2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)最新文献_第6页

A 4 mm toroidal microtransformer built with wire bonding and MCM technologies 一个4毫米环形微变压器建立与线键合和MCM技术

2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2019-08-01 DOI: 10.1109/SBMicro.2019.8919297

F. Nascimento, A. Telles, M. M. Rocha, R. C. Teixeira

{"title":"A 4 mm toroidal microtransformer built with wire bonding and MCM technologies","authors":"F. Nascimento, A. Telles, M. M. Rocha, R. C. Teixeira","doi":"10.1109/SBMicro.2019.8919297","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919297","url":null,"abstract":"Manufacturing of small-scale magnetic devices is a subject that is not yet fully consolidated. Then the development process – design, fabrication and characterization – of microtransformers continues as object of studies for several applications. In this work it is presented the development and characterization steps of a four mm diameter toroidal microtransformer built using wire bonding and MultiChip Module (MCM) technologies. The device has a 19:1 turn ratio, with $31 mu mathrm{m}$ diameter aluminum wire bond around the top of a MnZn ferrite core. The wire bonds are connected to thin film gold tracks with $sim 3.5 mu mathrm{m}$ thickness at the bottom in order to complete the windings. The main parameters measured were the inductances and resistances of primary and secondary windings, and also the series-aiding and series-opposing inductances, all of them in the frequency range from 10 kHz to 2 MHz. With the results from those measurements the quality factors, mutual inductance and coupling coefficients were obtained. The inductance values of both windings are in agreement with expected ones. The device shows a good coupling coefficient and acceptable quality factors. The results show that it is feasible to build microtransformers with wire bonding onto an MCM substrate.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114554201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

SBMicro 2019 Sponsors

2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2019-08-01 DOI: 10.1109/sbmicro.2019.8919422

引用次数: 0

Multi-layers Lateral SOI PIN Photodiodes for Solar Cells Applications 用于太阳能电池的多层横向SOI PIN光电二极管

2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2019-08-01 DOI: 10.1109/SBMicro.2019.8919314

F. A. da Silva, R. Doria, M. G. C. de Andrade

引用次数: 0

Analysis of the substrate effect by the capacitive coupling in SOI UTBB Transistors SOI UTBB晶体管电容耦合对衬底效应的分析

2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2019-08-01 DOI: 10.1109/SBMicro.2019.8919305

F. Costa, R. Trevisoli, R. Doria

引用次数: 1

Suspended Slow-Wave transmission lines for mm-wave applications 用于毫米波应用的悬挂慢波传输线

2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2019-08-01 DOI: 10.1109/SBMicro.2019.8919327

L. Gomes, Serrano Ariana L. C., P. Ferrari, G. Rehder

引用次数: 2

Development of MEMS microsensors, aiming at the application in the study of muscle fatigue in vivo 开发MEMS微传感器，旨在将其应用于体内肌肉疲劳的研究

2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2019-08-01 DOI: 10.1109/SBMicro.2019.8919262

Kaique F. Sanches, Selva Jéssica S. G., D. D. Purificação, M. Bertotti, Carreño Marcelo N. P.

引用次数: 0

Development of MEMS based microCVD technique for new materials thin films deposition 基于MEMS的微cvd新材料薄膜沉积技术的发展

2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2019-08-01 DOI: 10.1109/SBMicro.2019.8919253

R.A.R. Oliveira, I. Pereyra, M. Carreño

{"title":"Development of MEMS based microCVD technique for new materials thin films deposition","authors":"R.A.R. Oliveira, I. Pereyra, M. Carreño","doi":"10.1109/SBMicro.2019.8919253","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919253","url":null,"abstract":"In this work a new approach for deposition of new materials is proposed. In this approach, a CVD (Chemical Vapor Deposition) process is implemented in a micro heater fabricated by MEMS technology, which presents as main appeals (a) short heating and cooling times, (b) the possibility of grown spatially localized films, in well defined regions of a substrate, and (c) to allow the growth of different materials in a single deposition process. Due to its conception, this approach also allows to grow the materials in a device integrated way, in structures where they can be characterized or in the final devices where they are going to be used. As it will be shown, a wide range of temperatures is attainable, from room temperature to well over 1000°C. The microCVD deposition is obtained when the MEMS micro heater is placed inside a vacuum chamber with the precursor gases and the micro heater is electrically polarized to attain the desire temperature. Computer simulation in Ansys Software was performed to estimate the final temperature of the heaters and the fabricated microCVD devices were tested in CH4 atmosphere, to obtain carbon and graphene films.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115156241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Boosting the Ionizing Radiation Tolerance in the Mosfets Matching by Using Diamond Layout Style 利用菱形布局提高mosfet匹配中的电离辐射容忍度

2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2019-08-01 DOI: 10.1109/SBMicro.2019.8919344

V. V. Peruzzi, W. Cruz, Gabriel Augusto da Silva, R. C. Teixeira, Luis Eduardo Seixas Junior, S. Gimenez

{"title":"Boosting the Ionizing Radiation Tolerance in the Mosfets Matching by Using Diamond Layout Style","authors":"V. V. Peruzzi, W. Cruz, Gabriel Augusto da Silva, R. C. Teixeira, Luis Eduardo Seixas Junior, S. Gimenez","doi":"10.1109/SBMicro.2019.8919344","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919344","url":null,"abstract":"There are a lot of initiatives to improve the devices matching (dog bone layout, common centroid layout, dummy devices, etc.). Another layout technique, not yet used by integrated circuits (ICs) companies, is the utilization of non-conventional layout styles (hexagonal, octagonal, ellipsoidal, etc.) for MOSFETs, thanks to the Longitudinal Corner Effect (LCE), Parallel Connection of MOSFETs with different channel Lengths Effect (PAMDLE) and Deactivation of Parasitic MOSFETs in Bird’s Beaks Regions (DEMPAMBBRE). In this context, this paper describes an experimental comparative study of the devices matching of Metal-Oxide-Semiconductor Field Effect Transistors (130 nm Silicon-Germanium Bulk), n-type (nMOSFETs) implemented with Diamond (hexagonal) and standard rectangular layout styles, regarding a sample of 189 transistors which were exposure to different X-rays ionizing radiations. Considering some relevant electrical parameters considered in this work, the results indicate that the Diamond layout style with $alpha$ angle equal to 90° is capable of boosting by at least 40% the device matching in relation to one observed with standard (rectangular) MOSFET counterparts in irradiation environment, considering they present the same gate areas, channel widths and bias conditions. Therefore, the Diamond layout style can be considered another hardness-by-design (HBD) layout strategy to boost the electrical performance and ionizing radiation tolerance of MOSFETs.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124195087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Analysis of the Scattering Mechanisms in the Accumulation Layer of Junctionless Nanowire Transistors at High Temperature 无结纳米线晶体管堆积层高温散射机理分析

2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2019-08-01 DOI: 10.1109/SBMicro.2019.8919428

T. A. Ribeiro, M. Pavanello

引用次数: 1

Realistic Simulations and Design of GaAs Solar Cells produced by Molecular Beam Epitaxy 分子束外延制备砷化镓太阳能电池的仿真与设计

2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2019-08-01 DOI: 10.1109/SBMicro.2019.8919412

T. Borrely, A. Quivy

引用次数: 0