{"title":"偏置诱导应变效应，近程电子-电子相互作用和量子效应在AlGaN/GaN hemt","authors":"A. Ashok, D. Vasileska, S. Goodnick, O. Hartin","doi":"10.1109/IWCE.2009.5091087","DOIUrl":null,"url":null,"abstract":"In this paper we present state of the art modeling of GaN HEMTs, which includes for the first time simultaneous consideration of the electromechanical coupling, short-range Coulomb and quantum mechanical size quantization effects.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"141 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Bias Induced Strain Effects, Short-Range Electron - Electron Interactions and Quantum Effects in AlGaN/GaN HEMTs\",\"authors\":\"A. Ashok, D. Vasileska, S. Goodnick, O. Hartin\",\"doi\":\"10.1109/IWCE.2009.5091087\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we present state of the art modeling of GaN HEMTs, which includes for the first time simultaneous consideration of the electromechanical coupling, short-range Coulomb and quantum mechanical size quantization effects.\",\"PeriodicalId\":443119,\"journal\":{\"name\":\"2009 13th International Workshop on Computational Electronics\",\"volume\":\"141 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-05-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 13th International Workshop on Computational Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWCE.2009.5091087\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 13th International Workshop on Computational Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWCE.2009.5091087","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Bias Induced Strain Effects, Short-Range Electron - Electron Interactions and Quantum Effects in AlGaN/GaN HEMTs
In this paper we present state of the art modeling of GaN HEMTs, which includes for the first time simultaneous consideration of the electromechanical coupling, short-range Coulomb and quantum mechanical size quantization effects.
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