C. B. DiAntonio, F. Williams, S. Pilgrim, W. Schulze
{"title":"67PMN-33PT单晶生长及机电性能表征研究","authors":"C. B. DiAntonio, F. Williams, S. Pilgrim, W. Schulze","doi":"10.1109/ISAF.2002.1195960","DOIUrl":null,"url":null,"abstract":"A modified Bridgman approach, developed at the Shanghai Institute of Ceramics, Chinese Academy of Sciences (SICCAS), has been used to grow ferroelectric relaxor PMN-PT single crystals. A series of technological barriers on the growth of ferroelectric relaxor PMN-PT single crystals, such as making seeds, seeded-orientation control, size-enlargement, uniformity of the grown single crystals, and crucible leakage, have been progressively overcome. After poling, the electromechanical properties of the grown PMN-PT single crystals are; weak-field permittivity max (/spl epsiv//sub max/) /spl sim/ 29,000 at 162/spl deg/C, 1 kHz and 1 V/sub rms/, dielectric loss (tan /spl delta/) < 0.9%; piezoelectric coefficient d/sub 33/ > 2,000 pC/N; mechanical-electric coupling factors, k/sub 33/ /spl sim/ 0.92-0.94 and k/sub t/ /spl sim/ 0.61-0.62, respectively. The electromechanical properties of the 67PMN-33PT single crystal composition are measured as a function of temperature. This analysis reveals the effects of the diffuse phase transition on the electromechanical properties as piezoelectricity in the material develops.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Characterization study of the growth and electromechanical properties of 67PMN-33PT single crystals\",\"authors\":\"C. B. DiAntonio, F. Williams, S. Pilgrim, W. Schulze\",\"doi\":\"10.1109/ISAF.2002.1195960\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A modified Bridgman approach, developed at the Shanghai Institute of Ceramics, Chinese Academy of Sciences (SICCAS), has been used to grow ferroelectric relaxor PMN-PT single crystals. A series of technological barriers on the growth of ferroelectric relaxor PMN-PT single crystals, such as making seeds, seeded-orientation control, size-enlargement, uniformity of the grown single crystals, and crucible leakage, have been progressively overcome. After poling, the electromechanical properties of the grown PMN-PT single crystals are; weak-field permittivity max (/spl epsiv//sub max/) /spl sim/ 29,000 at 162/spl deg/C, 1 kHz and 1 V/sub rms/, dielectric loss (tan /spl delta/) < 0.9%; piezoelectric coefficient d/sub 33/ > 2,000 pC/N; mechanical-electric coupling factors, k/sub 33/ /spl sim/ 0.92-0.94 and k/sub t/ /spl sim/ 0.61-0.62, respectively. The electromechanical properties of the 67PMN-33PT single crystal composition are measured as a function of temperature. This analysis reveals the effects of the diffuse phase transition on the electromechanical properties as piezoelectricity in the material develops.\",\"PeriodicalId\":415725,\"journal\":{\"name\":\"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.\",\"volume\":\"57 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-05-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.2002.1195960\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2002.1195960","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Characterization study of the growth and electromechanical properties of 67PMN-33PT single crystals
A modified Bridgman approach, developed at the Shanghai Institute of Ceramics, Chinese Academy of Sciences (SICCAS), has been used to grow ferroelectric relaxor PMN-PT single crystals. A series of technological barriers on the growth of ferroelectric relaxor PMN-PT single crystals, such as making seeds, seeded-orientation control, size-enlargement, uniformity of the grown single crystals, and crucible leakage, have been progressively overcome. After poling, the electromechanical properties of the grown PMN-PT single crystals are; weak-field permittivity max (/spl epsiv//sub max/) /spl sim/ 29,000 at 162/spl deg/C, 1 kHz and 1 V/sub rms/, dielectric loss (tan /spl delta/) < 0.9%; piezoelectric coefficient d/sub 33/ > 2,000 pC/N; mechanical-electric coupling factors, k/sub 33/ /spl sim/ 0.92-0.94 and k/sub t/ /spl sim/ 0.61-0.62, respectively. The electromechanical properties of the 67PMN-33PT single crystal composition are measured as a function of temperature. This analysis reveals the effects of the diffuse phase transition on the electromechanical properties as piezoelectricity in the material develops.
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