发布求助
文献互助 智能选刊 最新文献

2007 European Microwave Integrated Circuit Conference最新文献

筛选
英文 中文
Comparison of high-resistivity silicon surface passivation methods 高电阻率硅表面钝化方法的比较
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-26 DOI: 10.1109/EMICC.2007.4412687
M. Norling, D. Kuylenstierna, A. Vorobiev, K. Reimann, D. Lederer, J. Raskin, S. Gevorgian
{"title":"Comparison of high-resistivity silicon surface passivation methods","authors":"M. Norling, D. Kuylenstierna, A. Vorobiev, K. Reimann, D. Lederer, J. Raskin, S. Gevorgian","doi":"10.1109/EMICC.2007.4412687","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412687","url":null,"abstract":"This paper describes low-frequency measurements and comparative analysis of methods used for surface passivation of high-resistivity silicon (HR-Si). A number of substrates are evaluated; n-type and p-type HR-Si, with and without surface passivation by means of polysilicon or Ar-ion implantation. Additionally, a selection of samples is prepared with a layer of ferroelectric material. Substrate characteristics are extracted from measurements of the samples, allowing comparison of passivation methods and evaluation of the influence of the ferroelectric film. The study shows all passivation methods successful in removing any bias-dependence of substrate properties. Further, the high-temperature processing of the ferroelectric film is observed increasing the extracted substrate conductivity by about 70% for the Ar-ion implanted samples, and about 50% for the p-type samples passivated by poly-Si. The effective substrate conductivity of the n-type samples passivated by RTA-crystallised poly-Si appears unaffected.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"281 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114567572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
94 GHz single balanced cascode mixer using CPW tandem couplers 采用CPW串联耦合器的94ghz单平衡级联混频器
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-26 DOI: 10.1109/EMICC.2007.4412680
Sang Jin Lee, D. An, Mun-Kyo Lee, T. Baek, Byoung-Chul Jun, S. Moon, C. Park
{"title":"94 GHz single balanced cascode mixer using CPW tandem couplers","authors":"Sang Jin Lee, D. An, Mun-Kyo Lee, T. Baek, Byoung-Chul Jun, S. Moon, C. Park","doi":"10.1109/EMICC.2007.4412680","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412680","url":null,"abstract":"We report on a high isolation 94 GHz MMIC single balanced cascode mixer using 0.1 mum metamorphic high electron mobility transistor (MHEMT) and CPW tandem couplers. Tandem couplers are introduced to overcome the limits of CPW based conventional directional couplers. Conversion loss of the single balanced cascode mixer was 9.8 dB at an LO power of 10.9 dBm. PldB (1 dB compression point) was -14.8 dBm at an input power of -4 dBm. The LO to RF isolation at 94 GHz and 100 GHz were -29.5 dB and -39.5 dB, respectively.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133179121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Nonlinear-optimization techniques for quadruple-push oscillators 四推力振荡器的非线性优化技术
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-26 DOI: 10.1109/EMICC.2007.4412726
F. Ramírez, M. Pontón, A. Suárez
{"title":"Nonlinear-optimization techniques for quadruple-push oscillators","authors":"F. Ramírez, M. Pontón, A. Suárez","doi":"10.1109/EMICC.2007.4412726","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412726","url":null,"abstract":"A systematic procedure for the design of quadruple-push oscillators is presented. The 4th-harmonic output power is maximized through load-pull optimization of the sub-oscillator circuit. Two variants of the technique are considered: the use of ideal harmonic terminations, defined by their reflection coefficients, and the use of a substitution generator at the output frequency. The latter enables a direct control of the output amplitude at the 4th-harmonic component. A further global optimization of the entire quadruple-push configuration is performed, connecting one auxiliary generator to each sub-oscillator to impose the required 90deg phase shift and preventing undesired oscillation modes. A statistical analysis of the design sensitivity to discrepancies between the four sub-oscillator elements is also presented. The proposed techniques have been applied to the design of a quadruple-push oscillator operating at 20 GHz.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121931650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Four-port transformer in silicon-based technology 硅基技术的四端口变压器
