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2020 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)最新文献

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Complexity Reduction Techniques for NOMA-based RRM Algorithms in 5G Networks 5G网络中基于noma的RRM算法的复杂度降低技术
2020 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2020-10-15 DOI: 10.1109/EExPolytech50912.2020.9243860
A. Abuin, E. Iradier, L. Fanari, J. Montalbán, P. Angueira
{"title":"Complexity Reduction Techniques for NOMA-based RRM Algorithms in 5G Networks","authors":"A. Abuin, E. Iradier, L. Fanari, J. Montalbán, P. Angueira","doi":"10.1109/EExPolytech50912.2020.9243860","DOIUrl":"https://doi.org/10.1109/EExPolytech50912.2020.9243860","url":null,"abstract":"5G technology is expected to be a revolution in mobile communications due to its flexible physical layer (PHY). It is expected to cover a wide range of applications such as industry, virtual reality (VR) and autonomous vehicles. In particular, this work is focused in one of the main use cases of 5G: enhanced Mobile Broadband (eMBB), which targets large transmission capacities. This paper proposes algorithms that optimize the distribution of radio resources in broadcast/unicast scenarios in 5G networks using Non-Orthogonal Multiple Access (NOMA) techniques. First, a methodology to measure the complexity of those algorithms is presented and compared with Time Division Multiplexing (TDM) solutions. In addition, a specific algorithm that reaches optimum solution with less computational cost is proposed here. Results indicate that the overall complexity can be reduced more than 80% in comparison with current solutions.","PeriodicalId":374410,"journal":{"name":"2020 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129551801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Gain of a He-Ne Laser with an Active Element Cross-ection in the Form of a Hyperbolic Polygon 双曲多边形形式有源元件交叉的He-Ne激光器增益
2020 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2020-10-15 DOI: 10.1109/EExPolytech50912.2020.9243964
V. Kozhevnikov, V. Privalov
{"title":"Gain of a He-Ne Laser with an Active Element Cross-ection in the Form of a Hyperbolic Polygon","authors":"V. Kozhevnikov, V. Privalov","doi":"10.1109/EExPolytech50912.2020.9243964","DOIUrl":"https://doi.org/10.1109/EExPolytech50912.2020.9243964","url":null,"abstract":"Gains of lasers with hyperbolic polygon cross sections of tubes are considered. Results obtained show the perceptiveness of such cross-sections in comparison with conventional polygonal ones.","PeriodicalId":374410,"journal":{"name":"2020 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130993630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Comparative Analysis of Switching Schemes for 6-bit Arrays in Binary DACs 二进制dac中6位阵列开关方案的比较分析
2020 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2020-10-15 DOI: 10.1109/EExPolytech50912.2020.9243952
M. Yenuchenko, M. Pilipko
{"title":"Comparative Analysis of Switching Schemes for 6-bit Arrays in Binary DACs","authors":"M. Yenuchenko, M. Pilipko","doi":"10.1109/EExPolytech50912.2020.9243952","DOIUrl":"https://doi.org/10.1109/EExPolytech50912.2020.9243952","url":null,"abstract":"This paper is devoted to switching schemes for binary DACs. At present, there are plenty of switching schemes compensating the systematic error influence. However, a lack of detailed simulation and comparison does not allow choosing the most effective one. In this paper, 12 switching schemes are simulated and compared. The Flower switching scheme is proposed. A detailed analysis both of switching schemes’ properties and of the correlation index usefulness is presented. A modification of the correlation index for the case of binary arrays is proposed.","PeriodicalId":374410,"journal":{"name":"2020 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132751631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Photoelastic Express Diagnostics of the Surface Stresses in Rod Elements with Radial Refractive Index Gradient 径向折射率梯度杆单元表面应力的光弹性快速诊断
2020 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2020-10-15 DOI: 10.1109/EExPolytech50912.2020.9243998
D. Karov, V. Loboda, A. Kuzmina, A. Puro
{"title":"Photoelastic Express Diagnostics of the Surface Stresses in Rod Elements with Radial Refractive Index Gradient","authors":"D. Karov, V. Loboda, A. Kuzmina, A. Puro","doi":"10.1109/EExPolytech50912.2020.9243998","DOIUrl":"https://doi.org/10.1109/EExPolytech50912.2020.9243998","url":null,"abstract":"The paper presents the derivation of the equation for express determination of surface residual stresses in GRIN glass rods with axially symmetrical refractive index distribution n(r). At n(r)=const, it becomes the V.L. Indenbom’s relation for quenched glass cylinders.","PeriodicalId":374410,"journal":{"name":"2020 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115654281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of the Mechanism of Electronic Conductivity and Parameters of Localized States in Porous Anodic Alumina Films Obtained in Phosphoric Acid 磷酸法制备多孔阳极氧化铝膜的电导率机理及局域态参数研究
