2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) PART 2最新文献

Evaluating dynamic maximum power point tracking with variable solar irradiance 用可变太阳辐照度评价动态最大功率点跟踪

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) PART 2 Pub Date : 2013-06-16 DOI: 10.1109/PVSC-VOL2.2013.7179250

M. Huque, S. Coley, T. Key

引用次数: 1

Improved bandgap-voltage offset in InGaAs/InAlGaAs quantum well solar cells 改进的InGaAs/InAlGaAs量子阱太阳能电池带隙电压偏移

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) PART 2 Pub Date : 2013-06-16 DOI: 10.1109/PVSC-VOL2.2013.7179244

C. Bailey, M. Lumb, D. Forbes, M. Yakes, M. González, S. Hubbard, R. Hoheisel, L. Hirst, J. Tischler, I. Vurgaftman, J. Meyer, R. Walters

引用次数: 4

Towards an optimized emitter for screen-printed solar cells 面向丝网印刷太阳能电池的优化发射器

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) PART 2 Pub Date : 2013-06-16 DOI: 10.1109/PVSC-VOL2.2013.7179243

A. Dastgheib-Shirazi, G. Micard, H. Wagner, M. Steyer, P. Altermatt, G. Hahn

{"title":"Towards an optimized emitter for screen-printed solar cells","authors":"A. Dastgheib-Shirazi, G. Micard, H. Wagner, M. Steyer, P. Altermatt, G. Hahn","doi":"10.1109/PVSC-VOL2.2013.7179243","DOIUrl":"https://doi.org/10.1109/PVSC-VOL2.2013.7179243","url":null,"abstract":"The determination of suitable process parameters for POCl3 diffusion, with the aim of minimizing emitter recombination and obtaining satisfactory contactability of the homogeneous emitter, is the aim of this study. It can be shown that different emitters with low Rsheet<; 60 Ω/sq can result in significantly different emitter saturation current densities. Regarding the screen-printing metallization procedure, we observe that the resistance of a semiconductor-metal contact can vary on different emitters despite of the same sheet resistance. In this study, the relevant process parameters for emitter optimization using POCl3-diffusion were determined with the help of a design of experiment (DoE). Thus, it is also possible to find optimized diffusion parameters without increasing the sheet resistance of the optimized emitter. To verify the efficiency potential of the emitter, a standard industrial solar cell process is applied, and the outcome is compared with results from simulations using Sentaurus Device. A significant increase in efficiency can be reached, with open circuit voltages >640 mV and average efficiencies well above 19%.","PeriodicalId":413736,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) PART 2","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123260221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Field installation and evaluation of a 20kw rooftop PV system using 3.5kw string level MPPT DC/DC converters and a central inverter 采用3.5kw串级MPPT DC/DC变换器和中央逆变器的20kw屋顶光伏系统的现场安装和评估

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) PART 2 Pub Date : 2013-06-16 DOI: 10.1109/PVSC-VOL2.2013.7179253

A. Elasser, M. Agamy, M. H. Todorovic, S. Chi, A. McCann, Li Zhang, Lei Wang, F. Tao, Bex Thomas, J. Sabate, R. Bahadur, F. Mueller, Brian K Baxter, Brian Smith, John Dodge, S. Gonzalez, A. Fresquez

