{"title":"Optical waveguide taps on silicon CMOS circuits","authors":"V. Stenger, F. Beyette","doi":"10.1117/12.409227","DOIUrl":"https://doi.org/10.1117/12.409227","url":null,"abstract":"A CMOS compatible integrated optic waveguide tap technology is proposed which has potential for high electrical and optical bandwidth. The technology encompasses grating couplers and mode-controlled optical detection to realize low-loss, wavelength-selective taps.","PeriodicalId":415720,"journal":{"name":"2000 Digest of the LEOS Summer Topical Meetings. Electronic-Enhanced Optics. Optical Sensing in Semiconductor Manufacturing. Electro-Optics in Space. Broadband Optical Networks (Cat. No.00TH8497)","volume":"238 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123297900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Optoelectronic interconnections for high throughput networks and pipeline signal processing","authors":"A. Sawchuk, C. Kuznia","doi":"10.1109/LEOSST.2000.869687","DOIUrl":"https://doi.org/10.1109/LEOSST.2000.869687","url":null,"abstract":"We describe the concept and experimental implementation of a smart pixel (SP) system for networking and image/video processing based on digital optoelectronic (DO) technology. DO technology enables 2D optical data transfer to and from VLSI chips at throughputs of >1 Tb/s, with very low latency (<10 ns) and very high speed (>500 Mb/s) on each of many (>100) parallel data channels. This system concept is called Transpar-TR (Translucent Smart Pixel Array-Token-Ring). The Transpar-TR is configured as a photonic ring network that transfers digital data using three-dimensional optical parallel data packets (OPDPs). Similar to most packet based networking schemes on serial interconnect links, the OPDPs contain data payload and source/destination node address information. The data pipe between nodes consists of a 2D array of optical links each operating at on-chip clock rates. This data pipe between nodes is designed to accommodate the sum of all other smaller data pipes entering the network from individual nodes, thus this system is an example of a firehose architecture. Our goal is to demonstrate two features unique to SP systems: networking with 2D spatial parallel channels and 2D parallel pipeline image and video processing for applications such as compression and tracking.","PeriodicalId":415720,"journal":{"name":"2000 Digest of the LEOS Summer Topical Meetings. Electronic-Enhanced Optics. Optical Sensing in Semiconductor Manufacturing. Electro-Optics in Space. Broadband Optical Networks (Cat. No.00TH8497)","volume":"184 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116708097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Management optical networks: view of the EURESCOM project P918","authors":"A. Manzalini, A. Gladisch, G. Lehr","doi":"10.1109/LEOSST.2000.869746","DOIUrl":"https://doi.org/10.1109/LEOSST.2000.869746","url":null,"abstract":"The EURESCOM program includes the P918 project \"Integration of IP over Optical Networks: networking and management\". One of the main goals of the P918 project is to define the functional architecture for a client-independent Optical Transport Network (OTN) carrying different clients including also an optimised IP-based network. In particular, aspects of management of an OTN are investigated to reach a recommended view for Network Operators. In general P918 is applying a transport network modelling recommended by ITU, which means that network scenarios, functional architecture and management requirements will be the basis for the specification of atomic functions and management information models. The presentation will highlight some relevant results coming from P918, including a discussion on the way to define the OTN functional requirements, in line with the reality of implementation of optical networks.","PeriodicalId":415720,"journal":{"name":"2000 Digest of the LEOS Summer Topical Meetings. Electronic-Enhanced Optics. Optical Sensing in Semiconductor Manufacturing. Electro-Optics in Space. Broadband Optical Networks (Cat. No.00TH8497)","volume":"166 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115915613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Vrazel, J. Chang, M. Brooke, N. Jokerst, A. Brown
{"title":"Alignment tolerant hybrid photoreceivers using inverted MSMs","authors":"M. Vrazel, J. Chang, M. Brooke, N. Jokerst, A. Brown","doi":"10.1109/LEOSST.2000.869683","DOIUrl":"https://doi.org/10.1109/LEOSST.2000.869683","url":null,"abstract":"We report on the hybrid integration of a thin film large area (250/spl times/250 /spl mu/m/sup 2/, low capacitance (0.43 pF), high responsivity (0.5 A/W, with no AR coating) InGaAs/InP inverted-MSM onto a Si CMOS differential receiver circuit. This integrated receiver demonstrated a bit-error-rate of 10/sup -11/ at 414 Mbps and 0.1/spl times/10/sup -10/ at 480 Mbps. The alignment tolerance of this receiver has been modeled and measured at 200 Mbps, and the theoretical results correspond quite well to experimental data.","PeriodicalId":415720,"journal":{"name":"2000 Digest of the LEOS Summer Topical Meetings. Electronic-Enhanced Optics. Optical Sensing in Semiconductor Manufacturing. Electro-Optics in Space. Broadband Optical Networks (Cat. No.00TH8497)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114911989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Beyond-tera-bit-per-second-capacity optical core networks","authors":"N. Henmi","doi":"10.1109/LEOSST.2000.869762","DOIUrl":"https://doi.org/10.1109/LEOSST.2000.869762","url":null,"abstract":"Promising candidates for applying optical technologies to next-generation networks include optical self-healing for the transport function and an ultra-large-scale optical-switch fabric for the grooming/multiplexing function have been summarized.","PeriodicalId":415720,"journal":{"name":"2000 Digest of the LEOS Summer Topical Meetings. Electronic-Enhanced Optics. Optical Sensing in