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2019 8th International Symposium on Next Generation Electronics (ISNE)最新文献

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Research on Heavy Haul Railway Network State Based on Dynamic Function 基于动态函数的重载铁路网络状态研究
2019 8th International Symposium on Next Generation Electronics (ISNE) Pub Date : 2019-10-01 DOI: 10.1109/ISNE.2019.8896367
Jiaming Fan, Jianping Fan, Liu Feng, Jiantao Qu
{"title":"Research on Heavy Haul Railway Network State Based on Dynamic Function","authors":"Jiaming Fan, Jianping Fan, Liu Feng, Jiantao Qu","doi":"10.1109/ISNE.2019.8896367","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896367","url":null,"abstract":"The Shuohuang railway (the heavy-haul technologies) Wireless Broadband Communication System (LTE-R) is a new application of 4G network standard TD-LTE technology in the field of railways. It is also the first time in the world that the heavy haul railway is implemented. LTE-R provides more broadband, more information, safer management, more convenient service and more rapid information management for the transportation and work service of each department of Shuohuang railway. However, the coverage of the LTE-R network in a pipe section of the Shuohuang railway is complicated and the operation and maintenance of the wireless network are difficult. How to ensure the coverage of LTE-R system network security, to the professional maintenance personnel put forward higher requirements, to achieve this goal, we must continue to optimize the network, this paper proposes the use of a dynamic function to solve the problem of network coverage of ping-pang switching, by introducing a dynamic elliptic function to optimize LTE-R system network coverage handover problem. The simulation results show that the improved algorithm can effectively guarantee the success rate of handover compared with the current handover algorithm. Which is of great significance to improve the security of the network. The content of this research has considerable theoretical and practical guiding value in the application of network coverage switching in the complex terrain of heavy-haul railway.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131185525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance Evaluation of Photovoltaic System under Harsh Field Conditions 恶劣野外条件下光伏系统性能评价
2019 8th International Symposium on Next Generation Electronics (ISNE) Pub Date : 2019-10-01 DOI: 10.1109/ISNE.2019.8896689
Guancong Liu, Hang Song, Xia Xiao, Haiyang Qi, Derong Cao, Shuming Zhao
{"title":"Performance Evaluation of Photovoltaic System under Harsh Field Conditions","authors":"Guancong Liu, Hang Song, Xia Xiao, Haiyang Qi, Derong Cao, Shuming Zhao","doi":"10.1109/ISNE.2019.8896689","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896689","url":null,"abstract":"Power generation performance is very important for photovoltaic power generation equipment. When the equipment is laid on a large area, small difference in power generation performance with one panel will have a large influence on the total generated power, which may lead to economic loss and has a profound impact. In order to evaluate the performance of the photovoltaic equipment in harsh field conditions, a test system is proposed in this paper. After testing, the reliability of the test system is verified, and the influence of different type of harsh conditions on the power generation is investigated and discussed.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134102065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The Cascade Improved Model Based Deep Forest for Small-scale Datasets Classification 基于级联改进模型的深度森林小尺度数据集分类
2019 8th International Symposium on Next Generation Electronics (ISNE) Pub Date : 2019-10-01 DOI: 10.1109/ISNE.2019.8896445
Yimin Fan, L. Qi, Y. Tie
{"title":"The Cascade Improved Model Based Deep Forest for Small-scale Datasets Classification","authors":"Yimin Fan, L. Qi, Y. Tie","doi":"10.1109/ISNE.2019.8896445","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896445","url":null,"abstract":"It is very important to classify some small-scale datasets accurately in biology. With the rapid advancement of classification models, support vector machine(SVM), Random Forest(RF), Deep Forest, Convolutional Neural Networks(CNNs) are widely used. However, for small-scale datasets, CNNs always need massive datasets to train. Other methods usually can’t achieve better effects. Therefore, in this paper, a new forest model is proposed to solve the problems in small-scale datasets. It improves the classification performance through integrated learning method. The improved model is different from the primitive model in two important aspects. Firstly, considering the fitting quality of every forest, the standard deviation of some most major features in every forest make up a new feature to be transport in the next cascade layer. Secondly, the sub-layer structure is adapted to the cascade layer to increase the training opportunities. Experiments on five datasets demonstrate that our method has better classification effect than other classification models in the small-scale datasets.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133088628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Scalable Modeling for the Coplanar Waveguide Step Discontinuity at Frequency up to 150 GHz 频率高达150 GHz的共面波导阶跃不连续的可扩展建模
