{"title":"为先进的 EUV 光刻技术开发图形化基础设施:通过超紫外光刻技术继续扩大尺寸,支持摩尔定律","authors":"K. Ronse","doi":"10.1109/MED.2023.3336276","DOIUrl":null,"url":null,"abstract":"EUV lithography is currently the state-of-the-art lithography technology that is used for printing the most critical layers in advanced logic and DRAM chips. It uses a 13.5-nm wavelength, and the projection optics have a numerical aperture (NA) of 0.33. EUV has taken over from 193-nm immersion lithography where more and more multiple patterning steps were needed to print these critical layers, resulting in a higher cost, longer turnaround time (TAT), and reduced yield. The newest developments in EUV lithography are to further push the resolution by building a higher NA lens. For that, ASML and Zeiss are developing a new scanner <xref ref-type=\"bibr\" rid=\"ref1\">[1]</xref> and new 0.55-NA optics <xref ref-type=\"bibr\" rid=\"ref2\">[2]</xref>.","PeriodicalId":491767,"journal":{"name":"IEEE Electron Devices Magazine","volume":"24 2","pages":"35-44"},"PeriodicalIF":0.0000,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Patterning Infrastructure Development for Advanced EUV Lithography: Continuing Dimensional Scaling Through EUV Lithography to Support Moore’s Law\",\"authors\":\"K. Ronse\",\"doi\":\"10.1109/MED.2023.3336276\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"EUV lithography is currently the state-of-the-art lithography technology that is used for printing the most critical layers in advanced logic and DRAM chips. It uses a 13.5-nm wavelength, and the projection optics have a numerical aperture (NA) of 0.33. EUV has taken over from 193-nm immersion lithography where more and more multiple patterning steps were needed to print these critical layers, resulting in a higher cost, longer turnaround time (TAT), and reduced yield. The newest developments in EUV lithography are to further push the resolution by building a higher NA lens. For that, ASML and Zeiss are developing a new scanner <xref ref-type=\\\"bibr\\\" rid=\\\"ref1\\\">[1]</xref> and new 0.55-NA optics <xref ref-type=\\\"bibr\\\" rid=\\\"ref2\\\">[2]</xref>.\",\"PeriodicalId\":491767,\"journal\":{\"name\":\"IEEE Electron Devices Magazine\",\"volume\":\"24 2\",\"pages\":\"35-44\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Electron Devices Magazine\",\"FirstCategoryId\":\"0\",\"ListUrlMain\":\"https://doi.org/10.1109/MED.2023.3336276\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Devices Magazine","FirstCategoryId":"0","ListUrlMain":"https://doi.org/10.1109/MED.2023.3336276","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
EUV 光刻技术是目前最先进的光刻技术,用于印刷先进逻辑芯片和 DRAM 芯片中最关键的层。它使用 13.5 纳米波长,投影光学器件的数值孔径(NA)为 0.33。193 纳米浸入式光刻需要越来越多的多重图案化步骤来印刷这些关键层,导致成本增加、周转时间(TAT)延长和成品率降低,而 EUV 取代了 193 纳米浸入式光刻。EUV 光刻技术的最新发展是通过制造更高的 NA 透镜来进一步提高分辨率。为此,ASML 和蔡司正在开发新的扫描仪[1]和新的 0.55-NA 光学镜片[2]。
Patterning Infrastructure Development for Advanced EUV Lithography: Continuing Dimensional Scaling Through EUV Lithography to Support Moore’s Law
EUV lithography is currently the state-of-the-art lithography technology that is used for printing the most critical layers in advanced logic and DRAM chips. It uses a 13.5-nm wavelength, and the projection optics have a numerical aperture (NA) of 0.33. EUV has taken over from 193-nm immersion lithography where more and more multiple patterning steps were needed to print these critical layers, resulting in a higher cost, longer turnaround time (TAT), and reduced yield. The newest developments in EUV lithography are to further push the resolution by building a higher NA lens. For that, ASML and Zeiss are developing a new scanner [1] and new 0.55-NA optics [2].