Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.最新文献_第6页

An alternative thermodynamic model for PZT PZT的另一种热力学模型

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI: 10.1109/ISAF.2002.1195860

A. Bell, E. Furman

引用次数: 3

Nonlinear characterization of high power transducers 高功率换能器的非线性特性

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI: 10.1109/ISAF.2002.1195933

P. Gonnard, L. Petit

引用次数: 2

Potassium niobate single-domain crystals as piezoelectrics with low dielectric constants and high electromechanical coupling properties 铌酸钾单畴晶体具有低介电常数和高机电耦合性能的压电材料

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI: 10.1109/ISAF.2002.1195951

S. Wada, K. Muraoka, H. Kakemoto, H. Kumagai, T. Tsurumi

{"title":"Potassium niobate single-domain crystals as piezoelectrics with low dielectric constants and high electromechanical coupling properties","authors":"S. Wada, K. Muraoka, H. Kakemoto, H. Kumagai, T. Tsurumi","doi":"10.1109/ISAF.2002.1195951","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195951","url":null,"abstract":"Piezoelectric properties of potassium niobate (KNbO/sub 3/) crystals with the single-domain state were investigated. KNbO/sub 3/ crystals were cut, polished and sized into various shapes. The mechanical processing induced mechanical damage into the crystals. Remove of the stressed surface layers was very effective to achieve high mechanical quality factor (Q/sub m/). After this treatment, KNbO/sub 3/ crystals were poled by the 2-step poling method. As a result, the domain state was almost single-domain. Using poled KNbO/sub 3/ single-domain crystals, the piezoelectric properties with k/sub 32/ modes were measured using a conventional resonance method. As a result, the [001]/sub o/ poled KNbO/sub 3/ crystals exhibited the electromechanical coupling factor (k/sub 32/) of almost 40%, the piezoelectric constant (d/sub 32/) of almost 18.5 pC/N, the dielectric constant (/spl epsiv//sub 33/) of almost 48 and Q/sub m/ over 7,600. Thus, the KNbO/sub 3/ crystals are piezoelectrics with low dielectric constants and high electromechanical coupling properties, i.e., KNbO/sub 3/ crystal is a promising material for sensor application.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131175684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

A random-field model for ferroelectric domain dynamics: analysis by stretched exponential functions 铁电畴动力学的随机场模型:用拉伸指数函数分析

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI: 10.1109/ISAF.2002.1195859

D. Viehland, J. Li

引用次数: 0

Characterization study of the growth and electromechanical properties of 67PMN-33PT single crystals 67PMN-33PT单晶生长及机电性能表征研究

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI: 10.1109/ISAF.2002.1195960

C. B. DiAntonio, F. Williams, S. Pilgrim, W. Schulze

{"title":"Characterization study of the growth and electromechanical properties of 67PMN-33PT single crystals","authors":"C. B. DiAntonio, F. Williams, S. Pilgrim, W. Schulze","doi":"10.1109/ISAF.2002.1195960","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195960","url":null,"abstract":"A modified Bridgman approach, developed at the Shanghai Institute of Ceramics, Chinese Academy of Sciences (SICCAS), has been used to grow ferroelectric relaxor PMN-PT single crystals. A series of technological barriers on the growth of ferroelectric relaxor PMN-PT single crystals, such as making seeds, seeded-orientation control, size-enlargement, uniformity of the grown single crystals, and crucible leakage, have been progressively overcome. After poling, the electromechanical properties of the grown PMN-PT single crystals are; weak-field permittivity max (/spl epsiv//sub max/) /spl sim/ 29,000 at 162/spl deg/C, 1 kHz and 1 V/sub rms/, dielectric loss (tan /spl delta/) < 0.9%; piezoelectric coefficient d/sub 33/ > 2,000 pC/N; mechanical-electric coupling factors, k/sub 33/ /spl sim/ 0.92-0.94 and k/sub t/ /spl sim/ 0.61-0.62, respectively. The electromechanical properties of the 67PMN-33PT single crystal composition are measured as a function of temperature. This analysis reveals the effects of the diffuse phase transition on the electromechanical properties as piezoelectricity in the material develops.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114854516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

BaTiO/sub 3/ synthesis technique and its effect on BME dielectric formulations BaTiO/ sub3 /合成技术及其对BME电介质配方的影响

