Nano LettersPub Date : 2025-03-31DOI: 10.1021/acs.nanolett.4c06419
Wenxuan Zhu, Hua Bai, Lei Han, Feng Pan, Cheng Song
{"title":"Tunable Quantum Anomalous Hall Effect via Crystal Order in Spin-Splitting Antiferromagnets","authors":"Wenxuan Zhu, Hua Bai, Lei Han, Feng Pan, Cheng Song","doi":"10.1021/acs.nanolett.4c06419","DOIUrl":"https://doi.org/10.1021/acs.nanolett.4c06419","url":null,"abstract":"The quantum anomalous Hall (QAH) effect provides dissipationless channels for spin transport, which is highly expected for low-power quantum computation. Spin-splitting bands are vital for the QAH effect in topological systems, with ferromagnetism indispensable to manipulate the Chern number. Crystal-order-dependent QAH effects in spin-splitting antiferromagnets are proposed here. Since the spin splitting of these antiferromagnets originates from the alternate crystal environment, the Chern number can be modulated by the crystal order, opening an additional dimension for tuning the QAH effect. Our concept is illustrated by two-dimensional (2D) MnBi<sub>2</sub>Te<sub>4</sub> (MBT) with even septuple layers, typical axion insulators with fully magnetic compensation. By interlayer rotation and translation operations, sublattices of MBT with opposite magnetizations are no longer connected by inversion or mirror symmetries, leading to the transition to QAH insulators. Flexible stacking of 2D materials enables a reversible Chern number by crystal design. Our findings would advance QAH effect-based devices toward high controllability, integration density, and operation speed.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"76 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143736866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Nano LettersPub Date : 2025-03-31DOI: 10.1021/acs.nanolett.5c0069610.1021/acs.nanolett.5c00696
Rajesh Mandal*, Shinhee Yun, Katja Wurster, Edwin Dollekamp, Josiah N. Shondo and Nini Pryds*,
{"title":"Recent Advancement in Ferroic Freestanding Oxide Nanomembranes","authors":"Rajesh Mandal*, Shinhee Yun, Katja Wurster, Edwin Dollekamp, Josiah N. Shondo and Nini Pryds*, ","doi":"10.1021/acs.nanolett.5c0069610.1021/acs.nanolett.5c00696","DOIUrl":"https://doi.org/10.1021/acs.nanolett.5c00696https://doi.org/10.1021/acs.nanolett.5c00696","url":null,"abstract":"<p >Ferroic and multiferroic oxides have been of significant interest for the last four decades due to their tremendous potential for next-generation memory and computational technologies. Possessing multiple ferroic orders with strong coupling between them erects a new way toward fast and low voltage switching. The major challenge is the scarcity of multiferroic materials at room temperature operation with a high coupling strength and robust ferroic orderings. Integration of existing multiferroics, mostly complex oxides, into the silicon-based platform also poses a major challenge. The recent development of freestanding oxide membranes offers a versatile solution for new and novel strategies to develop new materials. In this mini-review, we summarize the significant developments that happened in very recent years with ferroic oxide nanomembranes. We outline different approaches that have been implemented in the freestanding membranes to modulate the ferroic orderings, magnetism, ferroelectricity, and ferroelasticity. Along with the well-developed methods, such as bending and stretching of the membranes, we also emphasize the strength of twisting as a promising way to design and tune novel multiferroic orderings.</p>","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"25 14","pages":"5541–5549 5541–5549"},"PeriodicalIF":9.6,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143798719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Nano LettersPub Date : 2025-03-31DOI: 10.1021/acs.nanolett.4c05273
Zhanjie Gao, Wannian Zhao, Xinyue Gao, Aixi Chen, Weixiang Ye, Qinghua Song, Patrice Genevet, Konstantin E. Dorfman
