L. O. Luchnikov, A. A. Zarudnyaa, G. V. Segal, A. S. Ivanova, A. P. Morozov, P. A. Gostishchev, D. S. Saranin
{"title":"Tuning of CsSNi3 Crystal Structure for Thin-film Energy Conversion Devices","authors":"L. O. Luchnikov, A. A. Zarudnyaa, G. V. Segal, A. S. Ivanova, A. P. Morozov, P. A. Gostishchev, D. S. Saranin","doi":"10.1134/S106377452560005X","DOIUrl":"10.1134/S106377452560005X","url":null,"abstract":"<p>Solution-processed CsSnI<sub>3</sub>-based perovskite thin films with partial MA (methyl amine) substitution were fabricated and assessed for structural, morphological, and transport properties both as-prepared and after 48 h of air exposure. X-ray diffraction revealed that MA<sub>0.2</sub>Cs<sub>0.8</sub>SnI<sub>3</sub> retained the black-γ perovskite phase despite morphological changes, whereas CsSnI<sub>3</sub> showed notable decomposition. Device analyses in <i>p</i>–<i>n</i> diode architectures indicated significantly lower dark current and enhanced shunt resistance for MA-modified films. In unipolar <i>p</i>–<i>n</i>–<i>p</i> devices, a slight threshold voltage reduction and stable trap concentrations (10<sup>14</sup> cm<sup>–3</sup>) suggest improved Fermi level pinning and mild doping compensation. Transient photocurrent measurements confirmed negligible capacitive or inductive impacts, underscoring improved inter-grain connectivity and moderated donor-acceptor defects. Overall, partial MA substitution mitigates oxidation-driven phase transitions in CsSnI<sub>3</sub>, offering stable microcrystalline perovskites with reduced leakage currents and superior charge transport–key for advancing tin-based perovskite device performance.</p>","PeriodicalId":527,"journal":{"name":"Crystallography Reports","volume":"69 1 supplement","pages":"S98 - S104"},"PeriodicalIF":0.6,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
N. N. Resnina, S. P. Belyaev, A. I. Bazlov, R. M. Bikbaev, V. D. Kalganov
{"title":"Influence of Rolling and Annealing on the Structure and Properties of the Medium-Entropy Ti40Hf5Zr5Ni40Cu5Co5 Shape Memory Alloys","authors":"N. N. Resnina, S. P. Belyaev, A. I. Bazlov, R. M. Bikbaev, V. D. Kalganov","doi":"10.1134/S106377452460279X","DOIUrl":"10.1134/S106377452460279X","url":null,"abstract":"<p>The influence of the hot rolling and heat treatment on the structure, martensitic transformations, and mechanical behaviour of the medium-entropy Ti<sub>40</sub>Hf<sub>5</sub>Zr<sub>5</sub>Ni<sub>40</sub>Cu<sub>5</sub>Co<sub>5</sub> shape memory alloy has been investigated. The results obtained showed that, after hot rolling at 900°С, the alloy does not undergo martensitic transformations, which is caused by the high dislocation density. Heating to 500°С is accompanied by heat release at temperatures of 257–323°С. The martensitic transformations are restored; however, they are observed in a wide temperature range, which is typical of ultra-fine grain materials. Holding the sample at 500°С for 1 h leads to grain growth; however, the grain size remains less than 1 μm. This circumstance reduces the temperature ranges of martensitic transformations and increases the dislocation yield limit, as compared to the initial state (before hot rolling). Annealing at 700°С for 1 h is accompanied by grain growth to 3.5 μm, which leads to additional decrease in the temperature ranges of the transformations, increase in hysteresis, and decrease in the yield limit for dislocation slip. The strength and strain up to failure increase as compared to the values found in the sample after annealing at 500°С for 1 h.</p>","PeriodicalId":527,"journal":{"name":"Crystallography Reports","volume":"69 1 supplement","pages":"S61 - S65"},"PeriodicalIF":0.6,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. P. Belyaev, V. V. Rubanik, V. V. Rubanik Jr., N. N. Resnina, A. V. Sibirev, R. M. Bikbaev, A. M. Ivanov, I. V. Ponikarova, D. P. Draba
