Monte Carlo Methods and Applications最新文献_第6页

Carathéodory approximate solutions for a class of stochastic differential equations involving the local time at point zero with one-sided Lipschitz continuous drift coefficients 一类具有单侧Lipschitz连续漂移系数的局部时间为0点的随机微分方程的carathacimodory近似解

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Monte Carlo Methods and Applications Pub Date : 2022-02-15 DOI: 10.1515/mcma-2022-2107

Kamal Hiderah

引用次数: 1

A study of highly efficient stochastic sequences for multidimensional sensitivity analysis 用于多维灵敏度分析的高效随机序列研究

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Monte Carlo Methods and Applications Pub Date : 2022-02-15 DOI: 10.1515/mcma-2022-2101

I. Dimov, V. Todorov, K. Sabelfeld

引用次数: 10

Estimation of steady-state quantities of an HMM with some rarely generated emissions 具有少量排放的HMM稳态量的估计

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Monte Carlo Methods and Applications Pub Date : 2022-02-15 DOI: 10.1515/mcma-2022-2103

Az-eddine Zakrad, A. Nasroallah

引用次数: 0

Monte Carlo and Quasi-Monte Carlo Methods - MCQMC 2020, Oxford, United Kingdom, August 10-14 蒙特卡罗和准蒙特卡罗方法- MCQMC 2020，牛津，英国，8月10-14日

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Monte Carlo Methods and Applications Pub Date : 2022-01-01 DOI: 10.1007/978-3-030-98319-2

引用次数: 0

A stochastic model, simulation, and application to aggregation of cadmium sulfide nanocrystals upon evaporation of the Langmuir–Blodgett matrix Langmuir-Blodgett矩阵蒸发时硫化镉纳米晶体聚集的随机模型、模拟和应用

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Monte Carlo Methods and Applications Pub Date : 2021-11-06 DOI: 10.1515/mcma-2021-2100

K. Svit, K. Zhuravlev, S. Kireev, K. Sabelfeld

{"title":"A stochastic model, simulation, and application to aggregation of cadmium sulfide nanocrystals upon evaporation of the Langmuir–Blodgett matrix","authors":"K. Svit, K. Zhuravlev, S. Kireev, K. Sabelfeld","doi":"10.1515/mcma-2021-2100","DOIUrl":"https://doi.org/10.1515/mcma-2021-2100","url":null,"abstract":"Abstract A stochastic model of nanocrystals clusters formation is developed and applied to simulate an aggregation of cadmium sulfide nanocrystals upon evaporation of the Langmuir–Blodgett matrix. Simulations are compared with our experimental results. The stochastic model suggested governs mobilities both of individual nanocrystals and its clusters (arrays). We give a comprehensive analysis of the patterns simulated by the model, and study an influence of the surrounding medium (solvent) on the aggregation processes. In our model, monomers have a finite probability of separation from the cluster which depends on the temperature and binding energy between nanocrystals, and can also be redistributed in the composition of the cluster, leading to its compaction. The simulation results obtained in this work are compared with the experimental data on the aggregation of CdS nanocrystals upon evaporation of the Langmuir–Blodgett matrix. This system is a typical example from real life and is noteworthy in that the morphology of nanocrystals after evaporation of the matrix cannot be described exactly by a model based only on the motion of individual nanocrystals or by a cluster-cluster aggregation model.","PeriodicalId":46576,"journal":{"name":"Monte Carlo Methods and Applications","volume":"27 1","pages":"289 - 299"},"PeriodicalIF":0.9,"publicationDate":"2021-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42146536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Random walk on spheres algorithm for solving steady-state and transient diffusion-recombination problems 求解稳态和瞬态扩散复合问题的球上随机游走算法

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Monte Carlo Methods and Applications Pub Date : 2021-11-04 DOI: 10.1515/mcma-2021-2099

I. Shalimova, K. Sabelfeld

{"title":"Random walk on spheres algorithm for solving steady-state and transient diffusion-recombination problems","authors":"I. Shalimova, K. Sabelfeld","doi":"10.1515/mcma-2021-2099","DOIUrl":"https://doi.org/10.1515/mcma-2021-2099","url":null,"abstract":"Abstract We further develop in this study the Random Walk on Spheres (RWS) stochastic algorithm for solving systems of coupled diffusion-recombination equations first suggested in our recent article [K. Sabelfeld, First passage Monte Carlo algorithms for solving coupled systems of diffusion–reaction equations, Appl. Math. Lett. 88 2019, 141–148]. The random walk on spheres process mimics the isotropic diffusion of two types of particles which may recombine to each other. Our motivation comes from the transport problems of free and bound exciton recombination. The algorithm is based on tracking the trajectories of the diffusing particles exactly in accordance with the probabilistic distributions derived from the explicit representation of the relevant Green functions for balls and spheres. Therefore, the method is mesh free both in space and time. In this paper we implement the RWS algorithm for solving the diffusion-recombination problems both in a steady-state and transient settings. Simulations are compared against the exact solutions. We show also how the RWS algorithm can be applied to calculate exciton flux to the boundary which provides the electron beam-induced current, the concentration of the survived excitons, and the cathodoluminescence intensity which are all integral characteristics of the solution to diffusion-recombination problem.","PeriodicalId":46576,"journal":{"name":"Monte Carlo Methods and Applications","volume":"27 1","pages":"301 - 313"},"PeriodicalIF":0.9,"publicationDate":"2021-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41886676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

