2017 IEEE International Electron Devices Meeting (IEDM)最新文献

A novel triboelectric nanogenerator with high performance and long duration time of sinusoidal current generation 一种高性能、长时间正弦电流产生的新型摩擦电纳米发电机

2017 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2017-12-06 DOI: 10.1109/IEDM.2017.8268526

Weon‐Guk Kim, Daewon Kim, Seung‐Bae Jeon, Sang-Jae Park, Il-Woong Tcho, H. Bae, H. Im, Yang-Kyu Choi

引用次数: 0

NbO2 based threshold switch device with high operating temperature (>85°C) for steep-slope MOSFET (∼2mV/dec) with ultra-low voltage operation and improved delay time 基于NbO2的阈值开关器件，具有高工作温度(>85°C)，用于陡坡MOSFET (~ 2mV/dec)，具有超低电压工作和改进的延迟时间

2017 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2017-12-05 DOI: 10.1109/IEDM.2017.8268449

Jaehyuk Park, Dongwook Lee, Jongmyung Yoo, H. Hwang

{"title":"NbO2 based threshold switch device with high operating temperature (>85°C) for steep-slope MOSFET (∼2mV/dec) with ultra-low voltage operation and improved delay time","authors":"Jaehyuk Park, Dongwook Lee, Jongmyung Yoo, H. Hwang","doi":"10.1109/IEDM.2017.8268449","DOIUrl":"https://doi.org/10.1109/IEDM.2017.8268449","url":null,"abstract":"To realize a steep slope field-effect transistor (FET) with low leakage current and controllable operating bias, NbO2 threshold switching (TS) device is connected in series with the gate side of a MOSFET. Thanks to the TS device showing abrupt transition between the OFF and ON states at threshold voltage (Vth), the implemented transistor exhibits extremely low leakage current (10<sup>−7</sup>μA/μm), high I<inf>on</inf>/I<inf>off</inf> ratio (>10<sup>6</sup>), sub-2 mV/dec subthreshold swing, drift-free characteristic and high temperature operation (>85°C). Furthermore, since the Vth is tunable by controlling thickness of the NbO<inf>2</inf> TS device, the new NbO<inf>2</inf>-MOSFET can fulfill various demands of operating bias conditions. In addition, we confirmed through a simulation that the CMOS inverter with NbO<inf>2</inf> connected to the gate side showed fast inverting speed of over 300 MHz at ultra-low voltage (<0.3V), improved propagation delay time by x3.0 and reduced operation V<inf>d</inf> (ΔV>200mV).","PeriodicalId":412333,"journal":{"name":"2017 IEEE International Electron Devices Meeting (IEDM)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129758917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 11

Lab on skin™: 3D monolithically integrated zero-energy micro/nanofludics and FD SOI ion sensitive FETs for wearable multi-sensing sweat applications 皮肤实验室™:用于可穿戴多传感汗液应用的3D单片集成零能量微/纳米流体和FD SOI离子敏感场效应管

2017 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2017-12-05 DOI: 10.1109/IEDM.2017.8268413

F. Bellando, E. Garcia-Cordero, F. Wildhaber, J. Longo, H. Guérin, Adrian M. Ionescu

{"title":"Lab on skin™: 3D monolithically integrated zero-energy micro/nanofludics and FD SOI ion sensitive FETs for wearable multi-sensing sweat applications","authors":"F. Bellando, E. Garcia-Cordero, F. Wildhaber, J. Longo, H. Guérin, Adrian M. Ionescu","doi":"10.1109/IEDM.2017.8268413","DOIUrl":"https://doi.org/10.1109/IEDM.2017.8268413","url":null,"abstract":"This paper reports a novel fully integrated low power multi-sensing smart system, which, by wafer-level 3D heterogeneous integration of Ion Sensitive Fully Depleted (FD) FETs and SU-8 micro/nanofludics, achieves the first of its kind wearable multi-sensing system, called Lab on SkinTM, capable to detect biomarkers in human sweat. In the reported configuration, the multi-sensing system exploits arrays of functionalized sensors capable to simultaneously detect pH, Na+ and K+ concentrations in sweat in real time. We present a detailed electrical DC and dynamic characterization, showing excellent sensitivities (52mV/dec for pH and −37mV/dec for Na+ sensors) with ultra-low power consumption (less than 50 nWatts/sensor). We report ion cross-sensitivities and a differential measurement approach that allows calibrated measurements. Overall, the paper reports significant advances in the design and fabrication of micro/nanofludics channels, inlets compatible with human skin pore size and density, and outlet passive pumps with flow rates of tens of pl/s; all capable of exploiting capillary forces in order to provide a zero energy pumping of sweat into sensing channels. Moreover, we report the first integration of a miniaturized Ag/AgCl Quasi-Reference Electrodes (QRE) into the sensing system, with long term stability, paving the way for fully wearable electronic chips in flexible patches or as plug-in modules in wrist based devices.","PeriodicalId":412333,"journal":{"name":"2017 IEEE International Electron Devices Meeting (IEDM)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114671592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Time-dependent variability in RRAM-based analog neuromorphic system for pattern recognition 基于随机存储器的模式识别模拟神经形态系统的时变特性