2020 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2020-10-15 DOI: 10.1109/EExPolytech50912.2020.9243857
I. Vrublevsky, N. Lushpa, K. Chernyakova, S. Nalimova, E. Muratova, Vyacheslav Moshnikov
{"title":"Investigation of the Mechanism of Electronic Conductivity and Parameters of Localized States in Porous Anodic Alumina Films Obtained in Phosphoric Acid","authors":"I. Vrublevsky, N. Lushpa, K. Chernyakova, S. Nalimova, E. Muratova, Vyacheslav Moshnikov","doi":"10.1109/EExPolytech50912.2020.9243857","DOIUrl":"https://doi.org/10.1109/EExPolytech50912.2020.9243857","url":null,"abstract":"The results of studies of electronic conductivity in annealed films of porous anodic alumina obtained in phosphoric acid are presented. Polarization experiments were carried out for an electrolyte-anodic alumina -aluminum structure in a barrier type electrolyte in the anodic potential sweep mode. It is shown that the initial section of the current curve is described by the theory of a current by a limited space charge for the case of electron traps exponentially distributed over energies in the energy gap of anodic alumina. For porous anodic alumina formed in phosphoric acid, it was experimentally determined that the characteristic energy of the distribution of traps in the band gap of anodic alumina is 0.23 eV.","PeriodicalId":374410,"journal":{"name":"2020 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124579345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Low-threshold Field Electron Emission from Mo Islet Films with Varied Thickness 不同厚度钼岛膜的低阈值场电子发射
2020 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2020-10-15 DOI: 10.1109/EExPolytech50912.2020.9243993
I. Bizyaev, P. Gabdullin, Vasily Osipov, Nikolay Gnuchev, A. Arkhipov
{"title":"Low-threshold Field Electron Emission from Mo Islet Films with Varied Thickness","authors":"I. Bizyaev, P. Gabdullin, Vasily Osipov, Nikolay Gnuchev, A. Arkhipov","doi":"10.1109/EExPolytech50912.2020.9243993","DOIUrl":"https://doi.org/10.1109/EExPolytech50912.2020.9243993","url":null,"abstract":"The paper presents a study of the phenomenon of low-threshold field electron emission from thin films deposited on doped silicon wafers. The performed experiments have confirmed that Mo islet films (as well as previously studied carbon ones) can yield a measurable emission current at room temperature in field having macroscopic strength of the order of 1 $mathrm{V}/mu mathrm{m}$. Nano-islet films with 6..10 nm effective thickness demonstrated the best electron emission performance. The obtained results witness for the two-temperature (or hot-electron) mechanism of cold electron emission.","PeriodicalId":374410,"journal":{"name":"2020 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128874624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Teflon buffer on PdY alloy deposited Side Polished Fiber Hydrogen Sensor 聚四氟乙烯缓冲液对PdY合金沉积侧抛光光纤氢传感器的影响
2020 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2020-10-15 DOI: 10.1109/EExPolytech50912.2020.9244006
M. Singh, Santosh Kumar Chaurasia
{"title":"Effect of Teflon buffer on PdY alloy deposited Side Polished Fiber Hydrogen Sensor","authors":"M. Singh, Santosh Kumar Chaurasia","doi":"10.1109/EExPolytech50912.2020.9244006","DOIUrl":"https://doi.org/10.1109/EExPolytech50912.2020.9244006","url":null,"abstract":"Side polished fiber sensor is highly selective for hydrogen when Palladium and its alloy are playing the role of sensing layer. To design study of this fiber hydrogen sensor apply the modal approach. The presence of yttrium in palladium yttrium (PdY) alloy reducing the cracking and blistering effect of hydrogen sensor. The presence of Teflon between core of the side polished fiber and palladium yttrium alloy (PdY) influences the sensitivity. The thickness of Teflon and palladium yttrium alloy layers are optimized to achieve higher sensitivity","PeriodicalId":374410,"journal":{"name":"2020 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126960214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Application of Neural Networks to Reduce Distortion of RF Signals in Switch Mode Power Amplifiers 神经网络在降低开关模式功率放大器射频信号失真中的应用
2020 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2020-10-15 DOI: 10.1109/EExPolytech50912.2020.9243973
V. Sorotsky, R. Zudov
