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2009 European Conference on Radiation and Its Effects on Components and Systems最新文献

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Gamma-radiation effects on the femto-second fiber Bragg gratings written in Ge-doped fibers 在掺锗光纤中写入飞秒光纤Bragg光栅的伽玛辐射效应
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 2009-09-01 DOI: 10.1109/RADECS.2009.5994681
A. Gusarov, B. Brichard, D. N. Nikogosyan
{"title":"Gamma-radiation effects on the femto-second fiber Bragg gratings written in Ge-doped fibers","authors":"A. Gusarov, B. Brichard, D. N. Nikogosyan","doi":"10.1109/RADECS.2009.5994681","DOIUrl":"https://doi.org/10.1109/RADECS.2009.5994681","url":null,"abstract":"We studied the effect of Co60 gamma-radiation on the peak position and the amplitude of fiber Bragg gratings. The gratings were written with a femto-second UV laser in three different fibers, both intrinsically highly photosensitive and hydrogen sensitized. We have found that in contrast with the results obtained on gratings written with UV-lasers, the Bragg peak shift under radiation is almost independent on the fiber type, the use of hydrogen loading, or grating amplitude. The grating amplitude change depends on the fiber type.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"201 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123032084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fast SER evaluation of embedded RAMs in fault emulation systems 故障仿真系统中嵌入式ram的快速SER评估
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 2009-09-01 DOI: 10.1109/RADECS.2009.5994590
M. Portela-García, C. López-Ongil, M. García-Valderas, E. S. Millán, L. Entrena
{"title":"Fast SER evaluation of embedded RAMs in fault emulation systems","authors":"M. Portela-García, C. López-Ongil, M. García-Valderas, E. S. Millán, L. Entrena","doi":"10.1109/RADECS.2009.5994590","DOIUrl":"https://doi.org/10.1109/RADECS.2009.5994590","url":null,"abstract":"Embedded RAMs have traditionally been a problem for transient fault injection systems based on emulation. Controllability and observability of large RAM blocks available in current digital devices (System-on-Chip, SOCs, and System-on-Programmable-Chip, SOPCs, Multiprocessor-System-On-Chip, MPSOCs) are restricted to data and address buses. It is mandatory, not only to check RAM block reliability itself but also its behaviour within a circuit where transient faults may be propagated from discrete memory elements (flip-flops) towards large memory blocks (RAMs) and vice versa. In this paper, a solution is proposed for checking the robustness of complex digital circuits against single events by means of hardware emulation. A new memory model accelerates emulation campaigns giving enhancements around 90% in fault injection rates.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129199415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SEE evaluation of a low-power 1μm-SOI 80C51 for extremely harsh environments 低功耗1μm-SOI 80C51在极端恶劣环境下的SEE评估
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 2009-09-01 DOI: 10.1109/RADECS.2009.5994718
P. Manet, Sebastien Falmagne, J. Garnier, G. Berger, J. Legat
{"title":"SEE evaluation of a low-power 1μm-SOI 80C51 for extremely harsh environments","authors":"P. Manet, Sebastien Falmagne, J. Garnier, G. Berger, J. Legat","doi":"10.1109/RADECS.2009.5994718","DOIUrl":"https://doi.org/10.1109/RADECS.2009.5994718","url":null,"abstract":"In this paper, we present the SEE characterization of an 80C51 microcontroller optimized for high temperature and low-power applications. Its microarchitecture has been completely redesigned with deep low-power optimizations. It has been manufactured in a 1μm SOI process with tungsten metallization layers ensuring a high sustained operating temperature of 225 °C. The SEE characterization presented here have been carried out in the Cyclotron Research Centre of Louvain-la-Neuve. It shows a very high threshold LET of 90 MeV/mg/cm2 at a nominal Vdd of 5 V, while it is latchup immune due to SOI. Thanks to the power-optimized microarchitecture, its power consumption is only 8.5 mW/MIPS, which is close to a LEON2 FT manufactured in a far more sensitive 0.18μm process, making it a very low-power 80C51 for extremely harsh environments. Hardening by using a harsh process allows to use standard design tools and advanced aggressive low-power techniques. Even if the SOI 1μm technology used here is very big, results obtained in this work show that it can compete for low-power microcontrollers with a 0.18μm sub-micron technology hardened by using power hungry tripple modular redundancy. Whereas this harsh process approach offers quite better SEE tolerance.