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI: 10.1109/ISAF.2002.1195915

D. Mccauley, M. Chu, M. Megherhi, M. Creedon, K. Albertsen, E. Davis

{"title":"BaTiO/sub 3/ synthesis technique and its effect on BME dielectric formulations","authors":"D. Mccauley, M. Chu, M. Megherhi, M. Creedon, K. Albertsen, E. Davis","doi":"10.1109/ISAF.2002.1195915","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195915","url":null,"abstract":"Within the worldwide capacitor industry there is a wide range of synthesis techniques for producing the starting BaTiO/sub 3/ precursor, which is the primary component for X7R capacitor formulations. The intention of this study was to draw some inherent conclusions about advantages or disadvantages of certain synthesis techniques. Several dielectric compositions for high capacitance BME multilayer ceramic capacitor (MLCC) applications have been examined. These formulations are based on BaTiO/sub 3/ precursors that were synthesized from solid state as well as two oxalate methods. The focus of this work was to identify the influence that the host BaTiO/sub 3/ had on the reliability of the MLCC. The model proposed by Prokopowitz and Vaskas was used to characterize the reliability behavior. Analysis of the data shows that it is very difficult to predict how a particular BaTiO/sub 3/ precursor will work in a given BME formulation without actually producing the formulation and performing the appropriate testing. For the solid state based formulation the value obtained for /spl eta/ was much higher than expected where the E/sub a/ was comparable to the values found in the literature. However, while the two oxalate based formulations behaved very differently from the solid state system, they behaved very similar to one another. For these systems, the /spl eta/ was in agreement with the values found in the literature but the E/sub a/ was much higher than expected.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124351566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fabrication and characterization of piezoelectric ceramic actuators with functional gradients 具有功能梯度的压电陶瓷作动器的制作与表征

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI: 10.1109/ISAF.2002.1195935

D. Jin, Z. Meng

{"title":"Fabrication and characterization of piezoelectric ceramic actuators with functional gradients","authors":"D. Jin, Z. Meng","doi":"10.1109/ISAF.2002.1195935","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195935","url":null,"abstract":"We fabricated a PZT/ZnO piezoelectric ceramic actuator with graded distribution of piezoelectric coefficient and resistivity through the thickness. There were tremendous differences of electric properties between its two sides, but these properties changed gradually in the transition region. The PZT composition was determined from authors' previous work. ZnO ceramics was tailored by adding dopants, such as Al and Mn ions, respectively. The microstructure of the sample profile and composition distribution through the thickness was examined by electron probe microanalysis, verifying the existence of gradient microstructure developed from the diffusion of Zn/sup 2+/. The resistivity of ZnO layer is more than ten magnitudes lower than that of PZT layer. This made the PZT layer be more effectively poled and suffered nearly all the driving voltage. Displacement curves of the PZT/ZnO Functionaly Gradient Piezoceramic Actuator (FGMPA) were investigated. The results show that tip displacement of the actuator is higher than that of La-PZT/Fe-PZT FGMPA for the same geometrical dimensions and applied voltage.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122083067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Microwave dielectric properties correlated to crystal structure: an analysis 微波介电特性与晶体结构的关系分析

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI: 10.1109/ISAF.2002.1195874

H. Ohsato, A. Kan, K. Kakimoto, H. Ogawa, S. Nishigaki

引用次数: 0

Growth of substituted langasite-type Ca/sub 3/NbGa/sub 3/Si/sub 2/O/sub 14/ single crystals, and their dielectric, elastic and piezoelectric properties 取代langasite型Ca/sub 3/NbGa/sub 3/Si/sub 2/O/sub 14/单晶的生长及其介电、弹性和压电性能

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI: 10.1109/ISAF.2002.1195955

M. Adachi, T. Funakawa, T. Karaki

引用次数: 0

Structure control of ferroelectric PbTiO/sub 3/ thin films using SrTiO/sub 3/ buffer layer prepared by metalorganic decomposition 利用金属有机分解制备的SrTiO/ sub3 /缓冲层控制铁电PbTiO/ sub3 /薄膜的结构

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI: 10.1109/ISAF.2002.1195891

H. Fukuda, K. Kimura, K. Salam, S. Nomura

引用次数: 0