Proceedings of 1994 VLSI Technology Symposium最新文献_第3页

A compact inverted-spacer TFT for high-density SRAMs 用于高密度sram的紧凑反间隔TFT

Proceedings of 1994 VLSI Technology Symposium Pub Date : 1994-06-07 DOI: 10.1109/VLSIT.1994.324435

J.R. Pfiester, J. Lin, K. Mocala, Y. Ku, J. Higman, T. McNelly, M. Blackwell, V. Kaushik, B. James, R. Hegde

引用次数: 1

An ultra-thin fully depleted floating gate technology for 64 Mb flash and beyond 一种超薄的完全耗尽浮动栅极技术，适用于64mb及以上的闪存

Proceedings of 1994 VLSI Technology Symposium Pub Date : 1994-06-07 DOI: 10.1109/VLSIT.1994.324375

S. Sato, K. Hakozaki, K. Azuma, K. Iguchi, K. Sakiyama

引用次数: 1

Exploring the limits of cycle time for VLSI processing 探索VLSI处理的周期时间限制

Proceedings of 1994 VLSI Technology Symposium Pub Date : 1994-06-07 DOI: 10.1109/VLSIT.1994.324392

R. Doering, D. Reed

引用次数: 10

0.15 /spl mu/m ArF excimer laser lithography using top surface imaging with high contrast silylation agent B(DMA)DS 采用高对比度硅化剂B(DMA)DS顶面成像的0.15 /spl μ m ArF准分子激光光刻技术

Proceedings of 1994 VLSI Technology Symposium Pub Date : 1994-06-07 DOI: 10.1109/VLSIT.1994.324439

T. Ohfuji, N. Aizaki

引用次数: 1

Data retention in ultra-thin-film-SOI DRAM with buried capacitor cell 埋式电容电池超薄膜soi DRAM的数据保留

Proceedings of 1994 VLSI Technology Symposium Pub Date : 1994-06-07 DOI: 10.1109/VLSIT.1994.324388

T. Nishihara, H. Moriya, N. Ikeda, H. Aozasa, Y. Miyazawa

引用次数: 8

0.1 /spl mu/m delta-doped MOSFET using post low-energy implanting selective epitaxy 0.1 /spl mu/m δ掺杂MOSFET低能植入后选择性外延

Proceedings of 1994 VLSI Technology Symposium Pub Date : 1994-06-07 DOI: 10.1109/VLSIT.1994.324398

K. Noda, T. Uchida, T. Tatsumi, T. Aoyama, K. Nakajima, H. Miyamoto, T. Hashimoto, I. Sasaki

引用次数: 17

Reduction of wiring capacitance with new low dielectric SiOF interlayer film for high speed/low power sub-half micron CMOS 用新型低介电SiOF层间膜降低高速/低功耗亚半微米CMOS的布线电容

Proceedings of 1994 VLSI Technology Symposium Pub Date : 1994-06-07 DOI: 10.1109/VLSIT.1994.324378

J. Ida, M. Yoshimaru, T. Usami, A. Ohtomo, K. Shimokawa, A. Kita, M. Ino

引用次数: 26

Semiconductor technology crisis and challenges towards the year 2000 面向2000年的半导体技术危机与挑战

Proceedings of 1994 VLSI Technology Symposium Pub Date : 1994-06-07 DOI: 10.1109/VLSIT.1994.324404

S. Kohyama

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引用次数: 7

Novel deep sub-quarter micron PMOSFETs with ultra-shallow junctions utilizing boron diffusion from poly-Si/oxide(BDSOX) 利用多晶硅/氧化物(BDSOX)硼扩散的新型超浅结深亚四分之一微米pmosfet

Proceedings of 1994 VLSI Technology Symposium Pub Date : 1994-06-07 DOI: 10.1109/VLSIT.1994.324397

M. Togo, T. Mogami, K. Uwasawa, T. Kunio

引用次数: 2

Low parasitic resistance technologies with NES-SAC and SWT-CVD process for low supply voltage, high speed BiCMOS SRAMs 用于低电源电压、高速 BiCMOS SRAM 的 NES-SAC 和 SWT-CVD 工艺的低寄生电阻技术

Proceedings of 1994 VLSI Technology Symposium Pub Date : 1994-06-07 DOI: 10.1109/VLSIT.1994.324436

Y. Ishigaki, H. Kuriyama, H. Honda, Y. Kohno, J. Tsuchimoto, S. Sakamori, A. Kinoshita, T. Hirose, S. Ohbayashi, M. Ashida, H. Matsuo, H. Miyoshi

引用次数: 0