{"title":"硅基技术的四端口变压器","authors":"H. Hsu, Ming-Chang Tsai, Kuo-Hsun Huang","doi":"10.1109/EMICC.2007.4412663","DOIUrl":null,"url":null,"abstract":"The comprehensive characterization of 4-port transformer is paid in this paper, the contents include such as figure-of-merit, differential excitation. The coupling coefficient is added into the performance index of transformer. A foundry 90 nm CMOS technology is adopted to fabricate the 4-port transformer. Finally, an equivalent circuit is proposed to extract the model parameter in these transformers.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"98 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Four-port transformer in silicon-based technology\",\"authors\":\"H. Hsu, Ming-Chang Tsai, Kuo-Hsun Huang\",\"doi\":\"10.1109/EMICC.2007.4412663\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The comprehensive characterization of 4-port transformer is paid in this paper, the contents include such as figure-of-merit, differential excitation. The coupling coefficient is added into the performance index of transformer. A foundry 90 nm CMOS technology is adopted to fabricate the 4-port transformer. Finally, an equivalent circuit is proposed to extract the model parameter in these transformers.\",\"PeriodicalId\":436391,\"journal\":{\"name\":\"2007 European Microwave Integrated Circuit Conference\",\"volume\":\"98 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-12-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 European Microwave Integrated Circuit Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EMICC.2007.4412663\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 European Microwave Integrated Circuit Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2007.4412663","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The comprehensive characterization of 4-port transformer is paid in this paper, the contents include such as figure-of-merit, differential excitation. The coupling coefficient is added into the performance index of transformer. A foundry 90 nm CMOS technology is adopted to fabricate the 4-port transformer. Finally, an equivalent circuit is proposed to extract the model parameter in these transformers.