为先进的 EUV 光刻技术开发图形化基础设施:通过超紫外光刻技术继续扩大尺寸,支持摩尔定律

K. Ronse
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引用次数: 0

摘要

EUV 光刻技术是目前最先进的光刻技术,用于印刷先进逻辑芯片和 DRAM 芯片中最关键的层。它使用 13.5 纳米波长,投影光学器件的数值孔径(NA)为 0.33。193 纳米浸入式光刻需要越来越多的多重图案化步骤来印刷这些关键层,导致成本增加、周转时间(TAT)延长和成品率降低,而 EUV 取代了 193 纳米浸入式光刻。EUV 光刻技术的最新发展是通过制造更高的 NA 透镜来进一步提高分辨率。为此,ASML 和蔡司正在开发新的扫描仪[1]和新的 0.55-NA 光学镜片[2]。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Patterning Infrastructure Development for Advanced EUV Lithography: Continuing Dimensional Scaling Through EUV Lithography to Support Moore’s Law
EUV lithography is currently the state-of-the-art lithography technology that is used for printing the most critical layers in advanced logic and DRAM chips. It uses a 13.5-nm wavelength, and the projection optics have a numerical aperture (NA) of 0.33. EUV has taken over from 193-nm immersion lithography where more and more multiple patterning steps were needed to print these critical layers, resulting in a higher cost, longer turnaround time (TAT), and reduced yield. The newest developments in EUV lithography are to further push the resolution by building a higher NA lens. For that, ASML and Zeiss are developing a new scanner [1] and new 0.55-NA optics [2].
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