{"title":"Field installation and evaluation of a 20kw rooftop PV system using 3.5kw string level MPPT DC/DC converters and a central inverter","authors":"A. Elasser, M. Agamy, M. H. Todorovic, S. Chi, A. McCann, Li Zhang, Lei Wang, F. Tao, Bex Thomas, J. Sabate, R. Bahadur, F. Mueller, Brian K Baxter, Brian Smith, John Dodge, S. Gonzalez, A. Fresquez","doi":"10.1109/PVSC-VOL2.2013.7179253","DOIUrl":"https://doi.org/10.1109/PVSC-VOL2.2013.7179253","url":null,"abstract":"High energy yield has been and continues to be a major driver in PV installations. With the continuous improvement in PV modules' performance, there is a need to extract as much power as possible from the modules under various weather conditions. Over the past three years, we proposed, analyzed, built, installed, and monitored a PV system with string level MPPT dc/dc converters and a central inverter to understand and quantify the benefits of distributed MPPT. Our team performed detailed simulation studies on multiple architectures (module level to multi-string level MPPT), quantified the benefits of each architecture, selected an approach (string level), and designed a novel high efficiency partial power dc/dc converter, built it and tested it in the lab (with a PV emulator) and in the field with actual PV strings and a grid tied inverter. A rooftop installation was built with two systems side by side (a distributed and a central inverter) and has been monitored over the past 9 months.","PeriodicalId":413736,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) PART 2","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128681940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Energy yield of thin-film PV modules and the relevance of low irradiance, spectral and temperature effects 薄膜光伏组件的能量产率与低辐照度、光谱和温度效应的相关性

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) PART 2 Pub Date : 2013-06-16 DOI: 10.1109/PVSC-VOL2.2013.7179241

M. Schweiger, U. Jahn, W. Herrmann, A. Gerber, C. Ulbrich, U. Rau

{"title":"Energy yield of thin-film PV modules and the relevance of low irradiance, spectral and temperature effects","authors":"M. Schweiger, U. Jahn, W. Herrmann, A. Gerber, C. Ulbrich, U. Rau","doi":"10.1109/PVSC-VOL2.2013.7179241","DOIUrl":"https://doi.org/10.1109/PVSC-VOL2.2013.7179241","url":null,"abstract":"The electrical performance and energy yield of 25 PV modules were studied in the laboratory and under moderate climate conditions. The study compares thin-film technologies (a-Si, a-Si/μc-Si, a-Si/a-Si, CIS, CIGS and CdTe) and crystalline silicon technologies (mono- and polycrystalline). Intensive laboratory tests were performed before and after the outdoor exposure with regard to low irradiance behavior as well as sensitivity to spectrum and module temperature. Measurements according to IEC 61853-1 provide information about the nonlinear behavior of thin-film modules in respect to irradiance and temperature. The spectral response was determined in the module plane according to IEC 60904-8. Combining the measured spectral response and the measured spectral solar irradiance data, an automated spectral mismatch correction could be implemented to improve monitoring. Additionally, the average photon energy factor was used to determine the dependency of the photo current on spectral shifts for the module technologies under investigation. In a final ranking the energy yield of all tested specimens is compared and the influence of spectrum, temperature and low irradiance behavior on the energy yield is quantified for moderate climate conditions.","PeriodicalId":413736,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) PART 2","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131082161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Humidity degradation and repair of ALD Al2O3 passivated silicon ALD Al2O3钝化硅的湿度降解及修复

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) PART 2 Pub Date : 2013-06-16 DOI: 10.1109/PVSC-VOL2.2013.7179245

Wensheng Liang, K. Weber, D. Suh, Jun Yu, J. Bullock

{"title":"Humidity degradation and repair of ALD Al2O3 passivated silicon","authors":"Wensheng Liang, K. Weber, D. Suh, Jun Yu, J. Bullock","doi":"10.1109/PVSC-VOL2.2013.7179245","DOIUrl":"https://doi.org/10.1109/PVSC-VOL2.2013.7179245","url":null,"abstract":"The effect of humidity on boron diffused and undiffused silicon samples passivated by aluminum oxide (Al2O3) synthesized by plasma-assisted atomic layer deposition (PA-ALD) has been investigated. We found that undiffused samples show a higher degradation rate than diffused samples. Under an ambient of 100% relative humidity and 50°C, the lifetime of an undiffused sample passivated by Al2O3 decreased from 1500 to 400μs after 28 hours of exposure, whereas the saturation current density of the diffused region Jop+ of a boron diffused sample was nearly unchanged after 7 days of exposure. As expected, for both diffused and undiffused samples, the degradation rate is accelerated by increasing the temperature of the humidity environment. A PECVD SiNx, capping layer acts as an effective protection layer for Al2O3 to resist a damp-heat conditions of 100% relatively humidity at 80°C. The electrical resistance of PA-ALD Al2O3 was observed to degrade in humidity. Fourier Transform Infra-red Spectroscopy (FTIR) measurements indicate that damp heat results in a structural modification of the bulk Al2O3 film and the formation of AlO(OH). This change could be responsible for the fast degradation rate of PA-ALD Al2O3 passivation compared with SiO2. Finally, we experimentally demonstrated that the degraded passivation of an Al2O3 layer can be repaired by light illumination and negative corona charge deposition.","PeriodicalId":413736,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) PART 2","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121120277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Impurities through the silicon solar cell value chain 杂质通过硅太阳能电池价值链