{"title":"Application of Neural Networks to Reduce Distortion of RF Signals in Switch Mode Power Amplifiers","authors":"V. Sorotsky, R. Zudov","doi":"10.1109/EExPolytech50912.2020.9243973","DOIUrl":"https://doi.org/10.1109/EExPolytech50912.2020.9243973","url":null,"abstract":"The paper covers the problem of reducing distortion of switch mode power amplifier (SMPA) output voltage using a neural network. Signal distortion in SMPA is mainly caused by transistors’ parameters dispersion. In multi-cell SMPA being widely used in envelope tracking power supplies (ETPS) significant effect on signal distortion is also produced by deviation of parameters of combiner elements. To reduce signal distortion an adaptive adjustment by neural network of the width of control pulses’ being applied to the transistors’ gates can be used. Using this approach for lowering even harmonics in the RF carrier generated by SMPA, the 2nd harmonic was reduced by 10$ldots$15 dB. The created neural network showed its ability to operate with both a linear approximation of the rise and fall time intervals of transistors and a quasi-sinusoidal one. This allows us to propose the admissibility of the neural network use in case of rather complex approximation of SMPA output voltage at the switching time intervals. Proceeding from the need to increase the efficiency of the PAs, the use of switch modes is of increasing interest.","PeriodicalId":374410,"journal":{"name":"2020 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125820351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Triple CJFET (Si, SiN, GaN, GaAs) Analog of the CMOS Transistor and its Main Connection Circuits in Low-Temperature Electronics 低温电子学中CMOS晶体管的三重CJFET (Si, SiN, GaN, GaAs)模拟及其主连接电路
2020 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2020-10-15 DOI: 10.1109/EExPolytech50912.2020.9243984
N. Prokopenko, A. Zhuk, Y. Ivanov
{"title":"Triple CJFET (Si, SiN, GaN, GaAs) Analog of the CMOS Transistor and its Main Connection Circuits in Low-Temperature Electronics","authors":"N. Prokopenko, A. Zhuk, Y. Ivanov","doi":"10.1109/EExPolytech50912.2020.9243984","DOIUrl":"https://doi.org/10.1109/EExPolytech50912.2020.9243984","url":null,"abstract":"The structure of the CJFET composite transistor (CT) for JFET technologies (Si, SiC, GaN, GaAs, etc.) is proposed, which in its drain-gate characteristics is similar to a CMOS junction field-effect transistor with an induced channel. The structure of the CJFET CT under consideration has a typical off state zone with a gate-source voltage not exceeding its threshold voltage. When the voltage increases at the equivalent gate, the CT switches to the active mode and can be used in tasks of analog signal amplification. Besides, with respect to the equivalent drain terminal of the CT, the signal is not inverted in the proposed CT. This is its wonderful feature. The main connection silicon circuits of the CT in cryogenic electronics are considered.","PeriodicalId":374410,"journal":{"name":"2020 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132770777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Solvents on Thermomechanical Properties and Piezoelectric Beta-phase of PVDF-TrFE Films 溶剂对PVDF-TrFE薄膜热力学性能及压电相的影响
2020 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2020-10-15 DOI: 10.1109/EExPolytech50912.2020.9243865
A. I. Kuhn, O. Gryshkov, B. Glasmacher
{"title":"Effect of Solvents on Thermomechanical Properties and Piezoelectric Beta-phase of PVDF-TrFE Films","authors":"A. I. Kuhn, O. Gryshkov, B. Glasmacher","doi":"10.1109/EExPolytech50912.2020.9243865","DOIUrl":"https://doi.org/10.1109/EExPolytech50912.2020.9243865","url":null,"abstract":"Co-polymer polyvinylidene fluoride-co-trifluoroethylene (PVDF-TrFE) is a promising piezoelectric material for a range of medical and industrial applications such as tissue engineering, sensors and membrane technics. In this regard, blend electrospinning is an ideal method to produce suitable polymeric nano- and micro-fiber scaffolds or membranes from polymer solutions. Stable electrospinning process is strongly dependent on PVDF-TrFE solution properties. Thus, this study aimed at evaluating the effect of different suitable solvents on physical properties PVDF-TrFE polymer solutions and produced films with different solvent combinations and mixing ratios. The results indicate that solution viscosities range between 5.47 and 37.17 Pa.s. Furthermore, piezoelectric phase fraction and crystallinity of PVDF-TrFE films were characterized using Fourier Transform Infrared Spectroscopy and Differential Scanning Calorimetry, respectively. All films exhibited a piezoelectric polar beta-phase formation. The crystalline beta-phase fraction of the most of the films was higher than the value of the initial material (77%). Results demonstrate the influence of solvent combinations and mixing ratios on melting temperature and crystallinity.","PeriodicalId":374410,"journal":{"name":"2020 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116815855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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