具有负电容效应的多晶硅薄膜晶体管的仿真

2019 8th International Symposium on Next Generation Electronics (ISNE) Pub Date : 2019-10-01 DOI:10.1109/ISNE.2019.8896500

Z. Shang, Jun Ma, Wei-Dong Liu, Z. Zheng, Chun‐Hu Cheng

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引用次数: 0

摘要

本文通过仿真研究了高kappa HfO2栅极绝缘体对多晶硅薄膜晶体管器件的负电容效应。实现了优异的性能，包括高导通状态驱动电流，高离子/ off ($\gt10^{7}$)和58 mV/dec的低亚阈值摆幅。这些增强的性能与强铁电极化诱导NC效应有关，以获得优异的栅极可控性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Simulation of Poly-Silicon Thin Film Transistors with Negative Capacitance Effect

In this work, we investigated the negative capacitance (NC) effect of ferroelectric HfAlO on the poly-silicon thin film transistor devices using high-$\kappa$ HfO2 gate insulator by simulation. Excellent performances were achieved, including a high on-state drive current, a high Ion/Ioff of $\gt10^{7}$ and a low subthreshold swing of 58 mV/dec. These enhanced performances were related to the strong ferroelectric polarization inducing NC effect to obtain excellent gate controllability.

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2019 8th International Symposium on Next Generation Electronics (ISNE)

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