transformation (∼98%) of the conductive 3D phase intothe high-resistance 2D phase. These results establish crystal-dimensionalityswitching as a promising new mechanism for high-performance electronicswitching devices.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"26 43","pages":"15064–15069"},"PeriodicalIF":9.1,"publicationDate":"2026-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149248750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Rotary DNA Mazzocchio Nanostructure 一种旋转DNAMazzocchio纳米结构

IF 9.1 1区材料科学

Nano Letters Pub Date : 2026-11-04 Epub Date: 2026-10-08 DOI: 10.1021/acs.nanolett.6c03371

Simon Chi-Chin Shiu, Hannah Talbot, Marcello DeLuca, Jonathan Piland, Xiaoyong Mo, Xue-Yan Wang, Edmund C. M. Tse, Gaurav Arya, Arun Richard Chandrasekaran, Julian A. Tanner

{"title":"A Rotary DNA Mazzocchio Nanostructure","authors":"Simon Chi-Chin Shiu, Hannah Talbot, Marcello DeLuca, Jonathan Piland, Xiaoyong Mo, Xue-Yan Wang, Edmund C. M. Tse, Gaurav Arya, Arun Richard Chandrasekaran, Julian A. Tanner","doi":"10.1021/acs.nanolett.6c03371","DOIUrl":"10.1021/acs.nanolett.6c03371","url":null,"abstract":"DNAnanotechnology offers architectures ranging from compact motifsto scaffolded origami, with trade-offs in structural complexity, addressability,and component economy. Here, we translate Leonardo da Vinci’smazzocchio geometry into a programmable DNA assembly. Twenty distinctDNA strands hierarchically assemble into a toroid comprising 32 repeatingoctagonal subunits. Coarse-grained molecular dynamics simulations,transmission electron microscopy, and atomic force microscopy supportformation of the designed architecture while revealing flexibilityat intersubunit connections. The toroid was coupled to a triangularDNA origami platform through 12 DNA walkers distributed among threevertices. Sequential toehold-mediated strand displacement alteredthe attachment topology between the two structures, generating threedocking configurations. Gel electrophoresis and ensemble fluorescencemeasurements produced the expected state-dependent responses, consistentwith programmed repositioning. This work expands the design spaceof dynamic DNA nanotechnology through coupling of a material-efficienttoroidal architecture with the spatial addressability of origami,establishing a versatile platform for reconfigurable nanoscale devices.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"26 43","pages":"14929–14938"},"PeriodicalIF":9.1,"publicationDate":"2026-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149151144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Curvature-Controlled Polar–Dislocation Coupling in Freestanding Ferroelectric Oxide Heterostructures 独立铁电氧化物异质结构中曲率控制的极性位错耦合

IF 9.1 1区材料科学

Nano Letters Pub Date : 2026-11-04 Epub Date: 2026-10-20 DOI: 10.1021/acs.nanolett.6c03549

Jianwei Liang, Yi Huang, Gangchang Li, Congbing Tan, Wenpeng Zhu, Yi Zhang, Yue Zheng

{"title":"Curvature-Controlled Polar–Dislocation Coupling in Freestanding Ferroelectric Oxide Heterostructures","authors":"Jianwei Liang, Yi Huang, Gangchang Li, Congbing Tan, Wenpeng Zhu, Yi Zhang, Yue Zheng","doi":"10.1021/acs.nanolett.6c03549","DOIUrl":"10.1021/acs.nanolett.6c03549","url":null,"abstract":"Curvaturecouples polarization, crystalline defects,and interfacialelectrostatics in freestanding ferroelectric oxides. Here, we examinebent epitaxial Pb(Zr0.2Ti0.8)O3/SrTiO3/Pb(Zr0.2Ti0.8)O3 (PZT/STO/PZT)membranes using atomic-resolution electron microscopy, strain andpolarization mapping, relative projected-potential reconstruction,and molecular dynamics simulations. The tensile-side PZT remains comparativelylattice-continuous and accommodates bending mainly through polarizationrotation and domain reorganization. The compressive-side PZT exhibitsdislocations, slip-related lattice offsets, surface steps, and localizedstrain concentration. Curvature-series observations and images acrossU-shaped and N-shaped regions indicate that the defect-rich regionfollows the local compressive stress state. Bending also breaks theapproximate electrostatic symmetry of the two PZT/STO interfaces:the tensile side shows weakened negative interfacial contrast, whereasthe compressive side shows a dislocation-associated increase in relativeprojected potential. These results identify curvature as a variablefor selecting polar versus plastic relaxation pathways and modulatinginterfacial electrostatic landscapes in flexible ferroelectric heterostructures.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"26 43","pages":"14959–14967"},"PeriodicalIF":9.1,"publicationDate":"2026-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149221739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0