Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498)最新文献

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A highly programmable sensor network interface with multiple sensor readout circuits 具有多个传感器读出电路的高度可编程传感器网络接口
Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498) Pub Date : 2003-10-22 DOI: 10.1109/ICSENS.2003.1279041
Jichun Zhang, Junwei Zhou, P. Balasundaram, A. Mason
{"title":"A highly programmable sensor network interface with multiple sensor readout circuits","authors":"Jichun Zhang, Junwei Zhou, P. Balasundaram, A. Mason","doi":"10.1109/ICSENS.2003.1279041","DOIUrl":"https://doi.org/10.1109/ICSENS.2003.1279041","url":null,"abstract":"This paper presents a Universal Micro-Sensor Interface (UMSI) chip that significantly expands the capability of previously reported generic interface circuits. It implements a new power-conservative network-capable sensor bus, integrates programmable readout circuits for multiple signal modes, and includes a standard interface for application-specific peripherals. Up to 255 UMSI chips can be connected in a microsystem and each UMSI can interface with up to 8 capacitive, resistive, and/or voltage output devices. Fabricated in 0.5 /spl mu/m CMOS process with a 2.22mm /spl times/ 2.22mm die size, the chip dissipates from 40 /spl mu/W to 13.5mW (depending on configuration) from a 3 V power supply. It supports several power management features and enables a new class of highly adaptive battery-powered microsystems capable of automatic reconfiguration in the field.","PeriodicalId":369277,"journal":{"name":"Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126725164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 31
Fabrication of thin film microheater for gas sensors on polyimide membrane 聚酰亚胺膜气体传感器用薄膜微加热器的研制
Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498) Pub Date : 2003-10-22 DOI: 10.1109/ICSENS.2003.1278964
M. Aslam, J. Hatfield
{"title":"Fabrication of thin film microheater for gas sensors on polyimide membrane","authors":"M. Aslam, J. Hatfield","doi":"10.1109/ICSENS.2003.1278964","DOIUrl":"https://doi.org/10.1109/ICSENS.2003.1278964","url":null,"abstract":"The work presented here describes the fabrication and characterisation of a microheater on a polyimide membrane for metal oxide (tin oxide) gas sensors. Four such heaters for an array of 4 sensors have been developed on a polyimide membrane of 3.5 /spl times/ 3.5mm/sup 2/ size. The sensing area for each sensor can be heated as high as 350 /spl deg/C. The polyimide membrane (PI) is fabricated on a bulk etched silicon <100> wafer. This type of membrane is more rugged than silicon dioxide or silicon nitride membranes currently being used as substrates for gas sensors. The main challenge in the fabrication of metal oxide gas sensors is low power consumption and high thermal uniformity of temperature (Dermane, 1988, Faglia et al., 1999 and Lee, 1996). The silicon frame surrounding the membrane is almost at ambient temperature, so when a heater array is operated, the thermal cross talk between sensors is minimised. In this paper, the design and fabrication of a microheater on a thermally isolated polyimide membrane is described.","PeriodicalId":369277,"journal":{"name":"Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126918177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Development of an electronic microtiterplate for high throughput screening (HTS) 高通量筛选(HTS)用电子微量滴定板的研制
Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498) Pub Date : 2003-10-22 DOI: 10.1109/ICSENS.2003.1279101
E. Spiller, T. Frommichen, A. Zimmermann, A. E. Sippel, G. Urban