2017 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2017-12-04 DOI: 10.1109/IEDM.2017.8268340

Jian Kang, Zhizhen Yu, Lindong Wu, Yichen Fang, Zongwei Wang, Yimao Cai, Zhigang Ji, Jianfu Zhang, Runsheng Wang, Yuchao Yang, Ru Huang

引用次数: 32

Energy-efficient all fiber-based local body heat mapping circuitry combining thermistor and memristor for wearable healthcare device 结合热敏电阻和忆阻器的可穿戴医疗设备的节能全纤维局部人体热成像电路

2017 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2017-12-04 DOI: 10.1109/IEDM.2017.8268416

H. Bae, Weon‐Guk Kim, Hongkeun Park, Seung‐Bae Jeon, Soo-ho Jung, H. Lee, Myung-Su Kim, Il-Woong Tcho, Byung Chul Jang, H. Im, Sung‐Yool Choi, S. Im, Yang‐Kyu Choi

{"title":"Energy-efficient all fiber-based local body heat mapping circuitry combining thermistor and memristor for wearable healthcare device","authors":"H. Bae, Weon‐Guk Kim, Hongkeun Park, Seung‐Bae Jeon, Soo-ho Jung, H. Lee, Myung-Su Kim, Il-Woong Tcho, Byung Chul Jang, H. Im, Sung‐Yool Choi, S. Im, Yang‐Kyu Choi","doi":"10.1109/IEDM.2017.8268416","DOIUrl":"https://doi.org/10.1109/IEDM.2017.8268416","url":null,"abstract":"This study demonstrated a wearable and flexible temperature sensing circuitry for a diagnosis of skin temperature. This system is based on a novel carbon nanotubes (CNTs)-based temperature sensor (CTS) array, built on cotton yarn using a mixture of multi-walled (MW)-CNTs and PDMS (polydimethylsiloxane). To divide and select the unit thermistors, a memristor which operates in the normally-off state was utilized. To construct the memristors, an Al precursor-based solution dip coating method and initiated chemical vapor deposition (iCVD) were employed for the metal electrode and resistive switching layer (RSL), respectively. Using the aforementioned processes, aluminum (Al) electrode and poly (ethylene glycol methacrylate, pEGDMA)-RSL layers were deposited on a cotton yarn backbone. A unit temperature sensor based on the proposed circuitry was fabricated by intersecting the Al/pEGDMA-coated yarns to both sides of the CTS wire, while forming a 1-thermistor and 2-memristor (1T-2M). This architecture exhibited promising performance as a sensor-array system for a fully fabric-based wearable healthcare device.","PeriodicalId":412333,"journal":{"name":"2017 IEEE International Electron Devices Meeting (IEDM)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126473118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Time-resolved quantum transport for optoelectronics 光电子学中的时间分辨量子输运

2017 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2017-12-02 DOI: 10.1109/IEDM.2017.8268478

F. Michelini, K. Beltako, M. Bescond, N. Cavassilas, L. Raymond

引用次数: 0

Novel approach for nano-patterning magnetic tunnel junctions stacks at narrow pitch: A route towards high density STT-MRAM applications 窄间距纳米磁性隧道结堆叠的新方法:通往高密度STT-MRAM应用的途径

2017 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2017-12-02 DOI: 10.1109/IEDM.2017.8268517

V. Nguyen, P. Sabon, J. Chatterjee, L. Tille, P. Coelho, S. Auffret, R. Sousa, L. Prejbeanu, E. Gautier, L. Vila, B. Dieny

引用次数: 9

200V, 4MV/cm lateral diamond MOSFET 200V, 4MV/cm横向金刚石MOSFET

2017 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2017-12-02 DOI: 10.1109/IEDM.2017.8268458

T. Pham, J. Pernot, C. Masante, D. Eon, E. Gheeraert, G. Chicot, F. Udrea, N. Rouger

引用次数: 15

In-depth investigation of programming and reading operations in RRAM cells integrated with Ovonic Threshold Switching (OTS) selectors 深入研究与卵形阈值开关(OTS)选择器集成的RRAM单元的编程和读取操作

2017 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2017-12-02 DOI: 10.1109/IEDM.2017.8268311

M. Alayan, E. Vianello, G. Navarro, C. Carabasse, S. L. Barbera, A. Verdy, N. Castellani, A. Levisse, G. Molas, L. Grenouillet, T. Magis, F. Aussenac, M. Bernard, B. Desalvo, J. Portal, E. Nowak

引用次数: 14

Direct characterization of circulating DNA in blood plasma using μLAS technology 应用μLAS技术直接表征血浆循环DNA

2017 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2017-12-02 DOI: 10.1109/IEDM.2017.8268465

R. Malbec, B. Chami, H. T. M. Ngo, A. Didelot, F. Garlan, S. Garrigou, V. Taly, Lorène Aeschbach, Evgeniya Trofimenko, Vincent Dion, A. Boutonnet-Rodat, F. Ginot, A. Bancaud

引用次数: 1