单个碲化铋纳米线热电性能的测量

Jianhua Zhou, Chuangui Jin, J. Seol, Xiaoguang Li, Lio Shi
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引用次数: 4

摘要

我们测量了不同原子比或x的电化学沉积碲化铋(Bi/sub x/Te/sub 1-x/)纳米线的热电性能。在本文中,我们报告了测量方法和结果,从一批纳米线中发现x约为0.54。在300 K温度下,纳米线的塞贝克系数为-30 /spl mu/V/K。所得纳米线的电导率表现出异常弱的温度依赖性,在300 K时的电导率仅比本体Bi/sub 0.485/Te/sub 0.515/晶体的电导率低5.6%。该纳米线的导热系数比本体Bi/sub 0.485/Te/sub 0.515/晶体的导热系数低44%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Measurement of thermoelectric properties of individual bismuth telluride nanowires
We have measured the thermoelectric properties of electrochemically deposited bismuth telluride (Bi/sub x/Te/sub 1-x/) nanowires with different atomic ratio or x. In this paper, we report the measurement method and the results for an individual nanowire from a batch with x found to be about 0.54. The Seebeck coefficient of the nanowire was found to be -30 /spl mu/V/K at temperature 300 K. The obtained electrical conductivity of the nanowire showed unusually weak temperature dependence, and the value at 300 K was only 5.6% lower than that of bulk Bi/sub 0.485/Te/sub 0.515/ crystal. The thermal conductivity of the nanowires was found to be 44% lower than that of bulk Bi/sub 0.485/Te/sub 0.515/ crystals.
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