III-V纳米线生长机理的原位TEM研究

Carina B. Maliakkal
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引用次数: 0

摘要

在透射电子显微镜(TEM)内生长纳米线并在原位观察其过程对理解纳米线的生长机制有很大的帮助。大多数这样的研究都是在元素半导体上进行的——要么是硅,要么是锗——两者都是间接带隙半导体。另一方面,几种化合物半导体具有直接带隙,使它们在涉及光吸收或发射的几种应用中更有效。在金属催化剂的复合纳米线生长过程中,金属催化剂中纳米线的混相不同,使得其生长动力学与单质纳米线不同。因此,对复合纳米线的研究是了解其生长动态的必要条件。本章回顾了原位透射电镜对化合物半导体纳米线生长的最新研究进展。对催化剂中纳米线的浓度进行了原位研究。这种浓度差异已被证明能够独立控制纳米线中的层成核和层生长。原位透射电镜也能更好地理解纳米线中亚稳晶体结构的形成。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
In Situ TEM Studies of III-V Nanowire Growth Mechanism
Growing nanowires inside a transmission electron microscope (TEM) and observing the process in situ has contributed immensely to understanding nanowire growth mechanisms. Majority of such studies were on elemental semiconductors – either Si or Ge – both of which are indirect bandgap semiconductors. Several compound semiconductors on the other hand have a direct bandgap making them more efficient in several applications involving light absorption or emission. During compound nanowire growth using a metal catalyst, the difference in miscibility of the nanowire species inside the metal catalyst are different, making its growth dynamics different from elemental nanowires. Thus, studies specifically focusing on compound nanowires are necessary for understanding its growth dynamics. This chapter reviews the recent progresses in the understanding of compound semiconductor nanowire growth obtained using in situ TEM. The concentrations of the nanowire species in the catalyst was studied in situ. This concentration difference has been shown to enable independent control of layer nucleation and layer growth in nanowires. In situ TEM has also enabled better understanding of the formation of metastable crystal structures in nanowires.
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