2009 13th International Workshop on Computational Electronics最新文献_第7页

Modeling of Junction Temperature and Current Flow in High Power InGaN/GaN Light Emission Diodes Using Finite Element Methods 用有限元方法模拟大功率InGaN/GaN发光二极管结温和电流流动

2009 13th International Workshop on Computational Electronics Pub Date : 2009-05-27 DOI: 10.1109/IWCE.2009.5091121

Chi-kang Li, Yuh‐Renn Wu, Jasprit Singh

{"title":"Modeling of Junction Temperature and Current Flow in High Power InGaN/GaN Light Emission Diodes Using Finite Element Methods","authors":"Chi-kang Li, Yuh‐Renn Wu, Jasprit Singh","doi":"10.1109/IWCE.2009.5091121","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091121","url":null,"abstract":"InGaN/GaN LEDs offer important lighting devices for human livings. These devices have high efficiency and lifetimes at low injection power but so far show degradation under high injection conditions. Current spreading and heat dissipation are key reasons for degradation under high power operation. In this paper, we have developed a three-dimensional (3-D) finite element method (FEM) to examine the heat generation and dissipation and a two-dimensional (2D) Finite element Poisson and drift-diffusion solver for the analysis of current spreading. As we know, the junction temperature plays an important role to the performance of the LED, and it will influence the optical performance. Therefore, the discussion of different surface current density and sapphire width will be considered in this paper. We examine how current flow can be altered by careful design of the LEDs. Results for a conventional LED and an LED with ion-implantation to improve current flow are presented. Our simulations show that improved device design based on modifying current flow paths can improve the device operation.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121681074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Multiscale-Multiphysics Simulation of Nanostructured Devices: the TiberCAD Project 纳米结构器件的多尺度多物理场模拟:TiberCAD项目

2009 13th International Workshop on Computational Electronics Pub Date : 2009-05-27 DOI: 10.1109/IWCE.2009.5091126

M. Auf der Maur, M. Povolotskyi, F. Sacconi, G. Romano, G. Penazzi, A. Pecchia, A. Di Carlo

{"title":"Multiscale-Multiphysics Simulation of Nanostructured Devices: the TiberCAD Project","authors":"M. Auf der Maur, M. Povolotskyi, F. Sacconi, G. Romano, G. Penazzi, A. Pecchia, A. Di Carlo","doi":"10.1109/IWCE.2009.5091126","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091126","url":null,"abstract":"The TIBERCAD project [1] is aimed at the implementation of a device simulator which captures the most important physical concepts encountered in present and emerging electronic and optoelectronic devices. On the one hand the down-scaling of device dimensions requires the inclusion of more advanced quantum mechanical concepts which go beyond classical transport theories. On the other hand, functionality of new emerging devices is based both on electrons/holes, and other quasi-particles such as excitons, polaritons, etc. Usually the active part of a device which needs a more elaborate and careful treatment is small compared to the overall simulation domain. The computational cost of the more accurate model however forbids its application to the whole domain, especially when using atomistic approaches. TIBERCAD implements the following physical models: (a) A structural model that allows to calculate strain and shape deformation of lattice mismatched heterostructures based on linear elasticity theory of solids, assuming pseudomorphic interfaces between different materials [2]. External mechanical forces can be included in the simulation. (b) Quantum-mechanical models to calculate eigenstates of confined particles based on the envelope function approximation including single-band and multiband k . p approach. We solve a stationary Schrodinger equation and obtain energy spectrum, particle density and probabilities of optical transitions [3]. (c) Semi-classical transport models that consider electrons, holes and excitons. Transport is treated in the drift-diffusion approximation. The electrochemical potentials are used as dependent variables such that the particle flux is equal to the gradient of a driving potential multiplied by a particle conductivity: φ","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125599817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dye Solar Cell Simulations Using Finite Element Method 用有限元法模拟染料太阳能电池

2009 13th International Workshop on Computational Electronics Pub Date : 2009-05-27 DOI: 10.1109/IWCE.2009.5091107