{"title":"Anisotropy in the Mechanical Behaviour of the Low-carbon Steel Wall Produced by Wire Arc Additive Manufacturing without or Under Ultrasonic Assistance","authors":"S. P. Belyaev, V. V. Rubanik, V. V. Rubanik Jr., N. N. Resnina, A. V. Sibirev, R. M. Bikbaev, A. M. Ivanov, I. V. Ponikarova, D. P. Draba","doi":"10.1134/S1063774525600139","DOIUrl":"10.1134/S1063774525600139","url":null,"abstract":"<p>Anisotropy in the mechanical behaviour was studied in steel wall produced by WAAM under or without ultrasonic assistance (UA). Anisotropy of the mechanical behaviour was found in sample produced by WAAM without UA and was not observed in sample manufactured by WAAM under UA. It was assumed that the reason for the anisotropy of the mechanical behaviour in sample produced by the WAAM without UA was the grains formed during the α → γ → α transformation inherited the texture of the columnar grains. Ultrasonic assistance during WAAM decreased the texture of columnar grains, as a result, the mechanical behaviour was more isotropic.</p>","PeriodicalId":527,"journal":{"name":"Crystallography Reports","volume":"69 1 supplement","pages":"S78 - S82"},"PeriodicalIF":0.6,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. S. Eftifeeva, I. D. Fatkullin, E. Yu. Panchenko, E. I. Yanushonite, M. V. Zherdeva, Yu. I. Chumlyakov
{"title":"Orientation Dependence of the Two-Way Shape Memory Effect in Single Crystals of Co35Ni35Al28Fe2 Alloy","authors":"A. S. Eftifeeva, I. D. Fatkullin, E. Yu. Panchenko, E. I. Yanushonite, M. V. Zherdeva, Yu. I. Chumlyakov","doi":"10.1134/S1063774525600073","DOIUrl":"10.1134/S1063774525600073","url":null,"abstract":"<p>The orientation dependence of the two-way shape memory effect (TWSME) in stress-induced martensite aged Co<sub>35</sub>Ni<sub>35</sub>Al<sub>28</sub>Fe<sub>2</sub> (B2 + γ') single crystals has been studied. Aging leads to the stabilization of the oriented L1<sub>0</sub>-martensite, which helps to induce the TWSME. By orientation variation of the single crystal, one can stabilize the twinned or detwinned martensite, which determines the regularities of the TWSME manifestation. In the aged [001] crystals, the twinned L1<sub>0</sub>-martensite variant is stabilized. The TWSME in the [001] crystals develops with a large (−2.4%) reversible strain in the temperature range of 57–60 K and with a narrow (45 K) hysteresis, while the stabilization of the detwinned L1<sub>0</sub>-martensite variant during aging in [110] crystals facilitates the development of a smaller TWSME value (−1.6%) in narrow ranges of 3–9 K, with a wide (79 K) hysteresis.</p>","PeriodicalId":527,"journal":{"name":"Crystallography Reports","volume":"69 1 supplement","pages":"S83 - S88"},"PeriodicalIF":0.6,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Morphological Features of Graphene in Al2O3/G Nanocomposite","authors":"V. V. Stolyarov","doi":"10.1134/S1063774524602880","DOIUrl":"10.1134/S1063774524602880","url":null,"abstract":"<p>The features of the shape and distribution of graphene flakes in the Al<sub>2</sub>O<sub>3</sub>/G nanocomposite based on corundum nanoceramics obtained using spark plasma sintering technology have been studied. Scanning and transmission electron microscopy have shown the diversity of graphene morphology at the boundaries and inside grains, in the form of agglomerates and bridges, oriented and chaotic lamellar structures. It is shown that the addition of graphene leads to the appearance of shear bands in brittle ceramics, indicating intragranular deformation.</p>","PeriodicalId":527,"journal":{"name":"Crystallography Reports","volume":"69 1 supplement","pages":"S23 - S30"},"PeriodicalIF":0.6,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. P. Belyaev, N. N. Resnina, I. V. Ponikarova, V. A. Andreev