{"title":"Development of an electronic microtiterplate for high throughput screening (HTS)","authors":"E. Spiller, T. Frommichen, A. Zimmermann, A. E. Sippel, G. Urban","doi":"10.1109/ICSENS.2003.1279101","DOIUrl":"https://doi.org/10.1109/ICSENS.2003.1279101","url":null,"abstract":"The presented sensor system introduces a novel \"electronic microtiterplate\" based on conductivity measurement for different biological species (e.g. yeast or bacteria cells). The incubation of the biological species takes place in the wells of the microtiterplates. In this paper a 10 well-system corresponding to the size of a standard 1536 well microtiterplate is described. Substances as drugs, ligands or antibiotics interact with biological target structures. This interaction lead to a change of cell numbers by choosing the right biological target systems or using genetically engineered cells. The change of biomass is measured differentially by impedance measurements using an electrode array on the bottom of the microtiter wells.","PeriodicalId":369277,"journal":{"name":"Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498)","volume":"195 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114247873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Fiber-optic thermometer using strontium aluminate based long afterglow phosphor 基于铝酸锶的长余辉荧光粉的光纤温度计
Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498) Pub Date : 2003-10-22 DOI: 10.1109/ICSENS.2003.1278903
H. Aizawa, E. Toba, T. Katsumata, S. Komuro, T. Morikawa
{"title":"Fiber-optic thermometer using strontium aluminate based long afterglow phosphor","authors":"H. Aizawa, E. Toba, T. Katsumata, S. Komuro, T. Morikawa","doi":"10.1109/ICSENS.2003.1278903","DOIUrl":"https://doi.org/10.1109/ICSENS.2003.1278903","url":null,"abstract":"The effect of trap level in the europium doped strontium aluminate (SrAl/sub 2/O/sub 3/:Eu/sup 2+/) phosphors have been evaluated for the fiber-optic thermometer application. Sensitivity and temperature range of the SrAl/sub 2/O/sub 3/:Eu/sup 2+/ phosphor sensor head vary strongly with the trap depth and the trap density of the phosphors. In the temperature ranging from 273 K to 353 K, SrAl/sub 2/O/sub 3/:Eu/sup 2+/ co-doped with Dy/sup 3+/ or Nd/sup 3+/, which have trap depth at around Et=0.5 eV, is powerful sensor material having large temperature coefficient.","PeriodicalId":369277,"journal":{"name":"Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498)","volume":"14 38","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114052502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation on cubic Zirconia-based pressure sensor for high temperature application 基于立方氧化锆的高温压力传感器研究
Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498) Pub Date : 2003-10-22 DOI: 10.1109/ICSENS.2003.1279032
W. Peng, B. Qi, G. Pickrell, A. Wang
{"title":"Investigation on cubic Zirconia-based pressure sensor for high temperature application","authors":"W. Peng, B. Qi, G. Pickrell, A. Wang","doi":"10.1109/ICSENS.2003.1279032","DOIUrl":"https://doi.org/10.1109/ICSENS.2003.1279032","url":null,"abstract":"Recent investigation of single crystal cubic zirconia fiber optic pressure sensor for high temperature environment application is reported in this paper. A fiber optic pressure sensor utilizing single crystal cubic zirconia as a structure material has been designed, developed and tested. The sensor head is a birefringence-based fiber optic sensor in which the will change with the pressure. The pressure response of the sensor has been measured from 0 to 1700Psi. Additional experimental results from room temperature to 1026 /spl deg/C show that cubic zirconia could be used for pressure sensor at high temperatures. Experiment results illustrate the feasibility to apply the designed single crystal cubic zirconia sensor for pressure measurement at high-temperature harsh industrial environments with further development.","PeriodicalId":369277,"journal":{"name":"Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121233849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Very high Q-factor in water achieved by monolithic, resonant cantilever sensor with fully integrated feedback 通过具有完全集成反馈的单片谐振悬臂式传感器,在水中实现了非常高的q因子
Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498) Pub Date : 2003-10-22 DOI: 10.1109/ICSENS.2003.1279055
Y. Li, C. Vancura, C. Hagleitner, J. Lichtenberg, O. Brand, H. Baltes
