发布求助
文献互助 智能选刊 最新文献

2009 13th International Workshop on Computational Electronics最新文献

筛选
英文 中文
Non-Equilibrium Green's Function Calculation of Optical Absorption in Nano Optoelectronic Devices 纳米光电器件光吸收的非平衡格林函数计算
2009 13th International Workshop on Computational Electronics Pub Date : 2009-05-27 DOI: 10.1109/IWCE.2009.5091128
O. Kurniawan, P. Bai, E. Li
{"title":"Non-Equilibrium Green's Function Calculation of Optical Absorption in Nano Optoelectronic Devices","authors":"O. Kurniawan, P. Bai, E. Li","doi":"10.1109/IWCE.2009.5091128","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091128","url":null,"abstract":"The high speed of optical devices motivates the integration between electronics and photonics. One of the most common optoelectronic devices used for such integration is a photodetector. This paper describes the formulation of an optical absorption inside a photodetector using the non-equilibrium Green's function (NEGF) framework. To illustrate the use of the formulation, optical properties of a double barrier quantum well photodetector are simulated. The photocurrent and the spectral response of the photodetector are calculated and presented. We also study the effect of varying various bias voltage and introducing non-uniformity in the effective mass. It is found that the peak locations do not change significantly under these variations.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126475272","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Dissipative Quantum Transport using the Pauli Master Equation 利用泡利主方程的耗散量子输运
2009 13th International Workshop on Computational Electronics Pub Date : 2009-05-27 DOI: 10.1109/IWCE.2009.5091106
Bo Fu, M. Fischetti
{"title":"Dissipative Quantum Transport using the Pauli Master Equation","authors":"Bo Fu, M. Fischetti","doi":"10.1109/IWCE.2009.5091106","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091106","url":null,"abstract":"On the way to develop a complete full-band quantum transport simulation using the Pauli Master Equation, we show our present results on ID n-i-n resistors, ID double barrier resonant tunneling diodes (DBRTD), and 2D double-gate field effect transistors (DGFETs) using a simplified parabolic, spherical effective-mass band-structure model accounting for nonpolar scattering with acoustic (elastic) and optical (inelastic) silicon-like phonons. We also consider the effect of point-like dopants on the access resistance of thin-body double gate devices.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116542041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Bias Induced Strain Effects, Short-Range Electron - Electron Interactions and Quantum Effects in AlGaN/GaN HEMTs 偏置诱导应变效应，近程电子-电子相互作用和量子效应在AlGaN/GaN hemt
2009 13th International Workshop on Computational Electronics Pub Date : 2009-05-27 DOI: 10.1109/IWCE.2009.5091087
A. Ashok, D. Vasileska, S. Goodnick, O. Hartin
{"title":"Bias Induced Strain Effects, Short-Range Electron - Electron Interactions and Quantum Effects in AlGaN/GaN HEMTs","authors":"A. Ashok, D. Vasileska, S. Goodnick, O. Hartin","doi":"10.1109/IWCE.2009.5091087","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091087","url":null,"abstract":"In this paper we present state of the art modeling of GaN HEMTs, which includes for the first time simultaneous consideration of the electromechanical coupling, short-range Coulomb and quantum mechanical size quantization effects.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"141 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123070384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Device Simulation for Future Technologies 未来技术的设备仿真
2009 13th International Workshop on Computational Electronics Pub Date : 2009-05-27 DOI: 10.1109/IWCE.2009.5091105
M. Stettler, R. Kotlyar, T. Rakshit, T. Linton
{"title":"Device Simulation for Future Technologies","authors":"M. Stettler, R. Kotlyar, T. Rakshit, T. Linton","doi":"10.1109/IWCE.2009.5091105","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091105","url":null,"abstract":"Simulation approaches used in Intel to evaluate the applicability of new devices and materials for future microprocessor technologies are reviewed. Examples discussed include the evaluation of highly stressed materials, III -V HEMT devices, and carbon nanoribbons. The techniques employed are similar to those used in the research community, but focused on efficient evaluation within a versatile infrastructure that works for both development and research.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123110100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Sequential Transport in a Two-Dot Device 两点器件中的顺序传输
2009 13th International Workshop on Computational Electronics Pub Date : 2009-05-27 DOI: 10.1109/IWCE.2009.5091148
A. Valentin, S. Galdin-Retailleau, P. Dollfus
{"title":"Sequential Transport in a Two-Dot Device","authors":"A. Valentin, S. Galdin-Retailleau, P. Dollfus","doi":"10.1109/IWCE.2009.5091148","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091148","url":null,"abstract":"A physical model of sequential transport through a device containing two semiconductor nanocrystals has been developed. It is based on (i) the calculation of the nanocrystal phonon modes, (ii) the self consistent calculation of the nanocrystal electronic structure including collisional broadening, (iii) the calculation of tunnelling rates and (iv) the Monte Carlo computation of sequential tunnel transfers. The obtained I-V curve takes the form of a narrow peak whose width decreases with decreasing temperature. Lateral peaks due to phonon-assisted tunnelling appear to be strongly influenced by the temperature and by the surface phonon modes in the dots.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130017273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mobility Study of Polycrystalline MgZnO/ZnO Thin Film Layers with Monte Carlo Method 蒙特卡罗法研究多晶MgZnO/ZnO薄膜层的迁移率
2009 13th International Workshop on Computational Electronics Pub Date : 2009-05-27 DOI: 10.1109/IWCE.2009.5091118
Chih-I Huang, Yuh‐Renn Wu, I. Cheng, J. Z. Chen, Kuo‐Chuang Chiu, Tzer-Shen Lin