Semiconductor Manufacturing. Electro-Optics in Space. Broadband Optical Networks (Cat. No.00TH8497)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115233459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Performance of broadband DWDM networks","authors":"S. Mysore, R. Villà, G. Beveridge","doi":"10.1109/LEOSST.2000.869750","DOIUrl":"https://doi.org/10.1109/LEOSST.2000.869750","url":null,"abstract":"Broadband companies have started deploying DWDM networks for the transport of narrowcast (NC) services such as telephony, high-speed-data and video-on-demand. In this paper we compare the performance of four different broadband DWDM architectures. All four architectures describe a broadband DWDM overlay system between the HE and the hub for the transport of NC services. Separate fibers are required for the DWDM overlay and for the broadcast (BC) transport since otherwise the SRS-induced crosstalk would destroy the signal quality of the predominantly analog BC video channels. At the hub, each of the demultiplexed wavelengths carrying the NC signal is routed to a specific node. The differences in the architectures lie in the way the BC and NC signals are combined prior to distribution over the coax plant.","PeriodicalId":415720,"journal":{"name":"2000 Digest of the LEOS Summer Topical Meetings. Electronic-Enhanced Optics. Optical Sensing in Semiconductor Manufacturing. Electro-Optics in Space. Broadband Optical Networks (Cat. No.00TH8497)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127233750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"High speed CMOS imaging","authors":"E. Fossum, A. Krymski","doi":"10.1109/LEOSST.2000.869673","DOIUrl":"https://doi.org/10.1109/LEOSST.2000.869673","url":null,"abstract":"This paper analyzes basic architectural features of CMOS digital imagers, presents the history of their development, and gives examples of high-speed CMOS active pixel sensor implementation.","PeriodicalId":415720,"journal":{"name":"2000 Digest of the LEOS Summer Topical Meetings. Electronic-Enhanced Optics. Optical Sensing in Semiconductor Manufacturing. Electro-Optics in Space. Broadband Optical Networks (Cat. No.00TH8497)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128386375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"In situ Raman spectroscopic characterization of compound semiconductor free carrier concentration","authors":"J. Maslar, C. Wang, D. Oakley","doi":"10.1109/LEOSST.2000.869719","DOIUrl":"https://doi.org/10.1109/LEOSST.2000.869719","url":null,"abstract":"Recently, developments in detectors, filters, and laser technology now make Raman spectroscopy more attractive as an in situ probe. The objective of this work is to develop and evaluate Raman spectroscopy as an in situ, spatially resolved probe of compound semiconductor electrical properties for use in process monitoring and control.","PeriodicalId":415720,"journal":{"name":"2000 Digest of the LEOS Summer Topical Meetings. Electronic-Enhanced Optics. Optical Sensing in Semiconductor Manufacturing. Electro-Optics in Space. Broadband Optical Networks (Cat. No.00TH8497)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121416473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H.D. Chen, K. Liang, Q. Zeng, X.J. Li, Z.B. Chen, Y. Du, R. Wu
{"title":"Hybrid GaAs MQW modulators and detectors flip-chip bonded to silicon CMOS circuitry","authors":"H.D. Chen, K. Liang, Q. Zeng, X.J. Li, Z.B. Chen, Y. Du, R. Wu","doi":"10.1109/LEOSST.2000.869681","DOIUrl":"https://doi.org/10.1109/LEOSST.2000.869681","url":null,"abstract":"We demonstrated the hybrid integration of reflection-mode, surface-normal GaAs/AlGaAs MQW modulator and detector array directly over 1 /spl mu/m silicon CMOS circuitry via flip-chip solder bonding. Some MQW devices were used as input-light detectors and others served as output-light modulators, which were designed for 850 nm wavelength operation. The GaAs/AlGaAs MQW structure was grown by molecular beam epitaxy. In order to increase the absorption of the intrinsic region, the period of quantum wells was chosen to be 90 pairs and decreased the thickness of AlGaAs barriers for decreasing for operation voltage.","PeriodicalId":415720,"journal":{"name":"2000 Digest of the LEOS Summer Topical Meetings. Electronic-Enhanced Optics. Optical Sensing in Semiconductor Manufacturing. Electro-Optics in Space. Broadband Optical Networks (Cat. No.00TH8497)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134173449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xiao Lin, Qiang Wang, Yan Wang, D. Lee, Wei Chen, Ting Li, Yung Jui Chen
{"title":"Optical switch fabric design for large fabrication tolerance","authors":"Xiao Lin, Qiang Wang, Yan Wang, D. Lee, Wei Chen, Ting Li, Yung Jui Chen","doi":"10.1109/LEOSST.2000.869761","DOIUrl":"https://doi.org/10.1109/LEOSST.2000.869761","url":null,"abstract":"Optical cross-connect switches (OXC) are key components in advanced WDM networks. Integrated optical switches have been reported using several mechanisms and materials. We have demonstrated waveguide-type thermo-optic switches which employ silica-based planar lightwave circuits. The crosstalk of OXC, due to a number of reasons, is an important parameter which influences the system performance. One of the reasons is the coupling ratio (CR) of a 3 dB coupler in a switch unit. Due to fabrication limitations, it is hard to obtain the exact CR as designed. We propose a scheme to achieve low crosstalk even with variation of CR. The design of our optical switch fabric is a strictly non-blocking matrix switch using dilated double-layer architecture.","PeriodicalId":415720,"journal":{"name":"2000 Digest of the LEOS Summer Topical Meetings. Electronic-Enhanced Optics. Optical Sensing in Semiconductor Manufacturing. Electro-Optics in Space. Broadband Optical Networks (Cat. No.00TH8497)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130115265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}