A. Gagliardi, M. Auf der Maur, A. Pecchia, A. Di Carlo

引用次数: 2

A Monte Carlo Study of Ambipolar Schottky Barrier MOSFETs 双极肖特基势垒mosfet的蒙特卡罗研究

2009 13th International Workshop on Computational Electronics Pub Date : 2009-05-27 DOI: 10.1109/IWCE.2009.5091081

L. Zeng, Xiao Yan Liu, G. Du, J. Kang, R. Han

引用次数: 0

Stable Position of B12 Cluster Near Si (001) Surface and Its STM Images Si(001)表面附近B12簇的稳定位置及其STM图像

2009 13th International Workshop on Computational Electronics Pub Date : 2009-05-27 DOI: 10.1149/1.3487557

S. Ito, T. Maruizumi, Y. Suwa

引用次数: 1

Simulation of Mobility Variation and Drift Velocity Enhancement Due to Uniaxial Stress Combined with Biaxial Strain in Si PMOS Si PMOS中单轴应力与双轴应变联合作用下迁移率变化与漂移速度增强的模拟

2009 13th International Workshop on Computational Electronics Pub Date : 2009-05-27 DOI: 10.1109/IWCE.2009.5091150

A. Pham, C. Jungemann, B. Meinerzhagen

引用次数: 2

Development of Coupled Thermo-Electrical-Mechanical Models for Studying Degradation of AlGaN/GaN HFETs 研究AlGaN/GaN hfet降解的热电-力学耦合模型的建立

2009 13th International Workshop on Computational Electronics Pub Date : 2009-05-27 DOI: 10.1109/IWCE.2009.5091102

Jing Zhang, S. Patil

引用次数: 0

A Global EMC-FDTD Simulation Tool for High-Frequency Carrier Transport in Semiconductors 半导体高频载流子输运的全局EMC-FDTD仿真工具

2009 13th International Workshop on Computational Electronics Pub Date : 2009-05-27 DOI: 10.1109/IWCE.2009.5091080

K. Willis, S. Hagness, I. Knezevic

引用次数: 4

Modeling of Low Concentrated Buffer DNA Detection with Suspend Gate Field-Effect Transistors (SGFET) 悬浮门场效应晶体管(SGFET)低浓度缓冲DNA检测建模

2009 13th International Workshop on Computational Electronics Pub Date : 2009-05-27 DOI: 10.1109/IWCE.2009.5091122

T. Windbacher, V. Sverdlov, S. Selberherr

{"title":"Modeling of Low Concentrated Buffer DNA Detection with Suspend Gate Field-Effect Transistors (SGFET)","authors":"T. Windbacher, V. Sverdlov, S. Selberherr","doi":"10.1109/IWCE.2009.5091122","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091122","url":null,"abstract":"The experimental data of a suspend gate field-effect transistor (SGFET) have been analyzed with three different models. A SGFET is a MOSFET with an elevated gate and an empty space below it. The exposed gate-oxide layer is biofunc- tionalized with single stranded DNA, which is able to hybridize with a complementary strand. Due to the intrinsic charge of the phosphate groups (minus one elementary charge per group) of the DNA, large shifts in the transfer characteristics are induced. Thus label-free, time-resolved, and in-situ detection of DNA is possible. It can be shown that for buffer concentrations below mmol/l the Poisson-Boltzmann description it is not valid any- more. Because of the low number of counter ions at small buffer concentrations, the screening of the oligo-deoxynucleotides/DNA is more appropriately described with the Debye-H ¨ uckel model. Additionally we propose an extended Poisson-Boltzmann model which takes the closest possible ion distance to the oxide surface into account, and we compare the analytical soultion of this model with the Poisson-Boltzmann and the Debye-H ¨ uckel model.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123694143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Wigner Monte Carlo Simulation of CNTFET: Comparison Between Semi-Classical and Quantum Transport CNTFET的Wigner Monte Carlo模拟:半经典输运与量子输运的比较

2009 13th International Workshop on Computational Electronics Pub Date : 2009-05-27 DOI: 10.1109/IWCE.2009.5091161

Huu-Nha Nguyen, D. Querlioz, S. Galdin-Retailleau, A. Bournel, P. Dollfus

引用次数: 1