{"title":"Electrically tunable bulk acoustic filters with induced piezoelectric effect in BSTO film","authors":"P. Turalchuk, I. Vendik, O. Vendik, J. Berge","doi":"10.1109/EUMC.2008.4751801","DOIUrl":"https://doi.org/10.1109/EUMC.2008.4751801","url":null,"abstract":"In this paper we discuss a potential realizability of a tunable bulk acoustic filter based on BSTO film for microwave applications. The estimation of characteristics of the tunable TFBAR was done by processing the experimental data obtained for the BSTO resonator using the model of the induced piezoelectric effect. The third-order tunable TFBAR filter was designed. The necessary set of the acoustic and electric parameters of the tunable ferroelectric based TFBAR was proclaimed. The 10% tunability of the TFBAR filter pass band was estimated by a simulation. The simulated characteristics were obtained taking into consideration a real structure of the BSTO based resonators (electrodes and acoustic mirror).","PeriodicalId":371257,"journal":{"name":"2008 European Conference on Wireless Technology","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127865308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Costrini, M. Calori, A. Cetronio, C. Lanzieri, S. Lavanga, M. Peroni, E. Limiti, A. Serino, G. Ghione, G. Melone
{"title":"A 20 watt micro-strip X-Band AlGaN/GaN HPA MMIC for advanced radar applications","authors":"C. Costrini, M. Calori, A. Cetronio, C. Lanzieri, S. Lavanga, M. Peroni, E. Limiti, A. Serino, G. Ghione, G. Melone","doi":"10.1109/eumc.2008.4751735","DOIUrl":"https://doi.org/10.1109/eumc.2008.4751735","url":null,"abstract":"In this paper a first iteration design, fabrication and test of a two-stage X-band MMIC HPA in micro-strip AlGaN/GaN technology is reported. With 20 V drain voltage operating bias point, at 3 dB compression point, the HPA delivers a pulsed output power ranging from 21 to 28.5 W, an associated gain from 12.9 to 16.5 dB and an associated PAE from circa 30% to 40%, over the 8-10.5 GHz frequency bandwidth. In the best performance frequency points (8.5 and 9 GHz) the HPA exhibits a saturated output power of 30 W with an associated PAE of 40%.","PeriodicalId":371257,"journal":{"name":"2008 European Conference on Wireless Technology","volume":"421 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121209077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Radiom, M. Baghaei-Nejad, G. Vandenbosch, H. Tenhunen, L. Zheng, G. Gielen
{"title":"Antenna miniaturization influence on the performance of impulse radio UWB system","authors":"S. Radiom, M. Baghaei-Nejad, G. Vandenbosch, H. Tenhunen, L. Zheng, G. Gielen","doi":"10.1109/EUMC.2008.4751823","DOIUrl":"https://doi.org/10.1109/EUMC.2008.4751823","url":null,"abstract":"In this paper the effect of antenna miniaturization in a UWB system is presented. Modified small-size printed tapered monopole antennas are designed in different scaling sizes. In order to evaluate the antennas performance and their functionality, the performance of three kinds of UWB systems, correlation detection, energy detection and transmitted reference UWB, is studied in the presence of each antenna in the AWGN channel. The simulation results show that our designed antenna and its miniaturized geometries are suitable for UWB applications.","PeriodicalId":371257,"journal":{"name":"2008 European Conference on Wireless Technology","volume":"417 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122787887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A 19.1-dBm fully-integrated 24 GHz power amplifier using 0.18-μm CMOS technology","authors":"Jing-Lin Kuo, Zuo‐Min Tsai, Huei Wang","doi":"10.1109/emicc.2008.4772353","DOIUrl":"https://doi.org/10.1109/emicc.2008.4772353","url":null,"abstract":"A 24 GHz, 19.1 dBm fully-integrated power amplifiers (PA) was designed and fabricated in the 0.18-mum deep n-well (DNW) CMOS technology. This power amplifier is a 2-stage design using cascode RF NMOS configuration and has a maximum measured output power of 19.1 dBm, an OP1dB of 13.3 dBm, a power added efficiency (PAE) of 15.6%, and a linear gain of 18.8 dB when VDD and DNW are both biased at 3.6 V. The chip size is only 0.56 times 0.58 mm2. To the authorpsilas knowledge, this PA demonstrates the highest output power of +19.1 dBm among the reported PAs above 15 GHz in CMOS processes.","PeriodicalId":371257,"journal":{"name":"2008 European Conference on Wireless Technology","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114607709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A 75 – 95 GHz wideband CMOS power amplifier","authors":"B. Wicks, E. Skafidas, R. Evans","doi":"10.1109/eumc.2008.4751732","DOIUrl":"https://doi.org/10.1109/eumc.2008.4751732","url":null,"abstract":"In this paper, a 75 - 95 GHz wideband power amplifier (PA) in 0.13-mum CMOS is implemented to explore the feasibility of low-cost CMOS technology for use in 71 - 76 GHz, 81 - 86 GHz and 92 - 95 GHz fixed point-to-point link bands and the 77-GHz vehicular radar band. The fully-integrated design incorporates the power amplifier, matching networks, and input and output transmission line networks on-chip. The designed amplifier achieves small signal gain of 6.0 dB at 77 GHz, a 3-dB bandwidth of 75 - 95 GHz and delivers a saturated output power of 8.1 dBm.","PeriodicalId":371257,"journal":{"name":"2008 European Conference on Wireless Technology","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116344074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}