利用金属有机分解制备的SrTiO/ sub3 /缓冲层控制铁电PbTiO/ sub3 /薄膜的结构

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI:10.1109/ISAF.2002.1195891

H. Fukuda, K. Kimura, K. Salam, S. Nomura

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引用次数: 0

摘要

采用金属有机分解(MOD)技术在SrTiO/ sub3 /缓冲层上成功地形成了多晶PbTiO/ sub3 /薄膜。在700℃、N/sub / 2环境下退火30 min后，PbTiO/sub / 3薄膜呈现钙钛矿结构。在PbTiO/sub 3//SrTiO/sub 3//Si结构中获得了较高的介电常数157。在MFIS结构的电容-电压曲线中，磁滞回线显示出1.2 V的记忆窗口，由于极化效应，编程电压摆幅为/spl plusmn/5 V。该存储器窗口将满足mfi - fet存储器在未来ulsi中低压工作的实际应用。

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Structure control of ferroelectric PbTiO/sub 3/ thin films using SrTiO/sub 3/ buffer layer prepared by metalorganic decomposition

Polycrystalline PbTiO/sub 3/ thin films were successfully formed on SrTiO/sub 3/ buffer layer by metalorganic decomposition (MOD) technique. The PbTiO/sub 3/ films showed the perovskite structure after annealing at 700/spl deg/C for 30 min in N/sub 2/ ambient. A higher dielectric constant of 157 is obtained in the PbTiO/sub 3//SrTiO/sub 3//Si structure. The hysteresis loop in the capacitance-voltage curves of the MFIS configuration indicated a memory window of 1.2 V with a programming voltage swing of /spl plusmn/5 V due to polarization effect. The memory window will satisfy the practical application of the MFIS-FET memories operating at low voltage in future ULSIs.

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Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.

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