不同厚度钼岛膜的低阈值场电子发射

2020 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2020-10-15 DOI:10.1109/EExPolytech50912.2020.9243993

I. Bizyaev, P. Gabdullin, Vasily Osipov, Nikolay Gnuchev, A. Arkhipov

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引用次数: 0

摘要

本文研究了掺杂硅片上薄膜的低阈值场电子发射现象。实验证实，Mo岛膜(以及以前研究过的碳岛膜)在室温场下可以产生可测量的发射电流，其宏观强度为1 $\ mathm {V}/\mu \ mathm {m}$数量级。6.纳米岛膜10 nm的有效厚度表现出最佳的电子发射性能。所得结果证明了冷电子发射的双温度(或热电子)机制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Low-threshold Field Electron Emission from Mo Islet Films with Varied Thickness

The paper presents a study of the phenomenon of low-threshold field electron emission from thin films deposited on doped silicon wafers. The performed experiments have confirmed that Mo islet films (as well as previously studied carbon ones) can yield a measurable emission current at room temperature in field having macroscopic strength of the order of 1 $\mathrm{V}/\mu \mathrm{m}$. Nano-islet films with 6..10 nm effective thickness demonstrated the best electron emission performance. The obtained results witness for the two-temperature (or hot-electron) mechanism of cold electron emission.

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2020 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)

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