{"title":"Broadband Full Polarization Control Using a Staggered Arrangement of Metamolecules","authors":"Zhanjie Gao, Wannian Zhao, Xinyue Gao, Aixi Chen, Weixiang Ye, Qinghua Song, Patrice Genevet, Konstantin E. Dorfman","doi":"10.1021/acs.nanolett.4c05273","DOIUrl":"https://doi.org/10.1021/acs.nanolett.4c05273","url":null,"abstract":"Metasurfaces show an extraordinary ability for polarization control, despite the limitations imposed by their working bandwidth and complex meta-atom designs. Here, we present a strategy for generating arbitrary polarization in the broadband, relying solely on the Pancharatnam–Berry phase. The proposed metasurface design comprises two metamolecules arranged in a staggered configuration. Importantly, the orientation of the two metamolecules provides a new degree of freedom to control both the amplitude and phase of right- and left-circular polarization components. We experimentally demonstrated that the polarization of the scattered light can cover the entire Poincaré sphere by merely tuning the metamolecule orientation. These results provide a unique approach for fabricating ultracompact photonic devices and integrated quantum optical systems.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"21 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143736862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Recent Advancement in Ferroic Freestanding Oxide Nanomembranes","authors":"Rajesh Mandal, Shinhee Yun, Katja Wurster, Edwin Dollekamp, Josiah N. Shondo, Nini Pryds","doi":"10.1021/acs.nanolett.5c00696","DOIUrl":"https://doi.org/10.1021/acs.nanolett.5c00696","url":null,"abstract":"Ferroic and multiferroic oxides have been of significant interest for the last four decades due to their tremendous potential for next-generation memory and computational technologies. Possessing multiple ferroic orders with strong coupling between them erects a new way toward fast and low voltage switching. The major challenge is the scarcity of multiferroic materials at room temperature operation with a high coupling strength and robust ferroic orderings. Integration of existing multiferroics, mostly complex oxides, into the silicon-based platform also poses a major challenge. The recent development of freestanding oxide membranes offers a versatile solution for new and novel strategies to develop new materials. In this mini-review, we summarize the significant developments that happened in very recent years with ferroic oxide nanomembranes. We outline different approaches that have been implemented in the freestanding membranes to modulate the ferroic orderings, magnetism, ferroelectricity, and ferroelasticity. Along with the well-developed methods, such as bending and stretching of the membranes, we also emphasize the strength of twisting as a promising way to design and tune novel multiferroic orderings.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"183 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143736868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Deteriorated Interlayer Coupling in Twisted Bilayer Cobaltites","authors":"Dongke Rong, Xiuqi Chen, Shengru Chen, Jinfeng Zhang, Yue Xu, Yan-Xing Shang, Haitao Hong, Ting Cui, Qianying Wang, Chen Ge, Can Wang, Qiang Zheng, Qinghua Zhang, Lingfei Wang, Yu Deng*, Kuijuan Jin*, Gang-Qin Liu* and Er-Jia Guo*, ","doi":"10.1021/acs.nanolett.5c0153810.1021/acs.nanolett.5c01538","DOIUrl":"https://doi.org/10.1021/acs.nanolett.5c01538https://doi.org/10.1021/acs.nanolett.5c01538","url":null,"abstract":"<p >A wealth of remarkable behaviors is observed at the interfaces between magnetic oxides due to the coexistence of Coulomb repulsion and interatomic exchange interactions. While previous research has focused on bonded oxide heterointerfaces, studies on magnetism in van der Waals interfaces remain rare. In this study, we stacked two freestanding cobaltites with precisely controlled twist angles. Scanning transmission electron microscopy revealed clear and ordered moiré patterns, which exhibit an inverse relationship with the twist angle. We observed that the Curie temperature in the twisted region is lower than that in the single-layer region and varies systematically with the twist angle. This phenomenon may be related to the weakening of the orbital hybridization between oxygen ions and transition metal ions in the unbonded interfaces. Our findings suggest a potential avenue for modulating magnetic interactions in correlated systems through twist, providing opportunities for the discovery of unknown quantum states.</p>","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"25 14","pages":"5965–5973 5965–5973"},"PeriodicalIF":9.6,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143798720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Nano LettersPub Date : 2025-03-31DOI: 10.1021/acs.nanolett.5c0078710.1021/acs.nanolett.5c00787
Sumner B. Harris*, Patrick T. Gemperline, Christopher M. Rouleau, Rama K. Vasudevan and Ryan B. Comes*,