A diffusion Monte Carlo method for charge density on a conducting surface at non-constant potentials 非恒定电位下导电表面电荷密度的扩散蒙特卡罗方法

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Monte Carlo Methods and Applications Pub Date : 2021-10-28 DOI: 10.1515/mcma-2021-2098

U. Yu, Hoseung Jang, Chi‐Ok Hwang

引用次数: 2

Global sensitivity analysis of statistical models by double randomization method 双随机化统计模型的全局敏感性分析

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Monte Carlo Methods and Applications Pub Date : 2021-10-27 DOI: 10.1515/mcma-2021-2096

D. Kolyukhin

引用次数: 1

A global random walk on grid algorithm for second order elliptic equations 二阶椭圆方程的网格上全局随机游走算法

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Monte Carlo Methods and Applications Pub Date : 2021-10-27 DOI: 10.1515/mcma-2021-2097

K. Sabelfeld, D. Smirnov, I. Dimov, V. Todorov

引用次数: 2

3D sputtering simulations of the CZTS, Si and CIGS thin films using Monte-Carlo method 用蒙特卡罗方法模拟CZTS、Si和CIGS薄膜的三维溅射

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Monte Carlo Methods and Applications Pub Date : 2021-10-21 DOI: 10.1515/mcma-2021-2094

Salah Eddine Chouaib Refas, Abdelkader Bouazza, Y. Belhadji

{"title":"3D sputtering simulations of the CZTS, Si and CIGS thin films using Monte-Carlo method","authors":"Salah Eddine Chouaib Refas, Abdelkader Bouazza, Y. Belhadji","doi":"10.1515/mcma-2021-2094","DOIUrl":"https://doi.org/10.1515/mcma-2021-2094","url":null,"abstract":"Abstract The future of the industry development depends greatly on the permanently ensured energy needs and can be achieved only through the use of a variety of sustainable energy sources where the solar energy, which gains its optimal exploitation directly by linking it to the properties of solar cells and in particular to the crystallographic quality of the used semiconductor substrates, is one of them. Many growth processes are used to obtain a high quality of semiconductor formation and deposition, among them the DC sputtering. In this work, based on the Monte-Carlo method, a 3D DC sputtering simulation of the CZTS {mathrm{CZTS}} , Si {mathrm{Si}} and CIGS {mathrm{CIGS}} semiconductors thin film formation is proposed by considering Argon as vacuum chamber bombardment gas. We extrapolate firstly the best sputtering yield possible of the semiconductors CZTS {mathrm{CZTS}} and Silicon represented by their chemical formulas Cu 2 ⁢ ZnSnS 4 {mathrm{Cu}_{2}mathrm{Zn}mathrm{Sn}mathrm{S}_{4}} and Si {mathrm{Si}} , respectively, by the application of different energies and incidence angles. From the obtained results, firstly we deduce that the best sputtering angle is 85 ∘ {85^{circ}} ; in the same time, CZTS {mathrm{CZTS}} is more efficient comparing to the Si {mathrm{Si}} . Secondly, with the application of this angle ( 85 ∘ {85^{circ}} ) in the sputtering process for the CZTS {mathrm{CZTS}} ( Cu 2 ⁢ ZnSnS 4 {mathrm{Cu}_{2}mathrm{Zn}mathrm{Sn}mathrm{S}_{4}} ) and CIGS {mathrm{CIGS}} represented by its chemical formula CuIn x ⁢ Ga ( 1 - x ) ⁢ Se 2 {mathrm{Cu}mathrm{In}_{x}mathrm{Ga}_{(1-x)}mathrm{Se}_{2}} , and the variation of the bombardment energy in order to find the total ejected atoms from each element of these two materials, we deduce that the sulfide ( S 4 {mathrm{S}_{4}} ) and selenide ( Se 2 {mathrm{Se}_{2}} ) elements give the majority of the sputtering yield amount obtained.","PeriodicalId":46576,"journal":{"name":"Monte Carlo Methods and Applications","volume":"27 1","pages":"373 - 382"},"PeriodicalIF":0.9,"publicationDate":"2021-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44536904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4