2018 IEEE SENSORS最新文献_第10页

Optimizing Camera Placement Based on Task Modeling 基于任务建模的摄像机布局优化

2018 IEEE SENSORS Pub Date : 2018-10-01 DOI: 10.1109/ICSENS.2018.8630281

A. A. Altahir, V. Asirvadam, N. H. Hamid, P. Sebastian, N. Saad, S. Dass

引用次数: 4

A Smart Temperature Sensor and Controller for Bioelectronic Implants 用于生物电子植入物的智能温度传感器和控制器

2018 IEEE SENSORS Pub Date : 2018-10-01 DOI: 10.1109/ICSENS.2018.8589651

Arnab Banerjee, T. K. Bhattacharyya, S. Nag

{"title":"A Smart Temperature Sensor and Controller for Bioelectronic Implants","authors":"Arnab Banerjee, T. K. Bhattacharyya, S. Nag","doi":"10.1109/ICSENS.2018.8589651","DOIUrl":"https://doi.org/10.1109/ICSENS.2018.8589651","url":null,"abstract":"Bioelectronic implants have advanced significantly to aid in prostheses and rehabilitation, such as for sensory and motor functions restoration. These implants mainly constitute wireless power transfer, biopotential sensing or electrical stimulation, which invite the risk of localized heating surrounding the implanted hardware. In this paper, a smart $pmb{0.18} mu mathbf{m}$ CMOS technology based implantable temperature sensor has been proposed that can be incorporated alongside an implant. The sensor instinctively responds to an unusual temperature fluctuation near the implant and can shut down the system automatically so as to passively regain normal body temperature. The sensor chip has been designed to operate in the region of $pm pmb{1} ^{circ}mathbf{C}$ from base temperature of 37°C (normal human body temperature). The system operates on the basic principle of difference in temperature coefficient between two types of resistor. The proposed sensor consumes only $pmb{10} mu mathbf{A}$ current at 2.4 V supply voltage. The sensor has shown reliable performance for simulation process corners and can operate over a wide DC supply voltage range of 2.4 V to 3.6 V.","PeriodicalId":405874,"journal":{"name":"2018 IEEE SENSORS","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114007180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Modeling and Fabrication Aspects of PVDF as a Membrane Material for Air Borne PMUT Applications PVDF作为机载PMUT膜材料的建模和制造方面

2018 IEEE SENSORS Pub Date : 2018-10-01 DOI: 10.1109/ICSENS.2018.8589809

Lisa Sarkar, J. Joseph, S. Singh, S. Vanjari

引用次数: 2

Characterization of Field Asymmetric Ion Mobility Spectrometry Response to Binary Gas Mixture 场不对称离子迁移率光谱对二元气体混合物响应的表征

2018 IEEE SENSORS Pub Date : 2018-10-01 DOI: 10.1109/ICSENS.2018.8589749

Y. Yokoshiki, T. Nakamoto

引用次数: 1

Immunity to Temperature Fluctuations in Weakly Coupled MEMS Resonators 弱耦合MEMS谐振器对温度波动的抗扰性

2018 IEEE SENSORS Pub Date : 2018-10-01 DOI: 10.1109/ICSENS.2018.8589869

Milind S. Pandit, Chun Zhao, G. Sobreviela, A. Seshia

引用次数: 11

A New Type of Bionics Based Piezoelectric Heartbeat Sensor Used in Pulse-Taking for Health Warning 一种用于健康预警脉搏测量的新型仿生压电心跳传感器