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128575180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A CMOS integrated system for SEE-induced transients acquisition 一种用于see感应瞬态采集的CMOS集成系统
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 2009-09-01 DOI: 10.1109/RADECS.2009.5994573
S. Bota, J. Merino, B. Alorda, J. Verd, G. Torrens, J. Segura
{"title":"A CMOS integrated system for SEE-induced transients acquisition","authors":"S. Bota, J. Merino, B. Alorda, J. Verd, G. Torrens, J. Segura","doi":"10.1109/RADECS.2009.5994573","DOIUrl":"https://doi.org/10.1109/RADECS.2009.5994573","url":null,"abstract":"We present the design and operation of a monitor circuit that captures the effect of ionizing particles on sensitive CMOS IC internal nodes. The circuit implements a Single Event Effects (SEE) detector and a quick sampling block that captures the SEE induced waveform shape currents during a certain time window. These values can be read externally through a dedicated decoding circuitry. The circuit has been designed and fabricated on a 130nm technology. Preliminary experimental results and detailed simulations are provided to demonstrate the feasibility of the system implemented.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122033552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Impact of neutron irradiation on oxidized high-resistivity silicon substrates with and without a trap-rich passivation layer 中子辐照对氧化高电阻率硅衬底有或没有富阱钝化层的影响
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 2009-09-01 DOI: 10.1109/RADECS.2009.5994548
C. Roda Neve, V. Kilchytska, J. Alvarado, D. Lederer, O. Militaru, D. Flandre, J. Raskin
{"title":"Impact of neutron irradiation on oxidized high-resistivity silicon substrates with and without a trap-rich passivation layer","authors":"C. Roda Neve, V. Kilchytska, J. Alvarado, D. Lederer, O. Militaru, D. Flandre, J. Raskin","doi":"10.1109/RADECS.2009.5994548","DOIUrl":"https://doi.org/10.1109/RADECS.2009.5994548","url":null,"abstract":"This work investigates the influence of high-energy neutrons on oxidized high-resistivity Si substrates. Two oxide thicknesses as well as the presence of a trap-rich passivation layer are considered. The impact of neutron irradiation is directly related to the competition between the generation of interface traps, which are beneficial to reduce parasitic surface conduction (PCS) into the Si substrate similarly to the passivation layer, and accumulation of radiation induced positive charges in oxide, which would unfortunately increase PSC. It is shown that under neutron irradiation, RF losses are strongly reduced in the case of thin oxide, while substrates with a polysilicon passivation layer are almost insensitive to the neutron irradiation.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"8 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133239834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A new approach in predicting the response of silicon p-i-n diodes used as radiation monitoring sensors up to very high fluences 预测用于辐射监测传感器的硅p-i-n二极管响应的新方法
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 2009-09-01 DOI: 10.1109/RADECS.2009.5994691
Julien Mekki, Michael Moll, M. Fahrer, M. Glaser, L. Dusseau
{"title":"A new approach in predicting the response of silicon p-i-n diodes used as radiation monitoring sensors up to very high fluences","authors":"Julien Mekki, Michael Moll, M. Fahrer, M. Glaser, L. Dusseau","doi":"10.1109/RADECS.2009.5994691","DOIUrl":"https://doi.org/10.1109/RADECS.2009.5994691","url":null,"abstract":"In this work the effect of radiation damage on Silicon p-i-n diodes has been studied. I-V characteristics of unirradiated and irradiated diodes up to 6.3×10<sup>15</sup> n<inf>eq</inf>/cm<sup>2</sup> have been measured and analyzed to give a more comprehensive understanding of the Si-bulk properties after irradiation.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126298533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A simple method for optocouplers selection in the frame of space applications 在空间应用框架中选择光耦合器的一种简单方法
