ICT 2005. 24th International Conference on Thermoelectrics, 2005.最新文献_第5页

Developing PbTe-based superlattice structures with enhanced thermoelectric performance 开发热电性能增强的pbte基超晶格结构

ICT 2005. 24th International Conference on Thermoelectrics, 2005. Pub Date : 2005-06-19 DOI: 10.1109/ICT.2005.1519993

J. Caylor, K. Coonley, J. Stuart, S. Nangaoy, T. Colpitts, R. Venkatasubramanian

{"title":"Developing PbTe-based superlattice structures with enhanced thermoelectric performance","authors":"J. Caylor, K. Coonley, J. Stuart, S. Nangaoy, T. Colpitts, R. Venkatasubramanian","doi":"10.1109/ICT.2005.1519993","DOIUrl":"https://doi.org/10.1109/ICT.2005.1519993","url":null,"abstract":"The fabrication of n-type PbTe/PbTe/sub 0.75/Se/sub 0.25/ structures using a simple evaporation technique has yielded high-quality superlattice films, a significant reduction in lattice thermal conductivity and potentially enhanced thermoelectric device performance, compared to standard PbTeSe alloys. The room temperature lattice thermal conductivity of PbTeSe alloys have been reduced by a factor of two or more using PbTe/PbTeSe superlattices in the cross-plane direction. Using this advantage, we have begun characterizing the cross-plane ZT of PbTe/PbTeSe superlattice devices, including the development of appropriate Ohmic contacts for the PbTe-material system. We will discuss various device process technologies for improved Ohmic contacts. The room-temperature measurement of cross-plane figure-of-merit in n-type PbTe/PbTe/sub 0.75/Se/sub 0.25/ device structure by the transient method will be reported. Also, these results will be combined with temperature dependent measurements of in-plane resistivity and Seebeck coefficient to yield evidence of enhanced thermoelectric performance. The results from similar p-type films, as well as preliminary data on heteroepitaxial films grown on Bi/sub 2/Te/sub 3/ will be discussed.","PeriodicalId":422400,"journal":{"name":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123360516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Thermoelectric properties and phase stability of La/sub 10/S/sub 14/O La/sub 10/S/sub 14/O的热电性能和相稳定性

ICT 2005. 24th International Conference on Thermoelectrics, 2005. Pub Date : 2005-06-19 DOI: 10.1109/ICT.2005.1519917

M. Ohta, S. Hirai, H. Kato, H. Asahi

引用次数: 0

Thermoelectric properties of ZrNiSn based half Heusler compounds 基于ZrNiSn的半Heusler化合物的热电性质

ICT 2005. 24th International Conference on Thermoelectrics, 2005. Pub Date : 2005-06-19 DOI: 10.2320/MATERTRANS.47.1453

H. Muta, T. Yamaguchi, K. Kurosaki, S. Yamanaka

引用次数: 56

Measurement of thermoelectric properties of individual bismuth telluride nanowires 单个碲化铋纳米线热电性能的测量

ICT 2005. 24th International Conference on Thermoelectrics, 2005. Pub Date : 2005-06-19 DOI: 10.1109/ICT.2005.1519876

Jianhua Zhou, Chuangui Jin, J. Seol, Xiaoguang Li, Lio Shi

引用次数: 4

Galvanomagnetic properties of multicomponent solid solutions based on Bi and Sb chalcogenides 基于铋和锑硫属化合物的多组分固溶体的流磁学性质

ICT 2005. 24th International Conference on Thermoelectrics, 2005. Pub Date : 2005-06-19 DOI: 10.1109/ICT.2005.1519978

L. N. Lukyanova, V. Kutasov, V. Popov, P. Konstantinov

引用次数: 3

Structural features and transport properties of iodine intercalated misfit layer [BiCaO/sub 2/]/sub 2/[CoO/sub 2/]/sub 1.69/ single crystals 碘嵌入错配层[BiCaO/sub 2/]/sub 2/[CoO/sub 2/]/sub 1.69/单晶的结构特征及输运性质

ICT 2005. 24th International Conference on Thermoelectrics, 2005. Pub Date : 2005-06-19 DOI: 10.1109/ICT.2005.1519878

E. Guilmeau, M. Pollet, D. Grebille, M. Hervieu, H. Muguerra, R. Cloots, M. Mikami, R. Funahashi

引用次数: 0

Thermoelectric properties of sintered (Mn/sub y/Ni/sub 1-y/)/sub x/Fe/sub 3-x/O/sub 4/ 烧结(Mn/sub -y/ Ni/sub - 1-y/)/sub x/Fe/sub 3-x/O/sub 4/的热电性能

