Hybrid GaAs MQW modulators and detectors flip-chip bonded to silicon CMOS circuitry

Abstract

We demonstrated the hybrid integration of reflection-mode, surface-normal GaAs/AlGaAs MQW modulator and detector array directly over 1 /spl mu/m silicon CMOS circuitry via flip-chip solder bonding. Some MQW devices were used as input-light detectors and others served as output-light modulators, which were designed for 850 nm wavelength operation. The GaAs/AlGaAs MQW structure was grown by molecular beam epitaxy. In order to increase the absorption of the intrinsic region, the period of quantum wells was chosen to be 90 pairs and decreased the thickness of AlGaAs barriers for decreasing for operation voltage.