{"title":"Deep Learning with Reflection High-Energy Electron Diffraction Images to Predict Cation Ratio in Sr2xTi2(1–x)O3 Thin Films","authors":"Sumner B. Harris*, Patrick T. Gemperline, Christopher M. Rouleau, Rama K. Vasudevan and Ryan B. Comes*, ","doi":"10.1021/acs.nanolett.5c0078710.1021/acs.nanolett.5c00787","DOIUrl":"https://doi.org/10.1021/acs.nanolett.5c00787https://doi.org/10.1021/acs.nanolett.5c00787","url":null,"abstract":"<p >Machine learning (ML) with in-situ diagnostics offers a transformative approach to accelerate, understand, and control thin film synthesis by uncovering relationships between synthesis conditions and material properties. In this study, we demonstrate the application of deep learning to predict the stoichiometry of Sr<sub>2<i>x</i></sub>Ti<sub>2(1–<i>x</i>)</sub>O<sub>3</sub> thin films using reflection high-energy electron diffraction images acquired during pulsed laser deposition. A gated convolutional neural network trained for regression of the Sr atomic fraction achieved accurate predictions with a small dataset of 31 samples. Explainable AI techniques revealed a previously unknown correlation between diffraction streak features and cation stoichiometry in Sr<sub>2<i>x</i></sub>Ti<sub>2(1–<i>x</i>)</sub>O<sub>3</sub> thin films. Our results demonstrate how ML can be used to transform a ubiquitous <i>in-situ</i> diagnostic tool, that is usually limited to qualitative assessments, into a quantitative surrogate measurement of continuously valued thin film properties. Such methods are critically needed to enable real-time control, autonomous workflows, and accelerate traditional synthesis approaches.</p>","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"25 14","pages":"5867–5874 5867–5874"},"PeriodicalIF":9.6,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143798882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Nano LettersPub Date : 2025-03-30DOI: 10.1021/acs.nanolett.4c06302
Lang Hu, Xiaohao Jiang, Jiamin Wang, Honggui Wang, Ya Zhang, Xiaodong Yi, Jie Han
{"title":"Direct Utilization of a HF-Treated Si Photocathode for Efficient Hydrogen Production","authors":"Lang Hu, Xiaohao Jiang, Jiamin Wang, Honggui Wang, Ya Zhang, Xiaodong Yi, Jie Han","doi":"10.1021/acs.nanolett.4c06302","DOIUrl":"https://doi.org/10.1021/acs.nanolett.4c06302","url":null,"abstract":"Silicon (Si)-based photocathodes are generally considered as ideal materials for photoelectrochemical (PEC) hydrogen production. The fabrication of Si-based photocathodes usually requires hydrofluoric acid (HF) treatment to remove the oxide layer first, and H-dangling bonds can be formed inevitably on the surface of Si at the same time. However, the impacts of Si–H bonds in the PEC reaction are usually ignored. Here we report that the enriched H-dangling bonds at the solid–liquid interface play multiple roles in PEC hydrogen production, which can both efficiently collect photogenerated electrons from Si and accelerate the kinetics of the hydrogen evolution reaction at the interface. Furthermore, the coupling mechanism of H<sub>2</sub> production triggered by H-dangling bonds significantly improves the efficiency of the PEC process. This work demonstrates that the HF-treated Si photocathode can be directly used for efficient hydrogen production, which will undoubtedly force a new phase in the study of Si-based photocathodes.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"42 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2025-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143736872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Thermally Stable Cellulose-Based Triboelectric Nanogenerators with Ultrahigh Charge Density Enabled by Deep Traps and Multiple Noncovalent Interactions","authors":"Feijie Wang, Yueming Hu, Chao Jia, Suyang Wang, Hao Wang, Yichi Liu, Shiqiang Ouyang, Shenzhuo Zhang, Shufeng Ma, Zhen Wu, Liqiang Wang","doi":"10.1021/acs.nanolett.4c05643","DOIUrl":"https://doi.org/10.1021/acs.nanolett.4c05643","url":null,"abstract":"Stable high-output for triboelectric nanogenerators (TENGs) in extreme environments is challenged by high charge dissipation rates and friction layer degradation at high temperatures. This study introduces a triboelectric material design that ensures stable high-output at high temperatures through a synergistic approach of multilayer noncovalent bonding and increased surface deep trap density. By grafting sulfonic acid groups onto cellulose and incorporating self-assembled molecules with large energy gaps, we significantly enhance the dielectric’s charge storage capacity and reduce charge dissipation by 82%. The modified cellulose exhibits a notable increase in deep trap density and improved mechanical properties through enhanced high-enthalpy states from noncovalent interactions. As a result, TENGs achieve an ultrahigh surface charge density of 152 μC/m<sup>2</sup> at 250 °C. This strategy presents a simple method for constructing TENGs with stabilized electrical output in high-temperature settings, facilitating their use as self-powered sensors in extreme conditions.