{"title":"Mobility Study of Polycrystalline MgZnO/ZnO Thin Film Layers with Monte Carlo Method","authors":"Chih-I Huang, Yuh‐Renn Wu, I. Cheng, J. Z. Chen, Kuo‐Chuang Chiu, Tzer-Shen Lin","doi":"10.1109/IWCE.2009.5091118","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091118","url":null,"abstract":"The study of transparent conducting oxide (TCO) has become an important area due to the applications of lighting and display technology. Therefore, high mobility and conductivity TCO materials would be a key issue to the industry. In this paper, we have applied the Monte Carlo method to analyze the mobility of single and poly-crystalline MgZnO/ZnO thin film layer. The effects of grain boundary scattering, ionized impurity scattering as well as phonon scattering have been included in our program. The grain boundary potential size and carrier screening effect has been analyzed with our developed 2D Poisson and drift-diffusion solver. With a careful design of modulation doping and including the effect of spontaneous and piezoelectric polarization, the grain boundary potential can be suppressed and thus the mobility of the ZnO layer can be improved.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128698256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Computational Study of Graphene Nanoribbon Resonant Tunneling Diodes 石墨烯纳米带共振隧道二极管的计算研究
2009 13th International Workshop on Computational Electronics Pub Date : 2009-05-27 DOI: 10.1109/IWCE.2009.5091097
G. Liang, H. Teong, K. Lam
{"title":"Computational Study of Graphene Nanoribbon Resonant Tunneling Diodes","authors":"G. Liang, H. Teong, K. Lam","doi":"10.1109/IWCE.2009.5091097","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091097","url":null,"abstract":"The structural effects of different graphene nanoribbon resonant tunneling diodes (GNR-RTDs) are investigated under different temperatures. Although the W-shape structure outperforms the H-shape structure in term of the peak current, the peak-to-valley ratio of the H-shape is higher than the W-shape due to the smaller peak currents of the former. Furthermore, the effects of the channel length and the contact's bandgap of the W-shape GNR RTDs on device performance are studied and their detailed device physics is also provided in this work.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130213611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Clocking Schemes for Field Coupled Devices from Magnetic Multilayers 磁多层场耦合器件的时钟方案
2009 13th International Workshop on Computational Electronics Pub Date : 2009-05-27 DOI: 10.1109/IWCE.2009.5091093
Nikolaos Rizos, Murad Omar, P. Lugli, G. Csaba, M. Becherer, D. Schmitt-Landsiedel
{"title":"Clocking Schemes for Field Coupled Devices from Magnetic Multilayers","authors":"Nikolaos Rizos, Murad Omar, P. Lugli, G. Csaba, M. Becherer, D. Schmitt-Landsiedel","doi":"10.1109/IWCE.2009.5091093","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091093","url":null,"abstract":"This paper introduces a clocking scheme that can be applied in magnetic field-coupled computing devices made from Co/Pt multilayers. The clocking wires are buried under the magnetic computing layer. Oscillating currents running through these wires generate an easy-axis field in the plane of the magnets. We show that this field can propagate signals between the magnetic dots and prevents frustration and splitting of the dots into multiple domains. We demonstrate our concept on a full micromagnetic simulation of an XOR gate. We argue that largescale logic devices could be built based on this architecture.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"517 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116237812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
Correction to the Schenk Model of Band-to-Band Tunneling in Silicon Applied to the Simulation of Nanowire Tunneling Transistors 应用于纳米线隧道晶体管模拟的Schenk模型的修正
2009 13th International Workshop on Computational Electronics Pub Date : 2009-05-27 DOI: 10.1109/IWCE.2009.5091099
A. Heigl, A. Schenk, G. Wachutka
{"title":"Correction to the Schenk Model of Band-to-Band Tunneling in Silicon Applied to the Simulation of Nanowire Tunneling Transistors","authors":"A. Heigl, A. Schenk, G. Wachutka","doi":"10.1109/IWCE.2009.5091099","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091099","url":null,"abstract":"We found out that the standard form of Schenk's model of band-to-band tunneling in silicon involves a poor approximation of the Airy-Integral and, therefore, overestimates the channel currents of realistic tunneling devices. In this paper we propose a better approximation resulting in a corrected form of the model, and we demonstrate its impact on the device characteristics of a tunneling transistor. Additionally, we investigated the influence of the corrected model on the local density correction and quantum confinement.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125702267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Anatomy of Carrier Backscattering in Silicon Nanowire Transistors 硅纳米线晶体管载流子后向散射的解剖
2009 13th International Workshop on Computational Electronics Pub Date : 2009-05-27 DOI: 10.1109/IWCE.2009.5091085
Seonghoon Jin, T. Tang, M. Fischetti
{"title":"Anatomy of Carrier Backscattering in Silicon Nanowire Transistors","authors":"Seonghoon Jin, T. Tang, M. Fischetti","doi":"10.1109/IWCE.2009.5091085","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091085","url":null,"abstract":"We study the physics of carrier backscattering in silicon nanowire transistors by using the numerical solution of the multisubband Boltzmann transport equation, where relevant scattering mechanisms by acoustic and intervalley phonons, surface roughness, and ionized impurities are included, accounting for intrasubband and intersubband, and elastic and inelastic transitions. The validity of several assumptions in the virtual source model is checked against the numerical solution. We have found that scattering processes make it difficult to model the macroscopic quantities at the virtual source without self-consistent simulations.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125114527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信