Triple CJFET (Si, SiN, GaN, GaAs) Analog of the CMOS Transistor and its Main Connection Circuits in Low-Temperature Electronics

The structure of the CJFET composite transistor (CT) for JFET technologies (Si, SiC, GaN, GaAs, etc.) is proposed, which in its drain-gate characteristics is similar to a CMOS junction field-effect transistor with an induced channel. The structure of the CJFET CT under consideration has a typical off state zone with a gate-source voltage not exceeding its threshold voltage. When the voltage increases at the equivalent gate, the CT switches to the active mode and can be used in tasks of analog signal amplification. Besides, with respect to the equivalent drain terminal of the CT, the signal is not inverted in the proposed CT. This is its wonderful feature. The main connection silicon circuits of the CT in cryogenic electronics are considered.