Alignment tolerant hybrid photoreceivers using inverted MSMs

M. Vrazel, J. Chang, M. Brooke, N. Jokerst, A. Brown
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引用次数: 1

Abstract

We report on the hybrid integration of a thin film large area (250/spl times/250 /spl mu/m/sup 2/, low capacitance (0.43 pF), high responsivity (0.5 A/W, with no AR coating) InGaAs/InP inverted-MSM onto a Si CMOS differential receiver circuit. This integrated receiver demonstrated a bit-error-rate of 10/sup -11/ at 414 Mbps and 0.1/spl times/10/sup -10/ at 480 Mbps. The alignment tolerance of this receiver has been modeled and measured at 200 Mbps, and the theoretical results correspond quite well to experimental data.
利用反向磁导管的准直公差混合光电接收器
我们报道了一种薄膜大面积(250/spl倍/250 /spl mu/m/sup /2 /)、低电容(0.43 pF)、高响应(0.5 a /W,无AR涂层)InGaAs/InP反相msm在Si CMOS差分接收电路上的混合集成。该集成接收器在414 Mbps时的误码率为10/sup -11/,在480 Mbps时的误码率为0.1/spl /10/sup -10/。对该接收机在200mbps下的对准公差进行了建模和测量,理论结果与实验数据吻合较好。
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