2018 IEEE SENSORS Pub Date : 2018-10-01 DOI: 10.1109/ICSENS.2018.8589641

Meining Ji, Xiaofeng Meng, J. Nie, Yaqin Wang, Liwei Lin

{"title":"A New Type of Bionics Based Piezoelectric Heartbeat Sensor Used in Pulse-Taking for Health Warning","authors":"Meining Ji, Xiaofeng Meng, J. Nie, Yaqin Wang, Liwei Lin","doi":"10.1109/ICSENS.2018.8589641","DOIUrl":"https://doi.org/10.1109/ICSENS.2018.8589641","url":null,"abstract":"This work demonstrates a novel bionics-based heartbeat sensor combined with approximate entropy (ApEn) algorithm for health warning. The design of the proposed sensor was inspired by pulse-taking therapy in traditional Chinese medicine (TCM). A flexible piezoelectric film was adhered to a wooden cylinder to simulate the structure of the finger to achieve pulse-taking. The simulation of piezoelectric film under different force area and bending degree was realized by ANSYS. The results showed that the sensor structure proposed in this paper can not only simulate the characteristics of the finger to achieve the TCM pulse-taking, but also improve the sensitivity of piezoelectric film. The sensor was used to measure the pulse signal of human under different states of motion and different health conditions. Then the sample data were analyzed using the ApEn. The results showed that the ApEn value is 0.1 can be used as a threshold for judging and predicting human health status. The experiment proved that this method can avoid the requirement of the same force in the traditional pulse-taking. It not only can obtain the low distortion pulse signal, but also can obtain the heart rate accurately. Using this method can quickly achieve rapid detection and early warning of human health.","PeriodicalId":405874,"journal":{"name":"2018 IEEE SENSORS","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133171883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Curve-Shaped Anchor for Durability and Efficiency Improvement of Piezoelectric MEMS Energy Harvesters 提高压电MEMS能量采集器耐用性和效率的曲线型锚

2018 IEEE SENSORS Pub Date : 2018-10-01 DOI: 10.1109/ICSENS.2018.8589817

Seyedfakhreddin Nabavi, Lihong Zhang

引用次数: 12

A Finite Element Method Based Approach of Modeling of a Piezoresistive Accelerometer by Incorporating Doping Profile of a Diffused Resistor 采用扩散电阻掺杂谱的压阻式加速度计有限元建模方法

2018 IEEE SENSORS Pub Date : 2018-10-01 DOI: 10.1109/ICSENS.2018.8589691

K. Meena, R. Mathew, A. Sankar

{"title":"A Finite Element Method Based Approach of Modeling of a Piezoresistive Accelerometer by Incorporating Doping Profile of a Diffused Resistor","authors":"K. Meena, R. Mathew, A. Sankar","doi":"10.1109/ICSENS.2018.8589691","DOIUrl":"https://doi.org/10.1109/ICSENS.2018.8589691","url":null,"abstract":"Finite element analysis (FEA) is an efficient method to observe the behavior of a sensor and to optimize the design to achieve high performance. In the modeling of piezoresistive sensors, typical FEA techniques simplify the doping concentration as a constant profile throughout the junction depth of a piezoresistor. This approximation overestimates or underestimates the performance of the modeled device from the actual fabricated device. In this paper, a two-step modeling of piezoresistive sensors by incorporating nonuniformly doped piezoresistor is presented using TCAD TSUPREM4® and IntelliSuite® tools to achieve lower deviation between simulation and experimental results. The two-step modeling technique illustrates the method of choosing the number of slices and the slicing strategy to effectively model the uniform doping profile of a piezoresistor. A quad-beam proof-mass aligned piezoresistive accelerometer is considered for the validation of the modeling method by comparing the simulated results with the fabrication results. From the results, it is observed that the proposed adaptive slicing method with more slices at the surface of the piezoresistor provides the least deviation error of 5.43 %.","PeriodicalId":405874,"journal":{"name":"2018 IEEE SENSORS","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132295010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Characteristics of a Ce-Doped Silica Fiber Irradiated by a Neutron Field Up to 400 MeV 400 MeV中子场辐照掺铈二氧化硅光纤的特性

2018 IEEE SENSORS Pub Date : 2018-10-01 DOI: 10.1109/ICSENS.2018.8589510

N. Savard, M. Dehnel, C. Hoehr

引用次数: 1

A System-Level Simulation Approach for Analyzing MEMS Gyroscope Manufacture Error MEMS陀螺仪制造误差分析的系统级仿真方法

2018 IEEE SENSORS Pub Date : 2018-10-01 DOI: 10.1109/ICSENS.2018.8589823

Bowen Xing, Rui Li, Zhihui Lin, Qi Wei, Bin Zhou, Rong Zhang

引用次数: 1