NbO2 based threshold switch device with high operating temperature (>85°C) for steep-slope MOSFET (∼2mV/dec) with ultra-low voltage operation and improved delay time

2017 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2017-12-05 DOI:10.1109/IEDM.2017.8268449

Jaehyuk Park, Dongwook Lee, Jongmyung Yoo, H. Hwang

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引用次数: 11

Abstract

To realize a steep slope field-effect transistor (FET) with low leakage current and controllable operating bias, NbO2 threshold switching (TS) device is connected in series with the gate side of a MOSFET. Thanks to the TS device showing abrupt transition between the OFF and ON states at threshold voltage (Vth), the implemented transistor exhibits extremely low leakage current (10⁻⁷μA/μm), high Ion/Ioff ratio (>10⁶), sub-2 mV/dec subthreshold swing, drift-free characteristic and high temperature operation (>85°C). Furthermore, since the Vth is tunable by controlling thickness of the NbO2 TS device, the new NbO2-MOSFET can fulfill various demands of operating bias conditions. In addition, we confirmed through a simulation that the CMOS inverter with NbO2 connected to the gate side showed fast inverting speed of over 300 MHz at ultra-low voltage (<0.3V), improved propagation delay time by x3.0 and reduced operation Vd (ΔV>200mV).

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基于NbO2的阈值开关器件，具有高工作温度(>85°C)，用于陡坡MOSFET (~ 2mV/dec)，具有超低电压工作和改进的延迟时间

为了实现低漏电流、工作偏置可控的陡坡场效应晶体管(FET)，将NbO2阈值开关(TS)器件串联在MOSFET的栅极侧。由于TS器件在阈值电压(Vth)下显示OFF和ON状态的突变，所实现的晶体管具有极低的泄漏电流(10−7μA/μm)，高离子/ OFF比(>06)，低于2 mV/dec的亚阈值摆幅，无漂移特性和高温工作(>85°C)。此外，由于Vth可以通过控制NbO2 TS器件的厚度来调节，因此新型NbO2- mosfet可以满足各种工作偏置条件的要求。此外，我们通过仿真证实，在超低电压(d (ΔV>200mV))下，将NbO2连接到栅极侧的CMOS逆变器显示出超过300 MHz的快速反相速度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2017 IEEE International Electron Devices Meeting (IEDM)

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