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-26 DOI: 10.1109/EMICC.2007.4412663
H. Hsu, Ming-Chang Tsai, Kuo-Hsun Huang
{"title":"Four-port transformer in silicon-based technology","authors":"H. Hsu, Ming-Chang Tsai, Kuo-Hsun Huang","doi":"10.1109/EMICC.2007.4412663","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412663","url":null,"abstract":"The comprehensive characterization of 4-port transformer is paid in this paper, the contents include such as figure-of-merit, differential excitation. The coupling coefficient is added into the performance index of transformer. A foundry 90 nm CMOS technology is adopted to fabricate the 4-port transformer. Finally, an equivalent circuit is proposed to extract the model parameter in these transformers.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124053354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Investigation of IMD3 in GaN HEMT based on extended volterra series analysis 基于扩展伏特拉序列分析的氮化镓HEMT中IMD3的研究
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-26 DOI: 10.1109/EMICC.2007.4412645
E. R. Srinidhi, G. Kompa
{"title":"Investigation of IMD3 in GaN HEMT based on extended volterra series analysis","authors":"E. R. Srinidhi, G. Kompa","doi":"10.1109/EMICC.2007.4412645","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412645","url":null,"abstract":"This paper mainly focuses on providing theoretical justification for possible GaN device linearity improvement, interpretating key physical origins of IMD3. Based on bias dependent S-parameter measurement data of field-plate-free 8x125 mum GaN HEMT, IMD3 is modelled using classical Volterra series theory. Device diagnosis is hence carried out, by means of this technique, for efficiently localizing the distortion behaviour. Further, device linearity is shown to improve by appropriately tuning gate-drain feedback capacitance by taking advantage of field-plate technology proving the analysis to be a powerful tool for developing GaN HEMT technology. Further, with the intension of understanding IMD nulling, Volterra analysis is extended to 5th-degrce nonlinearity through which an insight into the distortion cancellation mechanism is obtained.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127979513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
SiGe millimeter-wave dynamic frequency divider with enhanced sensitivity incorporating a transimpedance stage 具有增强灵敏度的SiGe毫米波动态分频器，结合了跨阻抗级
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-26 DOI: 10.1109/EMICC.2007.4412653
S. Chartier, Liu Liu, G. Fischer, S. Glisic, H. Hohnemann, A. Trasser, H. Schumacher
{"title":"SiGe millimeter-wave dynamic frequency divider with enhanced sensitivity incorporating a transimpedance stage","authors":"S. Chartier, Liu Liu, G. Fischer, S. Glisic, H. Hohnemann, A. Trasser, H. Schumacher","doi":"10.1109/EMICC.2007.4412653","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412653","url":null,"abstract":"A Si/SiGe bipolar dynamic frequency divider designed for 77GHz/79GHz automotive radar is presented, which uses a transimpedance amplifier topology to improve sensitivity and operational bandwidth. Capable of operation for input frequencies from 22 GHz up to 93 GHz, the divider consumes only 35 mA at 5 V supply voltage and has a very compact die area of 295 x 475 mum2. In addition, measurements show that the divider operates in the full radar frequency band (76 GHz-81 GHz) up to a temperature of 100degC.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115817970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A 0.1-1.7 GHz, 1.1dB NF low noise amplifier for radioastronomy application 用于射电天文学应用的0.1-1.7 GHz, 1.1dB NF低噪声放大器
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-26 DOI: 10.1109/EMICC.2007.4412691
J. Lintignat, S. Darfeuille, B. Barelaud, L. Billonnet, B. Jarry, P. Mcunier, P. Gamand