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) PART 2 Pub Date : 2013-06-16 DOI: 10.1109/PVSC-VOL2.2013.7179240

M. di Sabatino, G. Tranell, E. Ovrelid

引用次数: 2

Charged particle radiation effects on flexible a-Si/a-SiGe/a-SiGe triple junction solar cells for space use 空间用柔性a-Si/a-SiGe/a-SiGe三结太阳能电池的带电粒子辐射效应

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) PART 2 Pub Date : 2013-06-16 DOI: 10.1109/PVSC-VOL2.2013.7179251

Shin‐ichiro Sato, K. Beernink, T. Ohshima

引用次数: 3

Degradation kinetics of amorphous silicon solar cells processed at high pressure and its relation to the nanostructure 非晶硅太阳能电池高压降解动力学及其与纳米结构的关系

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) PART 2 Pub Date : 2013-06-16 DOI: 10.1109/PVSC-VOL2.2013.7179246

M. Fischer, Robin J. V. Quax, M. Zeman, A. Smets

{"title":"Degradation kinetics of amorphous silicon solar cells processed at high pressure and its relation to the nanostructure","authors":"M. Fischer, Robin J. V. Quax, M. Zeman, A. Smets","doi":"10.1109/PVSC-VOL2.2013.7179246","DOIUrl":"https://doi.org/10.1109/PVSC-VOL2.2013.7179246","url":null,"abstract":"In this study it is revealed that the light induced defects (LIDs) responsible for the fast degradation of hydrogenated amorphous silicon (a-Si:H) solar cells under light soaking are located at nanosized voids. This important breakthrough in identifying the local environment of LIDs has been achieved by detailed study of the relation between the nanostructure of a-Si:H and metastability of corresponding solar cell devices under light soaking. We propose that a useful tool to define the nanostructure of a-Si:H is to determine the size distribution of the volume deficiencies, which range from small hydrogenated vacancies up to nanosized voids. The processing window used to vary and control the nanostructure in dense a-Si:H is based on a hydrogen rich plasma at unconventional high processing pressures (~10 mbar). The dense absorber layers with different distributions of volume deficiencies are subsequently incorporated in solar cell devices. For the first time a clear relation between nanostructures of the a-Si:H absorber layer and the fast kinetics of the metastable LIDs of the solar cell during light soaking and thermal annealing is observed. The `fast' degradation (first 10 hours of light soaking) strongly correlates to the density of largest volume deficiencies in the a-Si:H matrix. The “slow” regime (10 tot 1000 hours of light soaking) appears to be independent on the nanostructure of the absorber layer. In addition, the fast metastable defect states are the first ones to be annealed out at relative low annealing temperatures (120-130 C). Although solar cells processed at higher pressure have the same long term degradation kinetics, their FF recovers much faster by thermal annealing when compared to the cells processed at standard low pressure and low hydrogen dilution conditions.","PeriodicalId":413736,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) PART 2","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130712293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

Improved dislocation model for silicon solar cells: Calculation of dark current 改进的硅太阳能电池位错模型:暗电流的计算

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) PART 2 Pub Date : 2013-06-16 DOI: 10.1109/PVSC-VOL2.2013.7179249

Vinay Budhreja, B. Sopori, N. Ravindra, D. Misra

引用次数: 0