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 2009-09-01 DOI: 10.1109/RADECS.2009.5994685
D. Peyre, C. Binois, M. Mendenhall, R. Weller, R. Mangeret, G. Salvaterra, G. Montay, T. Beutier, M. Beaumel, R. H. Sorensen, C. Poivey
{"title":"A simple method for optocouplers selection in the frame of space applications","authors":"D. Peyre, C. Binois, M. Mendenhall, R. Weller, R. Mangeret, G. Salvaterra, G. Montay, T. Beutier, M. Beaumel, R. H. Sorensen, C. Poivey","doi":"10.1109/RADECS.2009.5994685","DOIUrl":"https://doi.org/10.1109/RADECS.2009.5994685","url":null,"abstract":"Proton irradiations were performed on three types of optocouplers at three energies 60 MeV, 100 MeV and 200 MeV, followed by a TID irradiation up to 75 kRAD. GEANT4 allowed the calculation of the fluences needed to induce the same NIEL. As a preliminary result, diode's degradations can be predicted and only depend on the initial minority carrier lifetime τrr0 and not the technology.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121139797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analyze of current components in NMOS single event transient NMOS单事件暂态电流分量分析
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 2009-09-01 DOI: 10.1109/RADECS.2009.5994587
Liu Zheng, Chen Shuming, Liang Bin, Liu Biwei, Zhao Zhenyu
{"title":"Analyze of current components in NMOS single event transient","authors":"Liu Zheng, Chen Shuming, Liang Bin, Liu Biwei, Zhao Zhenyu","doi":"10.1109/RADECS.2009.5994587","DOIUrl":"https://doi.org/10.1109/RADECS.2009.5994587","url":null,"abstract":"3D mixed-mode simulation is used to research current components of SET current pulse in inverter chain, compared with that in a single NMOS. It is found that parasitic bipolar conduction current is the major component in SET current of single NMOS, but not in deep-submicron CMOS circuit. The paper provides a detailed discussion of source current in SET and it shows that negative and positive components of source current are related to bipolar amplification and diffusion of carriers respectively.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122858259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Total-dose worst-case test vectors for logic faults induced in combinational circuits of cell-based ASICs 基于cell的asic组合电路逻辑故障的总剂量最坏情况测试向量
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 2009-09-01 DOI: 10.1109/RADECS.2009.5994669
A. Abou-Auf, H. A. Abdel-Aziz, M. M. Abdel-Aziz
{"title":"Total-dose worst-case test vectors for logic faults induced in combinational circuits of cell-based ASICs","authors":"A. Abou-Auf, H. A. Abdel-Aziz, M. M. Abdel-Aziz","doi":"10.1109/RADECS.2009.5994669","DOIUrl":"https://doi.org/10.1109/RADECS.2009.5994669","url":null,"abstract":"We developed a methodology for identifying worst-case test vectors for logic faults induced in combinational circuits of cell-based ASICs induced by total dose. This methodology is independent of the design tools and the process technology.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115717268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Characterization of new radiation hardened bipolar operational amplifiers 新型抗辐射双极运算放大器的特性研究
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 2009-09-01 DOI: 10.1109/RADECS.2009.5994727
G. Chaumont, Benoit Cornanguer, P. Briand, C. Prugne, F. Malou
{"title":"Characterization of new radiation hardened bipolar operational amplifiers","authors":"G. Chaumont, Benoit Cornanguer, P. Briand, C. Prugne, F. Malou","doi":"10.1109/RADECS.2009.5994727","DOIUrl":"https://doi.org/10.1109/RADECS.2009.5994727","url":null,"abstract":"New operational amplifiers have been ELDRS and heavy ions characterized. This paper presents the TID results at high and low dose rate and SEE tests results.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126489399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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