Development of MEMS based microCVD technique for new materials thin films deposition

R.A.R. Oliveira, I. Pereyra, M. Carreño
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引用次数: 1

Abstract

In this work a new approach for deposition of new materials is proposed. In this approach, a CVD (Chemical Vapor Deposition) process is implemented in a micro heater fabricated by MEMS technology, which presents as main appeals (a) short heating and cooling times, (b) the possibility of grown spatially localized films, in well defined regions of a substrate, and (c) to allow the growth of different materials in a single deposition process. Due to its conception, this approach also allows to grow the materials in a device integrated way, in structures where they can be characterized or in the final devices where they are going to be used. As it will be shown, a wide range of temperatures is attainable, from room temperature to well over 1000°C. The microCVD deposition is obtained when the MEMS micro heater is placed inside a vacuum chamber with the precursor gases and the micro heater is electrically polarized to attain the desire temperature. Computer simulation in Ansys Software was performed to estimate the final temperature of the heaters and the fabricated microCVD devices were tested in CH4 atmosphere, to obtain carbon and graphene films.
基于MEMS的微cvd新材料薄膜沉积技术的发展
本文提出了一种沉积新材料的新方法。在这种方法中,CVD(化学气相沉积)工艺是在MEMS技术制造的微加热器中实现的,其主要吸引力在于(a)加热和冷却时间短,(b)在衬底的明确区域生长空间局部膜的可能性,以及(c)允许在单一沉积过程中生长不同的材料。由于它的概念,这种方法也允许以设备集成的方式生长材料,在结构中,它们可以被表征,或者在最终的设备中,它们将被使用。如图所示,温度范围很广,从室温到远高于1000°C。将MEMS微加热器与前驱体气体置于真空室中,并对微加热器进行电极化以达到所需温度,从而获得微cvd沉积。在Ansys软件中进行了计算机模拟,估计了加热器的最终温度,并在CH4气氛中对制备的微cvd器件进行了测试,获得了碳和石墨烯薄膜。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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