Improved dislocation model for silicon solar cells: Calculation of dark current

Abstract

We have extended a previous dislocation model to include the effect of front and back surface recombination velocities in a silicon solar cell. This improved dislocation model uses Green's Function approach to solve three dimensional continuity equation in p and n layer of solar cell. Expressions for saturation current components are derived for different dislocation densities and compared with published experimental results. The modeling results also show the variation of cell parameters with dislocation density.