{"title":"A 0.1-1.7 GHz, 1.1dB NF low noise amplifier for radioastronomy application","authors":"J. Lintignat, S. Darfeuille, B. Barelaud, L. Billonnet, B. Jarry, P. Mcunier, P. Gamand","doi":"10.1109/EMICC.2007.4412691","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412691","url":null,"abstract":"In this paper, a fully-differential low noise amplifier based on a classical cascode topology enhanced with noise cancelling technique is presented. This circuit achieves a 0.1-1.7 GHz bandwidth. The chip surface is less than 0.8 mm2. Measured circuit gain is greater than 18 dB and the 3 dB bandwidth is reached for a frequency of 18 GHz. The achieved noise figure is as low as 1.1 dB at 250 MHz and is lower than 1.3 dB all over the passband. This chip has been implemented using NXP QUBlC4G SiGe BiCMOS process.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121586295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Wideband millimeter wave pin diode spdt switch using ibm 0.13µm sige technology 宽带毫米波引脚二极管spdt开关采用ibm 0.13µm尺寸技术
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-26 DOI: 10.1109/EMICC.2007.4412659
Kwanhim Lam, H. Ding, Xuefeng Liu, B. Orner, J. Rascoe, B. Dewitt, E. Mina, B. Gaucher
{"title":"Wideband millimeter wave pin diode spdt switch using ibm 0.13µm sige technology","authors":"Kwanhim Lam, H. Ding, Xuefeng Liu, B. Orner, J. Rascoe, B. Dewitt, E. Mina, B. Gaucher","doi":"10.1109/EMICC.2007.4412659","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412659","url":null,"abstract":"Feasibility of wideband on-chip RF switch operating at millimeter wave frequencies using PIN diodes in IBM .13 mum SiGe technology is demonstrated. A SPDT reflective switch targeting 60 GHz wireless and radar applications is designed, fabricated, and measured. Good correlations between simulation and hardware are reported. Measured data show 2.0 to 2.7 dB of insertion loss over 51 to 78 GHz bandwidth with better than 12 dB return loss and 25 to 35 dB of isolation.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114225857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Low complexity RF-MEMS switch optimized for operation up to 120°C 低复杂度RF-MEMS开关优化，工作温度高达120°C
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-26 DOI: 10.1109/EMICC.2007.4412741
A. Sterile, C. Siegel, V. Ziegler, B. Schonlinner, U. Prechtel, S. Thilmont, H. Seidel, U. Schmid
{"title":"Low complexity RF-MEMS switch optimized for operation up to 120°C","authors":"A. Sterile, C. Siegel, V. Ziegler, B. Schonlinner, U. Prechtel, S. Thilmont, H. Seidel, U. Schmid","doi":"10.1109/EMICC.2007.4412741","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412741","url":null,"abstract":"This paper presents a RF-MEMS switch optimized for high temperature range of operation using a temperature stable metallization. The devices are fabricated on a silicon substrate in very low complexity process using only one metallization. The performed measurements characterize the properties of the metallization and also the properties of the entire switch in terms of creeping behaviour, RF performance and charging effects at different temperatures. A stable operation up to 120degC is demonstrated and the principle reliability of the switches is shown by 109 switching cycles.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"161 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123006838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A FPGA based digital predistorter for RF power amplifiers with memory effects 基于FPGA的具有记忆效应的射频功率放大器数字预失真器
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-26 DOI: 10.1109/EMICC.2007.4412666
A. Cesari, P. Gilabert, E. Bertran, G. Montoro, J. Dilhac
{"title":"A FPGA based digital predistorter for RF power amplifiers with memory effects","authors":"A. Cesari, P. Gilabert, E. Bertran, G. Montoro, J. Dilhac","doi":"10.1109/EMICC.2007.4412666","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412666","url":null,"abstract":"This paper presents a Field Programmable Gate Array (FPGA) based platform for prototyping digital predistortion (DPD) linearizers, and a scalable DPD architecture is proposed and implemented. This architecture eases the process of meeting transmission linearity requirements, depending of the degree of impairments added by the transmitter chain, and enables a quick migration between different DPD schemes. Details on the internal DPD organization, reconfiguration abilities, as well as experimental results showing DPD linearization of a 10 W LDMOS RF power amplifier are provided, giving an insight on actual development scenarios of DPD systems accounting for memory effects.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125528804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信