大功率LED上硅基热电器件的散热性能

Jen-Hau Cheng, Chun-Kai Liu, Y. Chao, R. Tain
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引用次数: 83

摘要

本文介绍了硅基热电器件在大功率LED上的热管理新应用。硅基TE器件采用微细加工和倒装组装工艺制备。红外热像仪拍摄的热图像证明了硅基TE器件的冷却功能。由于LED芯片封装在封装中,无法直接测量LED芯片的结温。采用电-热转换法测量大功率LED的结温。结果表明,硅基热电器件可以有效地降低大功率LED的热阻。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Cooling performance of silicon-based thermoelectric device on high power LED
In this paper, a new thermal management application of silicon-based thermoelectric (TE) device on high power LED is unveiled. The silicon-based TE device is fabricated by the microfabrication and flip-chip assembly process. Thermal images photographed by infrared camera demonstrate the cooling function of the silicon-based TE devices. Because the LED chip is encapsulated in a package, the junction temperature of the LED chip cannot be measured directly. An electrical-thermal conversion method is used to measure the junction temperature of the high power LED. The result shows that the silicon-based thermoelectric device can effectively reduce the thermal resistance of the high power LED.
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