Low-threshold Field Electron Emission from Mo Islet Films with Varied Thickness

Abstract

The paper presents a study of the phenomenon of low-threshold field electron emission from thin films deposited on doped silicon wafers. The performed experiments have confirmed that Mo islet films (as well as previously studied carbon ones) can yield a measurable emission current at room temperature in field having macroscopic strength of the order of 1 $\mathrm{V}/\mu \mathrm{m}$. Nano-islet films with 6..10 nm effective thickness demonstrated the best electron emission performance. The obtained results witness for the two-temperature (or hot-electron) mechanism of cold electron emission.