ICT 2005. 24th International Conference on Thermoelectrics, 2005. Pub Date : 2005-06-19 DOI: 10.1109/ICT.2005.1519884

N. Koseki, K. Machida, K. Yamamoto, Y. Oikawa, C. Kim, H. Ozaki

引用次数: 0

Synchrotron X-ray structure refinement of Zn/sub 4/Sb/sub 3/ Zn/sub 4/Sb/sub 3/的同步加速器x射线结构精化

ICT 2005. 24th International Conference on Thermoelectrics, 2005. Pub Date : 2005-06-19 DOI: 10.1109/ICT.2005.1519950

G. J. Snyder, P. Stephens, S. Haile

{"title":"Synchrotron X-ray structure refinement of Zn/sub 4/Sb/sub 3/","authors":"G. J. Snyder, P. Stephens, S. Haile","doi":"10.1109/ICT.2005.1519950","DOIUrl":"https://doi.org/10.1109/ICT.2005.1519950","url":null,"abstract":"The structure of the thermoelectric Zn/sub 4/Sb/sub 3/ is refined using synchrotron X-ray powder diffraction data collected at wavelengths both near to and relatively far from the Zn adsorption edge. In agreement with earlier studies, the compound crystallized in a trigonal structure, space group R~3c with a = 12.2406(3)/spl Aring/, c = 12.4361(3)/spl Aring/ at room temperature, and there are three primary sites in the asymmetric unit. Each site contains only one atomic species, in contrast to many previous studies. The primary Zn (36f) site is slightly less than fully occupied, whereas the two Sb sites (18e and 12c) are fully occupied. In addition, several Zn interstitial sites (36f) with low occupancies (>5%) are also present. The results are in agreement with the model proposed by Snyder, as opposed to that originally proposed by Mayer and more recently by Mozharivskyj. The refined site occupancies yield an overall stoichiometry which is consistent with that measured experimentally. The presence of interstitial Zn can be understood in terms of charge balance requirements and is likely responsible for the exceptionally low thermal conductivity of this material.","PeriodicalId":422400,"journal":{"name":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129883277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Effect of rare earth doping on the thermoelectric and electrical transport properties of the transition metal pentatelluride HfTe/sub 5/ 稀土掺杂对过渡金属五碲化物HfTe/ sub5 /热电输运性质的影响

ICT 2005. 24th International Conference on Thermoelectrics, 2005. Pub Date : 2005-06-19 DOI: 10.1109/ICT.2005.1519882

N. Lowhorn, T. Tritt, E. Abbott, J. Kolis

{"title":"Effect of rare earth doping on the thermoelectric and electrical transport properties of the transition metal pentatelluride HfTe/sub 5/","authors":"N. Lowhorn, T. Tritt, E. Abbott, J. Kolis","doi":"10.1109/ICT.2005.1519882","DOIUrl":"https://doi.org/10.1109/ICT.2005.1519882","url":null,"abstract":"The transition metal pentatellurides HfTe/sub 5/ and ZrTe/sub 5/ have been observed to possess high thermoelectric power factors and anomalous electrical transport behavior. The temperature dependence of the resistivity is semimetallic except for a large resistive peak as a function of temperature at around 75 K for HfTe/sub 5/ and 145 K for ZrTe/sub 5/. At a temperature corresponding to this peak, the thermopower crosses zero as it moves from large positive values to large negative values. Previous doping studies have shown profound and varied effects on the anomalous transport. In this study we investigate the effect on the electrical resistivity, thermopower, and magnetoresistance of doping HfTe/sub 5/ with rare-earth elements. Doping with rare-earth elements of increasing atomic number leads to a systematic suppression of the anomalous transport behavior and large magnetoresistive effect observed in the parent compound. Rare-earth doping also leads to an enhancement of the thermoelectric power factor over previously studied pentatellurides. For nominal Hf/sub 0.75/Nd/sub 0.25/Te/sub 5/ and Hf/sub 0.75/Sm/sub 0.25/Te/sub 5/, values more than a factor of 2 larger than that of the commonly used thermoelectric material Bi/sub 2/Te/sub 3/ were observed.","PeriodicalId":422400,"journal":{"name":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132196019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Cooling performance of silicon-based thermoelectric device on high power LED 大功率LED上硅基热电器件的散热性能

ICT 2005. 24th International Conference on Thermoelectrics, 2005. Pub Date : 2005-06-19 DOI: 10.1109/ICT.2005.1519885

Jen-Hau Cheng, Chun-Kai Liu, Y. Chao, R. Tain

引用次数: 83