蒙特卡罗法研究多晶MgZnO/ZnO薄膜层的迁移率

Chih-I Huang, Yuh‐Renn Wu, I. Cheng, J. Z. Chen, Kuo‐Chuang Chiu, Tzer-Shen Lin
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引用次数: 0

摘要

由于照明和显示技术的应用,透明导电氧化物(TCO)的研究已成为一个重要的领域。因此,高迁移率和导电性的TCO材料将成为行业的关键问题。本文采用蒙特卡罗方法分析了单晶和多晶MgZnO/ZnO薄膜层的迁移率。我们的程序包括了晶界散射、离子杂质散射和声子散射的影响。利用自制的二维泊松和漂移扩散求解器对晶界电位大小和载流子筛选效应进行了分析。通过精心设计调制掺杂,并考虑自发极化和压电极化效应,可以抑制晶界势,从而提高ZnO层的迁移率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Mobility Study of Polycrystalline MgZnO/ZnO Thin Film Layers with Monte Carlo Method
The study of transparent conducting oxide (TCO) has become an important area due to the applications of lighting and display technology. Therefore, high mobility and conductivity TCO materials would be a key issue to the industry. In this paper, we have applied the Monte Carlo method to analyze the mobility of single and poly-crystalline MgZnO/ZnO thin film layer. The effects of grain boundary scattering, ionized impurity scattering as well as phonon scattering have been included in our program. The grain boundary potential size and carrier screening effect has been analyzed with our developed 2D Poisson and drift-diffusion solver. With a careful design of modulation doping and including the effect of spontaneous and piezoelectric polarization, the grain boundary potential can be suppressed and thus the mobility of the ZnO layer can be improved.
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