2019 8th International Symposium on Next Generation Electronics (ISNE) Pub Date : 2019-10-01 DOI: 10.1109/ISNE.2019.8896359
Hao Sun, Jun Fu, Wenpu Cui, Tianling Ren, Linlin Liu, Wei Zhou, Quan Wang, Ao Guo
{"title":"Scalable Modeling for the Coplanar Waveguide Step Discontinuity at Frequency up to 150 GHz","authors":"Hao Sun, Jun Fu, Wenpu Cui, Tianling Ren, Linlin Liu, Wei Zhou, Quan Wang, Ao Guo","doi":"10.1109/ISNE.2019.8896359","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896359","url":null,"abstract":"In this manuscript, a new lumped equivalent-circuit model is proposed for the simulation of the coplanar waveguide (CPW) step discontinuity within the frequency range of 0 to 150 GHz. With the computer-aided modeling and appropriate parameter extraction method, the parameters can be extracted from electromagnetic (EM) simulations without any optimization. Furthermore, we also make the model scalable. Excellent agreement is obtained between the model data and electromagnetic simulations over a considerable range of frequencies and device geometries, which also verifies the validity of our model.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116433140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Compact Modeling for Double-Gate Junctionless MOSFET 双栅无结MOSFET的紧凑建模
2019 8th International Symposium on Next Generation Electronics (ISNE) Pub Date : 2019-10-01 DOI: 10.1109/ISNE.2019.8896479
Xinnan Lin, Wentao Li, H. Lou
{"title":"Compact Modeling for Double-Gate Junctionless MOSFET","authors":"Xinnan Lin, Wentao Li, H. Lou","doi":"10.1109/ISNE.2019.8896479","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896479","url":null,"abstract":"In this paper, a full range potential as well as current model is developed for the long channel and short channel double gate junctionless transistor, respectively. The Poisson’s equation and Pao-Sah’s double integral are used in the model derivation. Besides, the dynamic channel boundary is also taken into consideration in the short channel model to improve its accuracy. It shows that the model and simulation results are in good agreement over all operation regions for both kinds of devices. The new models provide a new reference for the circuit applications of double gate junctionless transistors in the future.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121517438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation of Poly-Silicon Thin Film Transistors with Negative Capacitance Effect 具有负电容效应的多晶硅薄膜晶体管的仿真
2019 8th International Symposium on Next Generation Electronics (ISNE) Pub Date : 2019-10-01 DOI: 10.1109/ISNE.2019.8896500
Z. Shang, Jun Ma, Wei-Dong Liu, Z. Zheng, Chun‐Hu Cheng
{"title":"Simulation of Poly-Silicon Thin Film Transistors with Negative Capacitance Effect","authors":"Z. Shang, Jun Ma, Wei-Dong Liu, Z. Zheng, Chun‐Hu Cheng","doi":"10.1109/ISNE.2019.8896500","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896500","url":null,"abstract":"In this work, we investigated the negative capacitance (NC) effect of ferroelectric HfAlO on the poly-silicon thin film transistor devices using high-$kappa$ HfO2 gate insulator by simulation. Excellent performances were achieved, including a high on-state drive current, a high Ion/Ioff of $gt10^{7}$ and a low subthreshold swing of 58 mV/dec. These enhanced performances were related to the strong ferroelectric polarization inducing NC effect to obtain excellent gate controllability.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127533046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of the Filter Amplifiers using the TVS Diode for ESD Protection 采用TVS二极管进行ESD保护的滤波放大器的研究
2019 8th International Symposium on Next Generation Electronics (ISNE) Pub Date : 2019-10-01 DOI: 10.1109/ISNE.2019.8896466
Yang Gao, Junchao Wang, S. M. Nawaz, Fan Zhang, Yuhuai Liu, J. Liou
