Nanowires - Recent Progress最新文献

ZnO Nanowire Field-Effect Transistor for Biosensing: A Review 用于生物传感的ZnO纳米线场效应晶体管研究进展

Nanowires - Recent Progress Pub Date : 2021-07-14 DOI: 10.5772/intechopen.93707

Nonofo Mathiba Jack Ditshego

引用次数: 0

Indium (In)-Catalyzed Silicon Nanowires (Si NWs) Grown by the Vapor–Liquid–Solid (VLS) Mode for Nanoscale Device Applications 气-液-固(VLS)模式生长的铟催化硅纳米线(Si NWs)在纳米器件中的应用

Nanowires - Recent Progress Pub Date : 2021-05-19 DOI: 10.5772/INTECHOPEN.97723

M. A. Khan, Y. Ishikawa

{"title":"Indium (In)-Catalyzed Silicon Nanowires (Si NWs) Grown by the Vapor–Liquid–Solid (VLS) Mode for Nanoscale Device Applications","authors":"M. A. Khan, Y. Ishikawa","doi":"10.5772/INTECHOPEN.97723","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.97723","url":null,"abstract":"Stacking fault free and planar defects (twin plane) free catalyzed Si nanowires (Si NWs) is essential for the carrier transport in the nanoscale devices applications. In this chapter, In-catalyzed, vertically aligned and cone-shaped Si NWs arrays were grown by using vapor–liquid–solid (VLS) mode on Si (111) substrates. We have successfully controlled the verticality and (111)-orientation of Si NWs as well as scaled down the diameter to 18 nm. The density of Si NWs was also enhanced from 2.5 μm−2 to 70 μm−2. Such vertically aligned, (111)-oriented p-type Si NWs are very important for the nanoscale device applications including Si NWs/c-Si tandem solar cells and p-Si NWs/n-InGaZnO Heterojunction LEDs. Next, the influence of substrate growth temperature (TS), cooling rate (∆TS/∆𝑡) on the formation of planar defects, twining along [112] direction and stacking fault in Si NWs perpendicular to (111)-orientation were deeply investigated. Finally, one simple model was proposed to explain the formation of stacking fault, twining of planar defects in perpendicular direction to the axial growth direction of Si NWs. When the TS was decreased from 600°C with the cooling rate of 100°C/240 sec to room temperature (RT) after Si NWs growth then the twin planar defects perpendicular to the substrate and along different segments of (111)-oriented Si NWs were observed.","PeriodicalId":377742,"journal":{"name":"Nanowires - Recent Progress","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128684614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

In Situ TEM Studies of III-V Nanowire Growth Mechanism III-V纳米线生长机理的原位TEM研究

Nanowires - Recent Progress Pub Date : 2021-02-03 DOI: 10.5772/INTECHOPEN.95690

Carina B. Maliakkal

{"title":"In Situ TEM Studies of III-V Nanowire Growth Mechanism","authors":"Carina B. Maliakkal","doi":"10.5772/INTECHOPEN.95690","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.95690","url":null,"abstract":"Growing nanowires inside a transmission electron microscope (TEM) and observing the process in situ has contributed immensely to understanding nanowire growth mechanisms. Majority of such studies were on elemental semiconductors – either Si or Ge – both of which are indirect bandgap semiconductors. Several compound semiconductors on the other hand have a direct bandgap making them more efficient in several applications involving light absorption or emission. During compound nanowire growth using a metal catalyst, the difference in miscibility of the nanowire species inside the metal catalyst are different, making its growth dynamics different from elemental nanowires. Thus, studies specifically focusing on compound nanowires are necessary for understanding its growth dynamics. This chapter reviews the recent progresses in the understanding of compound semiconductor nanowire growth obtained using in situ TEM. The concentrations of the nanowire species in the catalyst was studied in situ. This concentration difference has been shown to enable independent control of layer nucleation and layer growth in nanowires. In situ TEM has also enabled better understanding of the formation of metastable crystal structures in nanowires.","PeriodicalId":377742,"journal":{"name":"Nanowires - Recent Progress","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123022099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Nanowires Integrated to Optical Waveguides 纳米线集成于光波导