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"58 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2025-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143736385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Nano LettersPub Date : 2025-03-29DOI: 10.1021/acs.nanolett.4c06297
Ruiyang Song, Peng Wang, Haiou Zeng, Shengping Zhang, Ningran Wu, Yuancheng Liu, Pan Zhang, Guodong Xue, Junhe Tong, Bohai Li, Hongfei Ye, Kaihui Liu, Wei Wang, Luda Wang
{"title":"Nanofluidic Memristive Transition and Synaptic Emulation in Atomically Thin Pores","authors":"Ruiyang Song, Peng Wang, Haiou Zeng, Shengping Zhang, Ningran Wu, Yuancheng Liu, Pan Zhang, Guodong Xue, Junhe Tong, Bohai Li, Hongfei Ye, Kaihui Liu, Wei Wang, Luda Wang","doi":"10.1021/acs.nanolett.4c06297","DOIUrl":"https://doi.org/10.1021/acs.nanolett.4c06297","url":null,"abstract":"Ionic transport across nanochannels is the basis of communications in living organisms, enlightening neuromorphic nanofluidic iontronics. Comparing to the angstrom-scale long biological ionic pathways, it remains a great challenge to achieve nanofluidic memristors at such thinnest limit due to the ambiguous electrical model and interaction process. Here, we report atomically thin memristive nanopores in two-dimensional materials by designing optimized ionic conductance to decouple the memristive, ohmic, and capacitive effects. By conducting different charged iontronics, we realize the reconfigurable memristive transition between nonvolatile-bipolar and volatile-unipolar characteristics, which arises from distinct transport processes governed by energy barriers. Notably, we emulate synaptic functions with ultralow energy consumption of ∼0.546 pJ per spike and reproduce biological learning behaviors. The memristive nanopores are similar to the biosystems in angstrom structure, rich iontronic responses, and millisecond-level operating pulse width, matching the biological potential width. This work provides a new paradigm for boosting brain-inspired nanofluidic devices.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"216 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2025-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143734481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Synthesis of Two-Dimensional Antiferromagnetic Semiconductor CuFeS2 with a High Néel Temperature","authors":"Di Wang, Yingying Liu, Hua Zhang, Yong Liu, Dan Li, Zucheng Zhang, Ping Lu, Chen Yi, Kun He, Liqiang Zhang, Yanru Wang, Shanhao Li, Miaomiao Liu, Hongmei Zhang, Shula Chen, Zhihui Chen, Xidong Duan","doi":"10.1021/acs.nanolett.5c01088","DOIUrl":"https://doi.org/10.1021/acs.nanolett.5c01088","url":null,"abstract":"Two-dimensional (2D) antiferromagnetic (AFM) semiconductors have garnered significant attention due to their promising applications in spintronics and intriguing magneto-optical performance. However, low Néel temperatures (<i>T</i><sub>N</sub>) and inadequate air stability constrain their application. Here, we report the synthesis of a 2D semiconducting CuFeS<sub>2</sub> (CFS) exhibiting AFM order. It features a high <i>T</i><sub>N</sub> (473.0 ± 0.4 K) and remains stable in air for at least 2 weeks. The semiconductor characteristics are confirmed via electrical measurements. AFM order and a high magnetic phase transition temperature are demonstrated by Raman and second-harmonic generation (SHG) spectra. This work provides a new 2D AFM semiconductor with a high Néel temperature, offering a novel platform for studying unconventional physical phenomena and spintronics.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"72 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2025-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143736341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}