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My Story [Women in Electron Devices] 我的故事 [电子器件领域的女性］
IEEE Electron Devices Magazine Pub Date : 2024-03-01 DOI: 10.1109/med.2024.3372173
Mukta Farooq
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引用次数: 0
Electron Devices: Celebrating the Past, Illuminating the Future [President’s Column] 电子器件：庆祝过去，照亮未来 [主席专栏］
IEEE Electron Devices Magazine Pub Date : 2024-03-01 DOI: 10.1109/med.2024.3369211
Bin Zhao
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引用次数: 0
IEEE Electron Device Society Awards 电气和电子工程师学会电子器件协会奖
IEEE Electron Devices Magazine Pub Date : 2024-03-01 DOI: 10.1109/med.2024.3372673
{"title":"IEEE Electron Device Society Awards","authors":"","doi":"10.1109/med.2024.3372673","DOIUrl":"https://doi.org/10.1109/med.2024.3372673","url":null,"abstract":"","PeriodicalId":491767,"journal":{"name":"IEEE Electron Devices Magazine","volume":"329 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140402296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
What It Takes to Be a Great Mentor [Educator’s Desk] 成为优秀导师的必备条件 [教育工作者书桌]
IEEE Electron Devices Magazine Pub Date : 2024-03-01 DOI: 10.1109/med.2024.3364540
John D. Cressler
{"title":"What It Takes to Be a Great Mentor [Educator’s Desk]","authors":"John D. Cressler","doi":"10.1109/med.2024.3364540","DOIUrl":"https://doi.org/10.1109/med.2024.3364540","url":null,"abstract":"Some thoughts on what it takes to be a great mentor.","PeriodicalId":491767,"journal":{"name":"IEEE Electron Devices Magazine","volume":"181 3","pages":"46-47"},"PeriodicalIF":0.0,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140405068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Your IEEE Technical Profile 您的 IEEE 技术简介
IEEE Electron Devices Magazine Pub Date : 2024-03-01 DOI: 10.1109/med.2024.3377875
{"title":"Your IEEE Technical Profile","authors":"","doi":"10.1109/med.2024.3377875","DOIUrl":"https://doi.org/10.1109/med.2024.3377875","url":null,"abstract":"","PeriodicalId":491767,"journal":{"name":"IEEE Electron Devices Magazine","volume":"39 7","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140399568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Patterning Infrastructure Development for Advanced EUV Lithography: Continuing Dimensional Scaling Through EUV Lithography to Support Moore’s Law 为先进的 EUV 光刻技术开发图形化基础设施：通过超紫外光刻技术继续扩大尺寸，支持摩尔定律
IEEE Electron Devices Magazine Pub Date : 2024-03-01 DOI: 10.1109/MED.2023.3336276
K. Ronse
{"title":"Patterning Infrastructure Development for Advanced EUV Lithography: Continuing Dimensional Scaling Through EUV Lithography to Support Moore’s Law","authors":"K. Ronse","doi":"10.1109/MED.2023.3336276","DOIUrl":"https://doi.org/10.1109/MED.2023.3336276","url":null,"abstract":"EUV lithography is currently the state-of-the-art lithography technology that is used for printing the most critical layers in advanced logic and DRAM chips. It uses a 13.5-nm wavelength, and the projection optics have a numerical aperture (NA) of 0.33. EUV has taken over from 193-nm immersion lithography where more and more multiple patterning steps were needed to print these critical layers, resulting in a higher cost, longer turnaround time (TAT), and reduced yield. The newest developments in EUV lithography are to further push the resolution by building a higher NA lens. For that, ASML and Zeiss are developing a new scanner <xref ref-type=\"bibr\" rid=\"ref1\">[1]</xref> and new 0.55-NA optics <xref ref-type=\"bibr\" rid=\"ref2\">[2]</xref>.","PeriodicalId":491767,"journal":{"name":"IEEE Electron Devices Magazine","volume":"24 2","pages":"35-44"},"PeriodicalIF":0.0,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140405404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Electron Devices Magazine 电气和电子工程师学会电子器件杂志
IEEE Electron Devices Magazine Pub Date : 2024-03-01 DOI: 10.1109/med.2024.3372667
{"title":"IEEE Electron Devices Magazine","authors":"","doi":"10.1109/med.2024.3372667","DOIUrl":"https://doi.org/10.1109/med.2024.3372667","url":null,"abstract":"","PeriodicalId":491767,"journal":{"name":"IEEE Electron Devices Magazine","volume":"21 8","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140401495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Let’s Go for Volume 2! [From the Editor’s Desk] 为第二卷加油[编者的话]
IEEE Electron Devices Magazine Pub Date : 2024-03-01 DOI: 10.1109/med.2024.3372348
J. Burghartz
{"title":"Let’s Go for Volume 2! [From the Editor’s Desk]","authors":"J. Burghartz","doi":"10.1109/med.2024.3372348","DOIUrl":"https://doi.org/10.1109/med.2024.3372348","url":null,"abstract":"","PeriodicalId":491767,"journal":{"name":"IEEE Electron Devices Magazine","volume":"64 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140403871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Evolvement of Lithography Optics Towards Advanced EUV Lithography: Enabling the Continuation of Moore’s Law for Six Decades 光刻光学技术向先进的超紫外光刻发展：让摩尔定律延续六十年
IEEE Electron Devices Magazine Pub Date : 2024-03-01 DOI: 10.1109/MED.2023.3343627
Winfried Kaiser
{"title":"The Evolvement of Lithography Optics Towards Advanced EUV Lithography: Enabling the Continuation of Moore’s Law for Six Decades","authors":"Winfried Kaiser","doi":"10.1109/MED.2023.3343627","DOIUrl":"https://doi.org/10.1109/MED.2023.3343627","url":null,"abstract":"EUV is currently the state-of-the-art lithography technology used to print the most critical layers of ICs, specifically of advanced logic and DRAM. It represents the highest achievement in the industry after decades of development of optical lithography.","PeriodicalId":491767,"journal":{"name":"IEEE Electron Devices Magazine","volume":"17 1","pages":"23-34"},"PeriodicalIF":0.0,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140405442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
IEEE App IEEE 应用程序
IEEE Electron Devices Magazine Pub Date : 2024-03-01 DOI: 10.1109/med.2024.3374509
{"title":"IEEE App","authors":"","doi":"10.1109/med.2024.3374509","DOIUrl":"https://doi.org/10.1109/med.2024.3374509","url":null,"abstract":"","PeriodicalId":491767,"journal":{"name":"IEEE Electron Devices Magazine","volume":"44 3","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140407564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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