Nanowires - Recent Progress Pub Date : 2021-01-30 DOI: 10.5772/INTECHOPEN.95689

R. Téllez-Limón, R. Salas-Montiel

{"title":"Nanowires Integrated to Optical Waveguides","authors":"R. Téllez-Limón, R. Salas-Montiel","doi":"10.5772/INTECHOPEN.95689","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.95689","url":null,"abstract":"Chip-scale integrated optical devices are one of the most developed research subjects in last years. These devices serve as a bridge to overcome size mismatch between diffraction-limited bulk optics and nanoscale photonic devices. They have been employed to develop many on-chip applications, such as integrated light sources, polarizers, optical filters, and even biosensing devices. Among these integrated systems can be found the so-called hybrid photonic-plasmonic devices, structures that integrate plasmonic metamaterials on top of optical waveguides, leading to outstanding physical phenomena. In this contribution, we present a comprehensive study of the design of hybrid photonic-plasmonic systems consisting of periodic arrays of metallic nanowires integrated on top of dielectric waveguides. Based on numerical simulations, we explain the physics of these structures and analyze light coupling between plasmonic resonances in the nanowires and the photonic modes of the waveguides below them. With this chapter we pretend to attract the interest of research community in the development of integrated hybrid photonic-plasmonic devices, especially light interaction between guided photonic modes and plasmonic resonances in metallic nanowires.","PeriodicalId":377742,"journal":{"name":"Nanowires - Recent Progress","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129132743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

III-Nitride Nanowires: Future Prospective for Photovoltaic Applications 氮化纳米线:光伏应用的未来展望

Nanowires - Recent Progress Pub Date : 2020-12-07 DOI: 10.5772/intechopen.95011

S. Routray, T. Lenka

引用次数: 0

Synthesis of Nanowire Using Glancing Angle Deposition and Their Applications 掠角沉积法合成纳米线及其应用

Nanowires - Recent Progress Pub Date : 2020-12-07 DOI: 10.5772/intechopen.94012

Chinnamuthu Paulsamy, P. Pooja, Heigrujam Manas Singh

引用次数: 0

Gate-All-Around FETs: Nanowire and Nanosheet Structure 栅极全方位场效应管:纳米线和纳米片结构

Nanowires - Recent Progress Pub Date : 2020-10-30 DOI: 10.5772/intechopen.94060

Jun-Sik Yoon, J. Jeong, Seung Hwan Lee, Junjong Lee, R. Baek

{"title":"Gate-All-Around FETs: Nanowire and Nanosheet Structure","authors":"Jun-Sik Yoon, J. Jeong, Seung Hwan Lee, Junjong Lee, R. Baek","doi":"10.5772/intechopen.94060","DOIUrl":"https://doi.org/10.5772/intechopen.94060","url":null,"abstract":"DC/AC performances of 3-nm-node gate-all-around (GAA) FETs having different widths and the number of channels (Nch) from 1 to 5 were investigated thoroughly using fully-calibrated TCAD. There are two types of GAAFETs: nanowire (NW) FETs having the same width (WNW) and thickness of the channels, and nanosheet (NS) FETs having wide width (WNS) but the fixed thickness of the channels as 5 nm. Compared to FinFETs, GAAFETs can maintain good short channel characteristics as the WNW is smaller than 9 nm but irrespective of the WNS. DC performances of the GAAFETs improve as the Nch increases but at decreasing rate because of the parasitic resistances at the source/drain epi. On the other hand, gate capacitances of the GAAFETs increase constantly as the Nch increases. Therefore, the GAAFETs have minimum RC delay at the Nch near 3. For low power applications, NWFETs outperform FinFETs and NSFETs due to their excellent short channel characteristics by 2-D structural confinement. For standard and high performance applications, NSFETs outperform FinFETs and NWFETs by showing superior DC performances arising from larger effective widths per footprint. Overall, GAAFETs are great candidates to substitute FinFETs in the 3-nm technology node for all the applications.","PeriodicalId":377742,"journal":{"name":"Nanowires - Recent Progress","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121305559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Engineering the Color and the Donor-Acceptor Behavior in Nanowires: Blend Versus Coaxial Geometry 纳米线中颜色和施主-受主行为的工程:混合几何与同轴几何

Nanowires - Recent Progress Pub Date : 2020-10-21 DOI: 10.5772/intechopen.94214

M. Mbarek, K. Alimi

引用次数: 0

Metal Oxide Nanowires as Building Blocks for Optoelectronic Devices 金属氧化物纳米线作为光电器件的基本构件

Nanowires - Recent Progress Pub Date : 2020-10-20 DOI: 10.5772/intechopen.94011

A. Costas, N. Preda, C. Florica, I. Enculescu

引用次数: 2

Recent Progress in Gallium Nitride for Photoelectrochemical Water Splitting 氮化镓光电分解水的研究进展

Nanowires - Recent Progress Pub Date : 2020-06-24 DOI: 10.5772/intechopen.92848

Fangliang Gao, Q. Liu, Jiang Shi, Shuti Li

引用次数: 2