{"title":"Very high Q-factor in water achieved by monolithic, resonant cantilever sensor with fully integrated feedback","authors":"Y. Li, C. Vancura, C. Hagleitner, J. Lichtenberg, O. Brand, H. Baltes","doi":"10.1109/ICSENS.2003.1279055","DOIUrl":"https://doi.org/10.1109/ICSENS.2003.1279055","url":null,"abstract":"We present a novel, monolithic, mass-sensitive cantilever sensor for measurements in liquids, which achieves a high quality factor (Q-factor) by closed-loop actuation. The cantilever is the frequency-determining element in the feedback system, its resonance frequency being a function of the mass-change on the surface. While cantilever-based sensors generally suffer from low quality factors in liquids due to the strong damping, our device uses an internal feedback loop circuitry to enhance the Q-factor. This allows to increase Q-factor from 23 to 19,000 at a resonance frequency of 221 kHz. The cantilever is electromagnetically actuated by Lorentz force while the oscillation is detected by piezoresistive MOS-transistors. A fully differential feedback circuitry with amplitude control is integrated together with the cantilever on the same chip. Thanks to the high Q-factor and the resulting frequency stability, even small frequency (and mass) changes can be precisely measured by this fully integrated system. Therefore, active, external actuation or readout instrumentation, such as a laser for optical detection, is not required. The sensor is an excellent candidate for biosensing applications in liquids such as biomolecule hybridization and illustrates the advantage of integrated circuitry for resonant sensors.","PeriodicalId":369277,"journal":{"name":"Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498)","volume":"301 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121270466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 32
Ozone reactivity with carbon nanotubes: experimental and theoretical studies 臭氧与碳纳米管的反应性:实验与理论研究
Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498) Pub Date : 2003-10-22 DOI: 10.1109/ICSENS.2003.1278975
S. Picozz, L. Lozz, S. Santucci, C. Cantalini, C. Baratto, G. Sberveglieri, I. Armentano, J. Kenny, L. Valenti, B. Delley
{"title":"Ozone reactivity with carbon nanotubes: experimental and theoretical studies","authors":"S. Picozz, L. Lozz, S. Santucci, C. Cantalini, C. Baratto, G. Sberveglieri, I. Armentano, J. Kenny, L. Valenti, B. Delley","doi":"10.1109/ICSENS.2003.1278975","DOIUrl":"https://doi.org/10.1109/ICSENS.2003.1278975","url":null,"abstract":"Carbon nanotubes (CNTs) thin films have been investigated as new O/sub 3/ gas sensors in the concentration range 75 - 200 ppb. 150 nm thick CNTs thin films, have been prepared by rf-PECVD on Si/Si/sub 3/N/sub 4/ substrates, provided with Pt interdigital electrodes, and post-annealed under controlled conditions. The electrical response to O/sub 3/ has been investigated at different operating temperatures starting from the room temperature. Sensitivity response analysis has demonstrated that CNTs are responsive to O/sub 3/ with a decrease of the baseline resistance similar to that observed for NO/sub 3/. In order to obtain a theoretical validation of the experimental results, the equilibrium position, charge transfer and density of states have been calculated from first principles for the CNT+O/sub 3/ system.","PeriodicalId":369277,"journal":{"name":"Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134481020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Development of micromachined nanocrystalline mesoporous SnO/sub 2/ gas sensor for electronic nose 电子鼻用微机械纳米晶介孔SnO/ sub2 /气体传感器的研制
Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498) Pub Date : 2003-10-22 DOI: 10.1109/ICSENS.2003.1278911
Jianwei Gong, Weifeng Fei, Zheng Xia, Quanfang Chen, S. Seal, L. Chow
{"title":"Development of micromachined nanocrystalline mesoporous SnO/sub 2/ gas sensor for electronic nose","authors":"Jianwei Gong, Weifeng Fei, Zheng Xia, Quanfang Chen, S. Seal, L. Chow","doi":"10.1109/ICSENS.2003.1278911","DOIUrl":"https://doi.org/10.1109/ICSENS.2003.1278911","url":null,"abstract":"MEMS based sol gel synthesized mesoporous nanocrystalline SnO/sub 2/ gas sensor has been developed. The SnO/sub 2/ nano film is fabricated with the combination of polymeric sol gel chemistry with block copolymers used as structure directing agents. The novel hydrogen sensor has a fast response time (1s) and quick recovery time (3s), as well as good sensitivity (up to 90), comparing to other hydrogen sensors developed. The working temperature of the new sensor can be reduced as low as 100/spl deg/C. The low working temperature poses advantages such as lower power consumption; lower thermal induced signal shift as well as safe detection in certain environments where temperature is strictly limited. The developed sensor cell will be used to develop a high sensitivity and high selectivity electronic nose for harmful gas detection by combining different catalysts doped SnO/sub 2/ gas sensor array with fuzzy neural network.","PeriodicalId":369277,"journal":{"name":"Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134487051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Bearingless in-line viscometer for the semiconductor industry 用于半导体工业的无轴承在线粘度计
Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498) Pub Date : 2003-10-22 DOI: 10.1109/ICSENS.2003.1279109
S. Huwyler, D. Schrag, R. Gilbert, T. Thorsen, R. Schob, J. Hahn
{"title":"Bearingless in-line viscometer for the semiconductor industry","authors":"S. Huwyler, D. Schrag, R. Gilbert, T. Thorsen, R. Schob, J. Hahn","doi":"10.1109/ICSENS.2003.1279109","DOIUrl":"https://doi.org/10.1109/ICSENS.2003.1279109","url":null,"abstract":"A rotational in-line-viscometer without mechanical bearings and seals is described; all wetted surfaces are made of PTFE or PFA. This arrangement is suitable for the ultra-cleanliness requirements of the semiconductor industry. A cylindrical slice rotor is magnetically levitated and driven without mechanical contact with the stator of the viscometer. The rotor is surrounded by the test fluid. If the rotor is driven at a constant rotation speed, the fluid is sheared in a measurement gap between the rotor and the casing, and a torque is applied to the rotor. This torque correlates with the viscosity of the fluid. Since there is no friction from bearings and seals, this torque can be calculated directly from the motor current. The levitation of the rotor in the sample fluid is realized by a combination of active and passive magnetic bearings, based on the technology of the Bearingless Slice Motor, making the whole system very compact.","PeriodicalId":369277,"journal":{"name":"Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133822172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Combined differential and relative pressure sensor based on a double-bridge structure 基于双桥结构的组合式差压和相对压力传感器
Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498) Pub Date : 2003-10-22 DOI: 10.1109/ICSENS.2003.1279029
C. Pedersen, J. Krog, C. Christensen, S. T. Jespersen, E. Thomsen
{"title":"Combined differential and relative pressure sensor based on a double-bridge structure","authors":"C. Pedersen, J. Krog, C. Christensen, S. T. Jespersen, E. Thomsen","doi":"10.1109/ICSENS.2003.1279029","DOIUrl":"https://doi.org/10.1109/ICSENS.2003.1279029","url":null,"abstract":"A combined differential and relative MEMS pressure sensor based on a double piezoresistive Wheatstone bridge structure is presented. The developed sensor has a conventional (inner) bridge on a micro machined membrane and a secondary (outer) bridge on the chip substrate. The double-bridge structure has previously been used e.g. in the compensation of temperature-induced errors in MEMS pressure sensors as stated in M. Akbar and M. A. Shanblatt (1992), J. J. Dziuban et al. (1994) and Young-Tae Lee and Hee-Don Seo (1995). An approach is demonstrated for a combined measurement of sensor output from inner and outer bridge, leading to the deduction of both differential and relative media pressure (with respect to atm. pressure), and a significant improvement in differential pressure sensor accuracy. Output from both bridges depends linearly on both differential and absolute media pressure. Furthermore, the sensor stress distributions involved are studied and supported by extensive 3D FEM stress analysis.","PeriodicalId":369277,"journal":{"name":"Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115604267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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