{"title":"Investigation of the Filter Amplifiers using the TVS Diode for ESD Protection","authors":"Yang Gao, Junchao Wang, S. M. Nawaz, Fan Zhang, Yuhuai Liu, J. Liou","doi":"10.1109/ISNE.2019.8896466","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896466","url":null,"abstract":"This paper investigates the immunity and effect of a low-noise amplifier (LNA) using a transient voltage suppressor (TVS) diode for electro-static discharge (ESD) protection. The introduced off-chip ESD device, in our case a TVS diode, increases the power when the LNA fails, but also results in mismatch in terms of S-parameters and noise figure. It is especially obvious when frequencies rise higher. To overcome this side effect, the filter can be constructed, providing standard Chebyshev filter matching for the LNA. This method has certain reference value for the further research of semiconductor protection under ESD pulses.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116640987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
An Integrated Patch Antenna Array with Perfect Electromagnetic Immunity and Low RCS Property 一种具有良好电磁抗扰度和低RCS特性的集成贴片天线阵列
2019 8th International Symposium on Next Generation Electronics (ISNE) Pub Date : 2019-10-01 DOI: 10.1109/ISNE.2019.8896656
Jiaqi Feng, Li-Ming Si
{"title":"An Integrated Patch Antenna Array with Perfect Electromagnetic Immunity and Low RCS Property","authors":"Jiaqi Feng, Li-Ming Si","doi":"10.1109/ISNE.2019.8896656","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896656","url":null,"abstract":"In this paper, an integrated structure design is introduced by loading an ultrathin wideband metamaterial absorber to a 2×2 patch antenna array. The radiation character and radar cross section (RCS) property are analyzed using the finite element method. The result shows that there is little difference of the working frequency, matching performance, pattern and gain between the reference antenna and the designed antenna. However, the monostatic RCS has been efficiently reduced in a wide frequency range, with the maximum reduction reaching as much as 13dB.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121610499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
On the Issues of Subnanometer EOT Gate Dielectric Scaling 亚纳米EOT栅介电结垢问题研究
2019 8th International Symposium on Next Generation Electronics (ISNE) Pub Date : 2019-10-01 DOI: 10.1109/isne.2019.8896356
H. Wong, J. Liou, R. Wei
{"title":"On the Issues of Subnanometer EOT Gate Dielectric Scaling","authors":"H. Wong, J. Liou, R. Wei","doi":"10.1109/isne.2019.8896356","DOIUrl":"https://doi.org/10.1109/isne.2019.8896356","url":null,"abstract":"Only with a few generations after the introduction of high-dielectric constant (high-k) gate dielectric for equivalent oxide thickness (EOT) scaling, the scaling rate has lost its momentum already. The EOT of the state-of-the-art technology is in the range of 0.8 to 0.9 nm which is not much thinner than the tunneling silicon oxide used before the adoption of high-k or EOT strategy; it is predicted that the downsizing rate will be around 0.03 nm/generation only. There are some fundamental technological issues limit the subnanometer EOT scaling, not to mention there are lots of characteristic degradation and reliability issues for the adoption of high-k film. In this talk, we shall review the scaling trend and key technological advancements in CMOS gate dielectric scaling. Then the technological limitations due to the interface layers and surface roughness when the EOT approaching atomic scale/roughness scale will be discussed in detail.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125497005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characteristics of Impedance Change of Circular Coil Induced by Rebar 钢筋诱导圆形线圈阻抗变化特性研究
2019 8th International Symposium on Next Generation Electronics (ISNE) Pub Date : 2019-10-01 DOI: 10.1109/ISNE.2019.8896503
Ligang Liu
{"title":"Characteristics of Impedance Change of Circular Coil Induced by Rebar","authors":"Ligang Liu","doi":"10.1109/ISNE.2019.8896503","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896503","url":null,"abstract":"The closed form solutions to the coil impedance change are used to study the characteristics of the circular cover meter probe coil in this paper. The solutions are confirmed by experiment, and the measured data at different frequencies can be used to correct the relative permeability of the rebar and the lift-off (the least distance from the rebar surface to the bottom of the coil). The resistance change and the magnitude of the impedance change are increasing with an increase in rebar diameter, decreasing with an increase in lift-off. But the angle of the impedance change is decreasing with an increase in lift-off slightly, decreasing with an increase in rebar diameter dramatically. These characteristics of the impedance change of circular coil can be used to design cover meter and improve its performance.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125648263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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