{"title":"Influence of the Volume Fraction of the Martensite Formed on Cooling under Stress on the Martensite Stabilization Effect in the NiTi Alloys","authors":"S. P. Belyaev, N. N. Resnina, I. V. Ponikarova, V. A. Andreev","doi":"10.1134/S1063774525600115","DOIUrl":"10.1134/S1063774525600115","url":null,"abstract":"<p>The influence of the volume fraction of the martensite formed on cooling under stress on the martensite stabilization effect was studied in the Ni<sub>50</sub>Ti<sub>50</sub> and Ni<sub>51</sub>Ti<sub>49</sub> shape memory alloys. It was found that an increase in volume fraction of the martensite led to a rise in the martensite stabilization effect value for the <i>A</i><sub><i>f</i></sub> temperature regardless of the stress acting on cooling or chemical composition of the alloy. This was caused by an increase in volume fraction of the martensite increased the probability of the interaction between the martensite crystals that increased the damage of the interfaces.</p>","PeriodicalId":527,"journal":{"name":"Crystallography Reports","volume":"69 1 supplement","pages":"S71 - S77"},"PeriodicalIF":0.6,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. B. Nechushkin, A. I. Ril’, A. V. Timofeev, M. V. Chichkov, M. A. Sitnov, V. V. Kozlov
{"title":"Comparison of Methods for Obtaining Graphene Structures","authors":"S. B. Nechushkin, A. I. Ril’, A. V. Timofeev, M. V. Chichkov, M. A. Sitnov, V. V. Kozlov","doi":"10.1134/S1063774525600152","DOIUrl":"10.1134/S1063774525600152","url":null,"abstract":"<p>Three methods for obtaining graphene structures have been investigated: ultrasonic liquid-phase exfoliation (20–60 min), mechanical treatment in a vibratory cup mill, and Hammer’s method. An ultrasonic processing in a polyacrylonitrile/dimethylformamide solution led to a decrease in the particle size from 25.3 to 9.57 µm; the fraction of (5–20)-µm particles reached 68%, and the fraction of particles smaller than 1 µm was 2.69%. According to the atomic force microscopy data, the layer height reduced from 1.1 µm to 100 nm, and the fraction of large aggregates (>100 µm) decreased from 40 to 10%. Mechanical exfoliation with polyacrylonitrile increased the interlayer spacing to 3.609 Å in comparison with 3.373–3.376 Å, a value obtained by ultrasonic treatment. Hammer’s method demonstrated the best exfoliation (according to the X-ray diffraction and Raman spectroscopy data): <i>I</i><sub><i>D</i></sub>/<i>I</i><sub><i>G</i></sub> = 1, <i>I</i><sub>2<i>D</i></sub>/<i>I</i><sub><i>G</i></sub> = 0.07, <span>({{I}_{{left( {D + D'} right)}}})</span>/<i>I</i><sub><i>G</i></sub> = 0.12. Molecular modeling revealed a decrease in the specific energy of the system from 351.68 to 200.21 J/g with an increase in the C : O ratio from 38 : 1 to 111 : 1, reaching a minimum of 10.780 J/g for pure graphene.</p>","PeriodicalId":527,"journal":{"name":"Crystallography Reports","volume":"69 1 supplement","pages":"S31 - S37"},"PeriodicalIF":0.6,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Yu. Chernoglazov, E. V. Khramov, A. V. Sitnikov, V. A. Demin, V. V. Rylkov, M. V. Kovalchuk
{"title":"Effect of CoFe and Co‒Fe‒B Metal Nanogranules in Composite Memristors Based on the LiNbO3 Matrix on Its Structural Features","authors":"K. Yu. Chernoglazov, E. V. Khramov, A. V. Sitnikov, V. A. Demin, V. V. Rylkov, M. V. Kovalchuk","doi":"10.1134/S1063774524603009","DOIUrl":"10.1134/S1063774524603009","url":null,"abstract":"<p>The structural features of an insulating Li‒Nb‒O film and (Co–Fe–B)<sub><i>х</i></sub>(LiNbO<span>(_{{3-y}})</span>)<span>(_{{100-x}})</span> and (Co–Fe)<sub><i>х</i></sub>(LiNbO<span>(_{{3-y}})</span>)<span>(_{{100-x}})</span> (<i>x</i> ≈ 15–30 at %) nanocomposite samples obtained by ion-beam sputtering of a polycrystalline LiNbO<sub>3</sub> target and Co<sub>40</sub>Fe<sub>40</sub>B<sub>20</sub>–LiNbO<sub>3</sub> and CoFe–LiNbO<sub>3</sub> composite targets, respectively, onto polyimide substrates have been subjected to the Nb <i>K</i>-edge X-ray absorption near-edge spectroscopy (XANES) comparative analysis. It is shown that the structure of local bonds of Nb atoms in the film samples is noticeably different from those in crystalline LiNbO<sub>3</sub>: the Nb–Nb distance shifts by ~0.9 Å towards lower values, indicating partial reduction of Nb in the form of nanoparticles and the multiphase nature of the system. In the (Co–Fe)<sub><i>х</i></sub>(LiNbO<span>(_{{3-y}})</span>)<span>(_{{100-x}})</span> sample, the environment (bonds) of Nb atoms is independent of <i>x</i>; the insulating matrix has in this case a structure most similar to LiNbO<sub>3</sub>. Meanwhile, in the (Co–Fe–B)<sub><i>х</i></sub>(LiNbO<span>(_{{3-y}})</span>)<span>(_{{100-x}})</span> sample, consistent changes in the XANES spectra have been observed with increasing <i>х</i>, which indicates a significant local restructuring in the sample. The structural features of the samples have been explained by the catalytic effect of the metallic phase of the nanocomposite on the formation of the insulating matrix during its growth.</p>","PeriodicalId":527,"journal":{"name":"Crystallography Reports","volume":"69 1 supplement","pages":"S17 - S22"},"PeriodicalIF":0.6,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Sh. Asvarov, A. K. Akhmedov, P. L. Podkur, V. M. Kanevsky
{"title":"Spark Plasma Sintering of SiC: Influence of TiC Additive","authors":"A. Sh. Asvarov, A. K. Akhmedov, P. L. Podkur, V. M. Kanevsky","doi":"10.1134/S106377452460248X","DOIUrl":"10.1134/S106377452460248X","url":null,"abstract":"<p>The compaction kinetics, phase composition and mechanical characteristics of pure SiC and pure TiC ceramics, as well as SiC–TiC composite ceramics, obtained by spark plasma sintering (SPS), were studied depending on the component content and SPS-modes. It was found that at a fixed pressing pressure (<i>P</i><sub>SPS</sub> = 45 MPa) in a given range of temperatures and sintering times (1800 ≤ <i>T</i><sub>SPS</sub> ≤ 2000°C and 0 min ≤ <i>t</i><sub>SPS</sub> ≤ 10 min), the relative density of sintered ceramics increases with increasing temperature and sintering time and reaches maximum values of 88, 99.9, and 96.2 of the calculated value for SiC, TiC, and SiC + TiC(10 wt %), respectively. It is shown that sintering of composite ceramics in the SiC–TiC system occurs through the formation and subsequent high-temperature decomposition of intermediate phases of binary carbides. It is demonstrated that the microhardness of SiC–TiC composite samples is determined as an additive value between the hardnesses of the included phases SiC (<i>HV</i> = 2948 ± 238 N/mm<sup>2</sup>) and TiC (<i>HV</i> = 2465 ± 256 N/mm<sup>2</sup>).</p>","PeriodicalId":527,"journal":{"name":"Crystallography Reports","volume":"69 6","pages":"950 - 954"},"PeriodicalIF":0.6,"publicationDate":"2025-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143423375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. V. Drozd, V. A. Dmitriev, I. E. Gabis, V. A. Moshnikov, A. P. Baraban
{"title":"Features of the Ga2O3 Layers Synthesized on Silicon by Molecular Layering","authors":"A. V. Drozd, V. A. Dmitriev, I. E. Gabis, V. A. Moshnikov, A. P. Baraban","doi":"10.1134/S1063774524602107","DOIUrl":"10.1134/S1063774524602107","url":null,"abstract":"<p>The possibility of synthesizing gallium oxide semiconductor layers by the classical thermal method of molecular layering with trimethyl gallium and ozone precursors and controlling the electrical properties of the synthesized layers is shown. Homogeneous layers of specified thickness have been deposited in a single cycle onto a silicon substrate, monocrystalline quartz, and high-aspect-ratio 3D substrates in the form of microchannel plates. The synthesized gallium oxide layers are amorphous, conforming to the Ga<sub>2</sub>O<sub>3</sub> stoichiometry; have a band gap of 4.9 ± 0.2 eV; and do not exhibit the impurity conductivity. The possibility of obtaining gallium oxide films with the impurity conductivity by molecular layering according to a specified program, with alternation of the chemical composition of the precursors used, is demonstrated.</p>","PeriodicalId":527,"journal":{"name":"Crystallography Reports","volume":"69 7","pages":"1138 - 1143"},"PeriodicalIF":0.6,"publicationDate":"2025-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143423380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}