宽带毫米波引脚二极管spdt开关采用ibm 0.13µm尺寸技术

2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-26 DOI:10.1109/EMICC.2007.4412659

Kwanhim Lam, H. Ding, Xuefeng Liu, B. Orner, J. Rascoe, B. Dewitt, E. Mina, B. Gaucher

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引用次数: 11

摘要

演示了使用IBM .13 mum SiGe技术的PIN二极管在毫米波频率下工作的宽带片上射频开关的可行性。针对60ghz无线和雷达应用，设计、制造和测量了SPDT反射开关。仿真和硬件之间有很好的相关性。实测数据显示，在51至78 GHz带宽范围内，插入损耗为2.0至2.7 dB，回波损耗优于12 dB，隔离度为25至35 dB。

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Wideband millimeter wave pin diode spdt switch using ibm 0.13µm sige technology

Feasibility of wideband on-chip RF switch operating at millimeter wave frequencies using PIN diodes in IBM .13 mum SiGe technology is demonstrated. A SPDT reflective switch targeting 60 GHz wireless and radar applications is designed, fabricated, and measured. Good correlations between simulation and hardware are reported. Measured data show 2.0 to 2.7 dB of insertion loss over 51 to 78 GHz bandwidth with better than 12 dB return loss and 25 to 35 dB of isolation.

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来源期刊

2007 European Microwave Integrated Circuit Conference

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